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D-Index & Metrics

Materials Science

D-Index
57
Citations
10942
World Ranking
7995
National Ranking
36

Rafi Kalish publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Rafi Kalish sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 300 publications — 60th percentile

60% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Rafi Kalish D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Rafi Kalish sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 57 D-Index — 39th percentile

39% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Rafi Kalish is affiliated with the Technion - Israel Institute of Technology in Israel. Their research spans several fields including Engineering and Materials Science, with a focus on subfields such as Electrical and Electronic Engineering, Materials Chemistry, and Mechanics of Materials.

The main topics of Kalish's work involve Diamond and Carbon-based Materials Research, Semiconductor materials and devices, Metal and Thin Film Mechanics, and Advancements in Semiconductor Devices and Circuit Design.

Their recent publications include:

  • "Refractory W Ohmic Contacts to H-Terminated Diamond", 2020, IEEE Transactions on Electron Devices
  • "WO3 Passivation of Access Regions in Diamond MOSFETs", 2022, IEEE Transactions on Electron Devices

Frequent co-authors collaborating with Kalish are:

  • Alon Vardi
  • Moshe Tordjman
  • Jesús A. del Alamo

Kalish's work has predominantly been published in the IEEE Transactions on Electron Devices.

Best Publications

  • Systematic variation of the Raman spectra of DLC films as a function of sp2:sp3 composition

    S. Prawer;K.W. Nugent;Y. Lifshitz;G.D. Lempert

  • Damage threshold for ion‐beam induced graphitization of diamond

    C. Uzan‐Saguy;C. Cytermann;R. Brener;V. Richter

  • Thermal stability and relaxation in diamond-like-carbon. A Raman study of films with different sp3 fractions (ta-C to a-C)

    R. Kalish;Y. Lifshitz;K. Nugent;S. Prawer

  • A new surface electron-emission mechanism in diamond cathodes

    M. W. Geis;N. N. Efremow;K. E. Krohn;J. C. Twichell

  • Growth mechanisms of DLC films from C+ ions: experimental studies

    Y. Lifshitz;G.D. Lempert;E. Grossman;I. Avigal

  • Doping of diamond

    R. Kalish

  • Properties of nitrogen‐doped amorphous hydrogenated carbon films

    O. Amir;R. Kalish

  • Electrochemical behavior of boron-doped diamond electrodes

    N. Vinokur;B. Miller;Y. Avyigal;R. Kalish

  • Free-standing single crystal silicon nanoribbons.

    Wensheng Shi;Hongying Peng;Ning Wang;Chi Pui Li

  • Ion-beam-induced transformation of diamond

    S. Prawer;R. Kalish

  • Growth and characterization of phosphorus doped n-type diamond thin films

    S. Koizumi;M. Kamo;Y. Sato;S. Mita

  • Ion-beam-induced hydrogen release from a-C:H: A bulk molecular recombination model

    M. E. Adel;O. Amir;R. Kalish;Leonard C Feldman

  • Shallow donors with high n-type electrical conductivity in homoepitaxial deuterated boron-doped diamond layers

    Zéphirin Teukam;Jacques Chevallier;Cécile Saguy;Rafi Kalish

  • Increasing the coherence time of single electron spins in diamond by high temperature annealing

    Boris Naydenov;Friedemann Reinhard;Anke Lämmle;V. Richter

  • The search for donors in diamond

    R. Kalish

  • Is sulfur a donor in diamond

    R. Kalish;A. Reznik;C. Uzan-Saguy;C. Cytermann

  • The nature of damage in ion-implanted and annealed diamond

    R. Kalish;A. Reznik;K.W. Nugent;S. Prawer

  • ELECTRODES OF NITROGEN-INCORPORATED TETRAHEDRAL AMORPHOUS CARBON A NOVEL THIN-FILM ELECTROCATALYTIC MATERIAL WITH DIAMOND-LIKE STABILITY

    Kwangsun Yoo;Barry Miller;Rafi Kalish;Xu Shi

  • Efficient Reduction of Nitrite and Nitrate to Ammonia Using Thin-Film B-Doped Diamond Electrodes

    C. Reuben;E. Galun;H. Cohen;R. Tenne

  • Growth of aligned carbon nanotubes by biasing during growth

    Y. Avigal;R. Kalish

  • Ion implantation in tetrahedral amorphous carbon

    D. G. McCulloch;E. G. Gerstner;D. R. McKenzie;S. Prawer

Frequent Co-Authors

Steven Prawer
Steven Prawer University of Melbourne
David N. Jamieson
David N. Jamieson University of Melbourne
James E. Butler
James E. Butler Euclid TechLabs, LLC
Yeshayahu Lifshitz
Yeshayahu Lifshitz Technion – Israel Institute of Technology
Leonard C. Feldman
Leonard C. Feldman Rutgers, The State University of New Jersey
Dougal G. McCulloch
Dougal G. McCulloch RMIT University
Alex Zunger
Alex Zunger University of Colorado Boulder
David R. McKenzie
David R. McKenzie University of Sydney
Reshef Tenne
Reshef Tenne Weizmann Institute of Science
Claude Lévy-Clément
Claude Lévy-Clément Centre national de la recherche scientifique, CNRS

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