The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Roman Sobolewski sits on this spectrum.
This scientist: 362 publications — 69th percentile
69% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 1,065 publications or more.
The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Roman Sobolewski sits on this spectrum.
This scientist: 40 D-Index — 36th percentile
36% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 111 D-Index or more.
Roman Sobolewski is affiliated with the University of Rochester in the United States and has a research portfolio spanning physics, engineering, and materials science. The focus of their work encompasses a range of subfields including atomic and molecular physics, optics, electrical and electronic engineering, materials chemistry, radiation studies, and spectroscopy.
Their research addresses topics such as terahertz technology and applications, magnetic properties of thin films, quantum and electron transport phenomena, gyrotron and vacuum electronics research, semiconductor quantum structures and devices, photonic and optical devices, and advanced X-ray imaging techniques.
Roman Sobolewski has published extensively in journals with frequent contributions to the following venues:
Representative recent papers include:
Frequent collaborators in Sobolewski's research include:
Their work integrates experimental and theoretical approaches across advanced spectroscopy, terahertz imaging and sensing, and the study of magnetic and electronic phenomena in thin films and nanomaterials.
G. N. Gol’tsman;O. Okunev;G. Chulkova;A. Lipatov
A. Verevkin;J. Zhang;Roman Sobolewski;A. Lipatov
Alexei D Semenov;Gregory N Gol'tsman;Gregory N Gol'tsman;Roman Sobolewski;Roman Sobolewski
K.S. Il'in;Martin Lindgren;M Currie;A.D. Semenov
A. Korneev;P. Kouminov;V. Matvienko;G. Chulkova
R.D. Shannon;R.A. Oswald;J.B. Parise;B.H.T. Chai
G.N. Gol'tsman;K. Smirnov;P. Kouminov;B. Voronov
G. Gol'tsman;O. Minaeva;A. Korneev;M. Tarkhov
R. Sobolewski;A. Verevkin;G.N. Gol'tsman;A. Lipatov
G. Gol'tsman;O. Okunev;G. Chulkova;A. Lipatov
A. Verevkin;A. Pearlman;W. Slysz;J. Zhang
J.F. Whitaker;R. Sobolewski;D.R. Dykaar;T.Y. Hsiang
W. R. Donaldson;A. M. Kadin;P. H. Ballentine;R. Sobolewski
F. A. Hegmann;D. Jacobs‐Perkins;C.‐C. Wang;S. H. Moffat
J. Zhang;N. Boiadjieva;G. Chulkova;H. Deslandes
Douglas R. Dykaar;Roman Sobolewski;James M. Chwalek;John F. Whitaker
P. C. Shan;Z. Çelik‐Butler;D. P. Butler;A. Jahanzeb
Seema Somani;Steven Kasapi;Kenneth Wilsher;William Lo
A. Korneev;V. Matvienko;O. Minaeva;I. Milostnaya
J. Kitaygorsky;I. Komissarov;A. Jukna;D. Pan
Jin Zhang;W. Slysz;A. Verevkin;O. Okunev
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