World's Best Scientists 2026 revealed!
D. Schmitt-Landsiedel

D. Schmitt-Landsiedel

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
40
Citations
7713
World Ranking
4453
National Ranking
130

Overview

D. Schmitt-Landsiedel was affiliated with the Technical University of Munich in Germany. Their academic career involved contributions primarily within this institution.

There is no record available regarding their recent papers, co-authors, publication venues, or book publications. Similarly, specific information on their main fields of study, subfields, and topics of work has not been provided.

Additionally, no details about awards or honors have been documented. The scientist is deceased.

Best Publications

  • Yield and speed optimization of a latch-type voltage sense amplifier

    Unknown

  • Complementary tunneling transistor for low power application

    Unknown

  • A 128 × 128 CMOS bio-sensor array for extracellular recording of neural activity

    B. Eversmann;M. Jenkner;C. Paulus;F. Hofmann

  • A 0.5-V 1-μW successive approximation ADC

    Unknown

  • Invasive Computing: An Overview

    Jürgen Teich;Jörg Henkel;Andreas Herkersdorf;Doris Schmitt-Landsiedel

  • Stacked 3-dimensional 6T SRAM cell with independent double gate transistors

    Marcus Weis;Andrzej Pfitzner;Dominik Kasprowicz;Rainer Emling

  • Scaling properties of the tunneling field effect transistor (TFET): Device and circuit

    Unknown

  • A 0.7-V MOSFET-only switched-opamp ΣΔ modulator in standard digital CMOS technology

    Unknown

  • Optimization of high-speed CMOS logic circuits with analytical models for signal delay, chip area, and dynamic power dissipation

    B. Hoppe;G. Neuendorf;D. Schmitt-Landsiedel;W. Specks

  • Yield-oriented computer-aided defect diagnosis

    J.B. Khare;W. Maly;S. Griep;D. Schmitt-Landsiedel

  • The tunneling field effect transistor (TFET) as an add-on for ultra-low-voltage analog and digital processes

    Unknown

  • A 2 GHz 244 fs-Resolution 1.2 ps-Peak-INL Edge Interpolator-Based Digital-to-Time Converter in 28 nm CMOS

    Unknown

  • Dynamic degradation in MOSFET's. II. Application in the circuit environment

    Unknown

  • Experimental Demonstration of a 1-Bit Full Adder in Perpendicular Nanomagnetic Logic

    Unknown

  • A Pipelined 330 MHz Multiplier

    Unknown

  • In-Situ Delay Characterization and Local Supply Voltage Adjustment for Compensation of Local Parametric Variations

    Unknown

  • Impact of STI-induced stress, inverse narrow width effect, and statistical V/sub TH/ variations on leakage currents in 120 nm CMOS

    Unknown

  • Pipelined architecture for fast CMOS buffer RAMs

    D. Schmitt-Landsiedel;B. Hoppe;G. Neuendorf;M. Wurm

  • Architectural and Circuit Design Techniques for Power Management of Ultra-Low-Power MCU Systems

    Unknown

  • RF ESD protection strategies: Codesign vs. low-C protection

    W. Soldner;M. Streibl;U. Hodel;M. Tiebout

  • 1-Bit Full Adder in Perpendicular Nanomagnetic Logic using a Novel 5-Input Majority Gate

    Stephan Breitkreutz;Irina Eichwald;Josef Kiermaier;Adam Papp

  • Field-coupled nanomagnets for interconnect-free nonvolatile computing

    M. Becherer;G. Csaba;R. Emling;W. Porod

  • Field-coupled computing in magnetic multilayers

    György Csaba;Paolo Lugli;Markus Becherer;Doris Schmitt-Landsiedel

  • On-chip Extraordinary Hall-effect sensors for characterization of nanomagnetic logic devices

    M. Becherer;J. Kiermaier;S. Breitkreutz;G. Csaba

  • SRAM-based extraction of defect characteristics

    J. Khare;W. Maly;S. Griep;D. Schmitt-Landsiedel

  • Four-phase power clock generator for adiabatic logic circuits

    A. Bargagli-Stoffi;G. Iannaccone;S. Di Pascoli;E. Amirante

  • Clocking Schemes for Field Coupled Devices from Magnetic Multilayers

    Nikolaos Rizos;Murad Omar;Paolo Lugli;Gyorgy Csaba

  • AFFCCA: a tool for critical area analysis with circular defects and lithography deformed layout

    I. Bubel;W. Maly;T. Waas;P.K. Nag

  • Misuse protection device for chip card security system

    Max Dipl Ing Steger;Christopher Dr Hierold;Roland Dipl Ing Thewes;Manfred Dipl Ing Mauthe

  • Layout options for stability tuning of SRAM cells in multi-gate-FET technologies

    F. Bauer;K. von Arnim;C. Pacha;T. Schulz

  • Adder circuits with transistors using independently controlled gates

    Marcus Weis;Andrzej Pfitzner;Dominik Kasprowicz;Rainer Emling

  • Clocking magnetic field-coupled devices by domain walls

    György Csaba;Josef Kiermaier;Markus Becherer;Stephan Breitkreutz

  • Design of low-voltage MOSFET-only ΣΔ modulators in standard digital CMOS technology.

    Thomas Tille;Jens Sauerbrey;Manfred Mauthe;Doris Schmitt-Landsiedel

  • Low Power VCO Design in CMOS

    Kiyoo Itoh;Thomas Lee;Takayasu Sakurai;Willy M. C. Sansen

  • Reduction of the Energy Consumption in Adiabatic Gates by Optimal Transistor Sizing

    Jürgen Fischer;Ettore Amirante;Francesco Randazzo;Giuseppe Iannaccone

Frequent Co-Authors

Wojciech Maly
Wojciech Maly Carnegie Mellon University

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Best Scientists Citing D. Schmitt-Landsiedel