The scientist’s investigation covers issues in Diamond, Analytical chemistry, Ion implantation, Annealing and Ion. Rafi Kalish is interested in Material properties of diamond, which is a branch of Diamond. The concepts of his Analytical chemistry study are interwoven with issues in Carbon film and Substrate.
His Ion implantation study combines topics from a wide range of disciplines, such as Electron mobility, Spins and Impurity. His work deals with themes such as Raman spectroscopy and Arsenic, which intersect with Annealing. Rafi Kalish combines subjects such as Inorganic chemistry and Semiconductor with his study of Doping.
His primary areas of study are Diamond, Analytical chemistry, Ion implantation, Ion and Annealing. The concepts of his Diamond study are interwoven with issues in Optoelectronics, Chemical vapor deposition, Doping and Atomic physics. His research in Analytical chemistry focuses on subjects like Amorphous solid, which are connected to Carbon.
His Ion implantation research includes themes of Electron mobility, Inorganic chemistry, Crystallographic defect, Graphite and Photoluminescence. The various areas that Rafi Kalish examines in his Ion study include Radiochemistry and Molecular physics. His Annealing research is multidisciplinary, relying on both Crystallography, Pulsed laser and Activation energy.
Diamond, Optoelectronics, Ion implantation, Nanotechnology and Photonic crystal are his primary areas of study. His research in Diamond is mostly focused on Material properties of diamond. In general Optoelectronics, his work in Doping, Plasmon and Photoluminescence is often linked to Antenna linking many areas of study.
His biological study spans a wide range of topics, including Spins and Analytical chemistry. His Nanotechnology research integrates issues from Graphite, Carbon, Amorphous carbon and Nanodiamond. His work in Annealing addresses issues such as Nitrogen, which are connected to fields such as Crystal growth and Nitrogen-vacancy center.
Rafi Kalish mainly focuses on Diamond, Optoelectronics, Ion implantation, Material properties of diamond and Photonic crystal. His studies deal with areas such as Photonics, Microscope, Confocal and Nanodevice as well as Diamond. Rafi Kalish focuses mostly in the field of Optoelectronics, narrowing it down to matters related to Nanotechnology and, in some cases, Non-contact atomic force microscopy, Amorphous carbon and Kelvin probe force microscope.
His Ion implantation study incorporates themes from Annealing, Spins, Atomic physics, Analytical chemistry and Isotropic etching. Annealing is frequently linked to Graphite in his study. His Material properties of diamond research is classified as research in Chemical vapor deposition.
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Systematic variation of the Raman spectra of DLC films as a function of sp2:sp3 composition
S. Prawer;K.W. Nugent;Y. Lifshitz;G.D. Lempert.
Diamond and Related Materials (1996)
Damage threshold for ion‐beam induced graphitization of diamond
C. Uzan‐Saguy;C. Cytermann;R. Brener;V. Richter.
Applied Physics Letters (1995)
Thermal stability and relaxation in diamond-like-carbon. A Raman study of films with different sp3 fractions (ta-C to a-C)
R. Kalish;Y. Lifshitz;K. Nugent;S. Prawer.
Applied Physics Letters (1999)
Growth mechanisms of DLC films from C+ ions: experimental studies
Y. Lifshitz;G.D. Lempert;E. Grossman;I. Avigal.
Diamond and Related Materials (1995)
Electrochemical behavior of boron-doped diamond electrodes
N. Vinokur;B. Miller;Y. Avyigal;R. Kalish.
Journal of The Electrochemical Society (1996)
Properties of nitrogen‐doped amorphous hydrogenated carbon films
O. Amir;R. Kalish.
Journal of Applied Physics (1991)
Free-standing single crystal silicon nanoribbons.
Wensheng Shi;Hongying Peng;Ning Wang;Chi Pui Li.
Journal of the American Chemical Society (2001)
Ion-beam-induced transformation of diamond
S. Prawer;R. Kalish.
Physical Review B (1995)
Doping of diamond
Ion-beam-induced hydrogen release from a-C:H: A bulk molecular recombination model
M. E. Adel;O. Amir;R. Kalish;Leonard C Feldman.
Journal of Applied Physics (1989)
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