World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
59
Citations
10375
World Ranking
7496
National Ranking
2183

Lin Gan publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Lin Gan sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 106 publications — 4th percentile

4% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Lin Gan D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Lin Gan sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 59 D-Index — 44th percentile

44% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Lin Gan is a researcher affiliated with Huazhong University of Science and Technology in China, engaged primarily in the fields of Engineering and Materials Science. Their work spans diverse subfields including Materials Chemistry, Electrical and Electronic Engineering, Biomedical Engineering, Biomaterials, and Artificial Intelligence.

The research topics Lin Gan focuses on include:

  • 2D Materials and Applications
  • Advanced Cellulose Research Studies
  • MXene and MAX Phase Materials
  • Advanced Memory and Neural Computing
  • Advancements in Battery Materials
  • Advanced Battery Technologies Research
  • Quantum Dots Synthesis And Properties

Lin Gan's recent publications illustrate a focus on nanomaterials, energy storage, and neural computing. Selected papers include:

  • "Hierarchical Self-Assembly of Nanowires on the Surface by Metallo-Supramolecular Truncated Cuboctahedra" (2021) in Journal of the American Chemical Society
  • "Strain-sensitive ferromagnetic two-dimensional Cr2Te3" (2021) in Nano Research
  • "Wrapping Sb2Te3 with a Graphite Layer toward High Volumetric Energy and Long Cycle Li-Ion Batteries" (2020) in ACS Applied Materials & Interfaces
  • "Enhancement of MoTe2 near-infrared absorption with gold hollow nanorods for photodetection" (2020) in Nano Research
  • "Memristor-based spiking neural networks: cooperative development of neural network architecture/algorithms and memristors" (2024) in Chip

Frequent coauthors collaborating with Lin Gan include Tianyou Zhai, Huiqiao Li, Renyan Wang, Xiang Xu, and Meng Ran.

The researcher has published multiple articles in venues such as Nano Research, Carbohydrate Polymers, and the Conference on Lasers and Electro-Optics, alongside contributions to journals like the Journal of the American Chemical Society and Chip.

Best Publications

  • Ultrathin SnSe2 Flakes Grown by Chemical Vapor Deposition for High‐Performance Photodetectors

    Xing Zhou;Lin Gan;Wenming Tian;Qi Zhang

  • Two-dimensional layered nanomaterials for gas-sensing applications

    Wei Yang;Lin Gan;Huiqiao Li;Tianyou Zhai

  • Large‐Size Growth of Ultrathin SnS2 Nanosheets and High Performance for Phototransistors

    Xing Zhou;Qi Zhang;Lin Gan;Huiqiao Li

  • Photonic Potentiation and Electric Habituation in Ultrathin Memristive Synapses Based on Monolayer MoS2.

    Hui-Kai He;Rui Yang;Wen Zhou;He-Ming Huang

  • Turning off hydrogen to realize seeded growth of subcentimeter single-crystal graphene grains on copper.

    Lin Gan;Zhengtang Luo

  • Controlled Synthesis of Ultrathin 2D β-In2S3 with Broadband Photoresponse by Chemical Vapor Deposition

    Wenjuan Huang;Lin Gan;Haotian Yang;Nan Zhou

  • Chemical Vapor Deposition Synthesis of Ultrathin Hexagonal ReSe2 Flakes for Anisotropic Raman Property and Optoelectronic Application

    Muhammad Hafeez;Lin Gan;Huiqiao Li;Ying Ma

  • Large-Area Bilayer ReS2 Film/Multilayer ReS2 Flakes Synthesized by Chemical Vapor Deposition for High Performance Photodetectors

    Muhammad Hafeez;Lin Gan;Huiqiao Li;Ying Ma

  • Layered phosphorus-like GeP5: a promising anode candidate with high initial coulombic efficiency and large capacity for lithium ion batteries

    Wenwu Li;Huiqiao Li;Zhijuan Lu;Lin Gan

  • Vertical heterostructures based on SnSe2/MoS2 for high performance photodetectors

    Xing Zhou;Nan Zhou;Chao Li;Hongyue Song

  • Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

    Xing Zhou;Qi Zhang;Lin Gan;Huiqiao Li

  • Van der Waals Coupled Organic Molecules with Monolayer MoS2 for Fast Response Photodetectors with Gate-Tunable Responsivity.

    Yu Huang;Fuwei Zhuge;Junxian Hou;Liang Lv

  • Building High‐Throughput Molecular Junctions Using Indented Graphene Point Contacts

    Yang Cao;Shaohua Dong;Song Liu;Li He

  • 2D layered group IIIA metal chalcogenides: synthesis, properties and applications in electronics and optoelectronics

    Wenjuan Huang;Lin Gan;Huiqiao Li;Ying Ma

  • Understanding charge transfer at PbS-decorated graphene surfaces toward a tunable photosensor.

    Dayong Zhang;Lin Gan;Yang Cao;Qing Wang

  • An Enhanced UV-Vis-NIR an d Flexible Photodetector Based on Electrospun ZnO Nanowire Array/PbS Quantum Dots Film Heterostructure.

    Zhi Zheng;Lin Gan;Jianbing Zhang;Fuwei Zhuge

  • A Fully Transparent and Flexible Ultraviolet–Visible Photodetector Based on Controlled Electrospun ZnO-CdO Heterojunction Nanofiber Arrays

    Zhi Zheng;Lin Gan;Huiqiao Li;Ying Ma

  • Direct Optical Characterization of Graphene Growth and Domains on Growth Substrates

    Chuancheng Jia;Jiaolong Jiang;Lin Gan;Xuefeng Guo

  • High-Performance Solar-Blind Deep Ultraviolet Photodetector Based on Individual Single-Crystalline Zn2GeO4Nanowire

    Xing Zhou;Qi Zhang;Lin Gan;Xin Li

  • Decorating Perovskite Quantum Dots in TiO2 Nanotubes Array for Broadband Response Photodetector

    Zhi Zheng;Fuwei Zhuge;Yaguang Wang;Jianbing Zhang

  • Direct Optical Characterization of Graphene Growth and Domains on

    Chuancheng Jia;Jiaolong Jiang;Lin Gan;Xuefeng Guo

Frequent Co-Authors

Tianyou Zhai
Tianyou Zhai Huazhong University of Science and Technology
Huiqiao Li
Huiqiao Li Huazhong University of Science and Technology
Xuefeng Guo
Xuefeng Guo Peking University
Ying Ma
Ying Ma University of Houston
Zhengtang Luo
Zhengtang Luo Hong Kong University of Science and Technology
Dmitri Golberg
Dmitri Golberg Queensland University of Technology
Zhenxing Wang
Zhenxing Wang National Center for Nanoscience and Technology, China
Lun Dai
Lun Dai Peking University
Zhongfan Liu
Zhongfan Liu Peking University
Yoshio Bando
Yoshio Bando University of Wollongong

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