V. Ferlet-Cavrois

V. Ferlet-Cavrois publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where V. Ferlet-Cavrois sits on this spectrum.

V. Ferlet-Cavrois D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where V. Ferlet-Cavrois sits on this spectrum.

Best Publications

• Radiation effects in SOI technologies

  J.R. Schwank;V. Ferlet-Cavrois;M.R. Shaneyfelt;P. Paillet

  555
  Citations

• Single Event Transients in Digital CMOS—A Review

  V. Ferlet-Cavrois;L. W. Massengill;P. Gouker

  445
  Citations

• Statistical Analysis of the Charge Collected in SOI and Bulk Devices Under Heavy lon and Proton Irradiation—Implications for Digital SETs

  V. Ferlet-Cavrois;P. Paillet;M. Gaillardin;D. Lambert

  195
  Citations

• Worst-case bias during total dose irradiation of SOI transistors

  V. Ferlet-Cavrois;T. Colladant;P. Paillet;J.L. Leray

  176
  Citations

• New Insights Into Single Event Transient Propagation in Chains of Inverters—Evidence for Propagation-Induced Pulse Broadening

  V. Ferlet-Cavrois;P. Paillet;D. McMorrow;N. Fel

  173
  Citations

• Impact of Heavy Ion Energy and Nuclear Interactions on Single-Event Upset and Latchup in Integrated Circuits

  P.E. Dodd;J.R. Schwank;M.R. Shaneyfelt;J.A. Felix

  150
  Citations

• Direct measurement of transient pulses induced by laser and heavy ion irradiation in deca-nanometer devices

  V. Ferlet-Cavrois;P. Paillet;D. McMorrow;A. Torres

  143
  Citations

• Comparison of charge yield in MOS devices for different radiation sources

  P. Paillet;J.R. Schwank;M.R. Shaneyfelt;V. Ferlet-Cavrois

  143
  Citations

• Effects of particle energy on proton-induced single-event latchup

  J.R. Schwank;M.R. Shaneyfelt;J. Baggio;P.E. Dodd

  139
  Citations

• Insights on the transient response of fully and partially depleted SOI technologies under heavy-ion and dose-rate irradiations

  V. Ferlet-Cavrois;G. Gasiot;C. Marcandella;C. D'Hose

  121
  Citations

• Proton- and Gamma-Induced Effects on Erbium-Doped Optical Fibers

  S. Girard;B. Tortech;E. Regnier;M. Van Uffelen

  116
  Citations

• Radiation Effects on Ytterbium- and Ytterbium/Erbium-Doped Double-Clad Optical Fibers

  S. Girard;Y. Ouerdane;B. Tortech;C. Marcandella

  96
  Citations

• Correlation between Co-60 and X-ray radiation-induced charge buildup in silicon-on-insulator buried oxides

  J.R. Schwank;M.R. Shaneyfelt;P.E. Dodd;V. Ferlet-Cavrois

  93
  Citations

• Two-dimensional simulation of total dose effects on NMOSFET with lateral parasitic transistor

  Unknown

  92
  Citations

• A New Approach for SOI Devices Small-Signal Parameters Extraction

  Unknown

  89
  Citations

• Effects of Total Dose Irradiation on Single-Event Upset Hardness

  J.R. Schwank;M.R. Shaneyfelt;J.A. Felix;P.E. Dodd

  77
  Citations

• Laser probing of bipolar amplification in 0.25-/spl mu/m MOS/SOI transistors

  O. Musseau;V. Ferlet-Cavrois;J.L. Pelloie;S. Buchner

  74
  Citations

• Characterization of the parasitic bipolar amplification in SOI technologies submitted to transient irradiation

  V. Ferlet-Cavrois;C. Marcandella;G. Giraud;G. Gasiot

  72
  Citations

• Comparison of single event transients generated at four pulsed-laser test facilities - NRL, IMS, EADS, JPL

  S. Buchner;N. Roche;J. Warner;D. McMorrow

  69
  Citations

• Optimum laboratory radiation source for hardness assurance testing

  J.R. Schwank;M.R. Shaneyfelt;P. Paillet;D.E. Beutler

  67
  Citations