V. Ferlet-Cavrois

Best Publications

• Radiation effects in SOI technologies

  J.R. Schwank;V. Ferlet-Cavrois;M.R. Shaneyfelt;P. Paillet

  555
  Citations

• Single Event Transients in Digital CMOS—A Review

  V. Ferlet-Cavrois;L. W. Massengill;P. Gouker

  445
  Citations

• Statistical Analysis of the Charge Collected in SOI and Bulk Devices Under Heavy lon and Proton Irradiation—Implications for Digital SETs

  V. Ferlet-Cavrois;P. Paillet;M. Gaillardin;D. Lambert

  195
  Citations

• Worst-case bias during total dose irradiation of SOI transistors

  V. Ferlet-Cavrois;T. Colladant;P. Paillet;J.L. Leray

  176
  Citations

• New Insights Into Single Event Transient Propagation in Chains of Inverters—Evidence for Propagation-Induced Pulse Broadening

  V. Ferlet-Cavrois;P. Paillet;D. McMorrow;N. Fel

  173
  Citations

• Impact of Heavy Ion Energy and Nuclear Interactions on Single-Event Upset and Latchup in Integrated Circuits

  P.E. Dodd;J.R. Schwank;M.R. Shaneyfelt;J.A. Felix

  150
  Citations

• Direct measurement of transient pulses induced by laser and heavy ion irradiation in deca-nanometer devices

  V. Ferlet-Cavrois;P. Paillet;D. McMorrow;A. Torres

  143
  Citations

• Comparison of charge yield in MOS devices for different radiation sources

  P. Paillet;J.R. Schwank;M.R. Shaneyfelt;V. Ferlet-Cavrois

  143
  Citations

• Effects of particle energy on proton-induced single-event latchup

  J.R. Schwank;M.R. Shaneyfelt;J. Baggio;P.E. Dodd

  139
  Citations

• Insights on the transient response of fully and partially depleted SOI technologies under heavy-ion and dose-rate irradiations

  V. Ferlet-Cavrois;G. Gasiot;C. Marcandella;C. D'Hose

  121
  Citations

• Proton- and Gamma-Induced Effects on Erbium-Doped Optical Fibers

  S. Girard;B. Tortech;E. Regnier;M. Van Uffelen

  116
  Citations

• Radiation Effects on Ytterbium- and Ytterbium/Erbium-Doped Double-Clad Optical Fibers

  S. Girard;Y. Ouerdane;B. Tortech;C. Marcandella

  96
  Citations

• Correlation between Co-60 and X-ray radiation-induced charge buildup in silicon-on-insulator buried oxides

  J.R. Schwank;M.R. Shaneyfelt;P.E. Dodd;V. Ferlet-Cavrois

  93
  Citations

• Two-dimensional simulation of total dose effects on NMOSFET with lateral parasitic transistor

  Unknown

  92
  Citations

• A New Approach for SOI Devices Small-Signal Parameters Extraction

  Unknown

  89
  Citations

• Effects of Total Dose Irradiation on Single-Event Upset Hardness

  J.R. Schwank;M.R. Shaneyfelt;J.A. Felix;P.E. Dodd

  77
  Citations

• Laser probing of bipolar amplification in 0.25-/spl mu/m MOS/SOI transistors

  O. Musseau;V. Ferlet-Cavrois;J.L. Pelloie;S. Buchner

  74
  Citations

• Characterization of the parasitic bipolar amplification in SOI technologies submitted to transient irradiation

  V. Ferlet-Cavrois;C. Marcandella;G. Giraud;G. Gasiot

  72
  Citations

• Comparison of single event transients generated at four pulsed-laser test facilities - NRL, IMS, EADS, JPL

  S. Buchner;N. Roche;J. Warner;D. McMorrow

  69
  Citations

• Optimum laboratory radiation source for hardness assurance testing

  J.R. Schwank;M.R. Shaneyfelt;P. Paillet;D.E. Beutler

  67
  Citations