World's Best Scientists 2026 revealed!
Dae Hwan Kim

Dae Hwan Kim

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
42
Citations
7644
World Ranking
4088
National Ranking
137

Dae Hwan Kim publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Dae Hwan Kim sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 378 publications — 71st percentile

71% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Dae Hwan Kim D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Dae Hwan Kim sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 42 D-Index — 42nd percentile

42% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Best Publications

  • High performance amorphous oxide thin film transistors with self-aligned top-gate structure

    Jae Chul Park;Sang Wook Kim;Sun Il Kim;Huaxiang Yin

  • Extraction of Subgap Density of States in Amorphous InGaZnO Thin-Film Transistors by Using Multifrequency Capacitance–Voltage Characteristics

    Sangwon Lee;Sungwook Park;Sungchul Kim;Yongwoo Jeon

  • Highly Stable Transparent Amorphous Oxide Semiconductor Thin‐Film Transistors Having Double‐Stacked Active Layers

    Jae Chul Park;Sangwook Kim;Sunil Kim;Changjung Kim

  • Effect of channel thickness on density of states in amorphous InGaZnO thin film transistor

    Sang Yeol Lee;Do Hyung Kim;Eugene Chong;Yong Woo Jeon

  • Transparent, Flexible Strain Sensor Based on a Solution-Processed Carbon Nanotube Network.

    Jieun Lee;Meehyun Lim;Jinsu Yoon;Min Seong Kim

  • Modeling of amorphous InGaZnO thin-film transistors based on the density of states extracted from the optical response of capacitance-voltage characteristics

    Kichan Jeon;Changjung Kim;Ihun Song;Jaechul Park

  • Instability of amorphous oxide semiconductors via carrier-mediated structural transition between disorder and peroxide state

    Ho-Hyun Nahm;Yong-Sung Kim;Dae Hwan Kim

  • Study on the Photoresponse of Amorphous In–Ga–Zn–O and Zinc Oxynitride Semiconductor Devices by the Extraction of Sub-Gap-State Distribution and Device Simulation

    Jun Tae Jang;Jozeph Park;Byung Du Ahn;Dong Myong Kim

  • ZnO composite nanolayer with mobility edge quantization for multi-value logic transistors

    Lynn Lee;Jeongwoon Hwang;Jeongwoon Hwang;Jin Won Jung;Jongchan Kim

  • Cation composition effects on electronic structures of In-Sn-Zn-O amorphous semiconductors

    Unknown

  • Subgap Density-of-States-Based Amorphous Oxide Thin Film Transistor Simulator (DeAOTS)

    Yong Woo Jeon;Sungchul Kim;Sangwon Lee;Dong Myong Kim

  • Amorphous InGaZnO Thin-Film Transistors—Part I: Complete Extraction of Density of States Over the Full Subband-Gap Energy Range

    Yongsik Kim;Minkyung Bae;Woojoon Kim;Dongsik Kong

  • Nanoscale Multi-Line Patterning Using Sidewall Structure

    Kyung-Hoon Chung;Suk-Kang Sung;Dae Hwan Kim;Woo Young Choi

  • Simulation study on discrete charge effects of SiNW biosensors according to bound target position using a 3D TCAD simulator

    In-Young Chung;Hyeri Jang;Jieun Lee;Hyunggeun Moon

  • Density of states of amorphous In-Ga-Zn-O from electrical and optical characterization

    Eric Kai Hsiang Yu;Sungwoo Jun;Dae Hwan Kim;Jerzy Kanicki

  • Density of states-based design of metal oxide thin-film transistors for high mobility and superior photostability.

    Hyun-Suk Kim;Joon Seok Park;Hyun-Kwang Jeong;Kyoung Seok Son

  • Impact of Oxygen Flow Rate on the Instability Under Positive Bias Stresses in DC-Sputtered Amorphous InGaZnO Thin-Film Transistors

    Sungchul Kim;Yong Woo Jeon;Yongsik Kim;Dongsik Kong

  • Modeling and characterization of metal-semiconductor-metal-based source-drain contacts in amorphous InGaZnO thin film transistors

    Sangwon Lee;Jun-Hyun Park;Kichan Jeon;Sungchul Kim

  • Extraction of Density of States in Amorphous GaInZnO Thin-Film Transistors by Combining an Optical Charge Pumping and Capacitance–Voltage Characteristics

    Jun-Hyun Park;Kichan Jeon;Sangwon Lee;Sunil Kim

  • A Highly Responsive Silicon Nanowire/Amplifier MOSFET Hybrid Biosensor

    Jieun Lee;Jaeman Jang;Bongsik Choi;Jinsu Yoon

Frequent Co-Authors

Dong Myong Kim
Dong Myong Kim Kookmin University
Byung-Gook Park
Byung-Gook Park Seoul National University
Jong-Ho Lee
Jong-Ho Lee Soongsil University
sang yoon lee
sang yoon lee Yonsei University
Sunil Kim
Sunil Kim Samsung (South Korea)
Ho Kim
Ho Kim Seoul National University

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Related Online Degrees & Career Pathways

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