J. Wagner

Best Publications

• High performance InAs/Ga1-xInxSb superlattice infrared photodiodes

  F. Fuchs;U. Weimer;W. Pletschen;J. Schmitz

  293
  Citations

• The calibration of the strength of the localized vibrational modes of silicon impurities in epitaxial GaAs revealed by infrared absorption and Raman scattering

  R. Murray;R. C. Newman;M. J. L. Sangster;R. B. Beall

  201
  Citations

• GaN-based micro-LED arrays on flexible substrates for optical cochlear implants

  Christian Goßler;Colin Bierbrauer;Rüdiger Moser;Michael Kunzer

  190
  Citations

• Tunable Laser Diode System for Noninvasive Blood Glucose Measurements

  Jonathon T. Olesberg;Mark A. Arnold;Carmen Mermelstein;Johannes Schmitz

  176
  Citations

• High-brightness long-wavelength semiconductor disk lasers

  N. Schulz;J.M. Hopkins;M. Rattunde;D. Burns

  169
  Citations

• Identification of nnp and npp Auger recombination as significant contributor to the efficiency droop in (GaIn)N quantum wells by visualization of hot carriers in photoluminescence

  M. Binder;A. Nirschl;R. Zeisel;T. Hager

  168
  Citations

• Realization and modeling of a pseudomorphic (GaAs1−xSbx–InyGa1−yAs)/GaAs bilayer‐quantum well

  M. Peter;K. Winkler;M. Maier;N. Herres

  131
  Citations

• BAND GAPS AND BAND OFFSETS IN STRAINED GAAS1-YSBY ON INP GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION

  M. Peter;N. Herres;F. Fuchs;K. Winkler

  130
  Citations

• Effect of interfacial bonding on the structural and vibrational properties of InAs/GaSb superlattices

  N. Herres;F. Fuchs;J. Schmitz;K. M. Pavlov

  129
  Citations

• Influence of keyhole and conduction mode melting for top-hat shaped beam profiles in laser powder bed fusion

  Unknown

  124
  Citations

• Integration of In2O3 nanoparticle based ozone sensors with GaInN∕GaN light emitting diodes

  C. H. Y. Wang;V. Cimalla;Th. Kups;C. C. Rohlig

  114
  Citations

• Observation of extremely long electron-spin-relaxation times in p-type delta -doped GaAs/AlxGa1-xAs double heterostructures.

  J. Wagner;H. Schneider;D. Richards;A. Fischer

  110
  Citations

• Influence of indium content and temperature on Auger-like recombination in InGaN quantum wells grown on (111) silicon substrates

  B. Galler;P. Drechsel;R. Monnard;P. Rode

  106
  Citations

• N-induced vibrational modes in GaAsN and GaInAsN studied by resonant Raman scattering

  J. Wagner;T. Geppert;K. Köhler;P. Ganser

  104
  Citations

• Control of the mg doping profile in III-N light-emitting diodes and its effect on the electroluminescence efficiency

  K. Köhler;T. Stephan;A. Perona;J. Wiegert

  98
  Citations

• Optical and structural investigations of intermixing reactions at the interfaces of InAs/AlSb and InAs/GaSb quantum wells grown by molecular-beam epitaxy

  J. Schmitz;J. Wagner;F. Fuchs;N. Herres

  97
  Citations

• GaSb-based 2.X μm quantum-well diode lasers with low beam divergence and high output power

  M. Rattunde;J. Schmitz;G. Kaufel;M. Kelemen

  95
  Citations

• Reduced nonthermal rollover of wide-well GaInN light-emitting diodes

  Markus Maier;Klaus Köhler;Michael Kunzer;Wilfried Pletschen

  95
  Citations

• Hard amorphous carbon studied by ellipsometry and photoluminescence

  Unknown

  90
  Citations

• Optical constants and band gap of wurtzite Al1−xScxN/Al2O3 prepared by magnetron sputter epitaxy for scandium concentrations up to x = 0.41

  Martina Baeumler;Yuan Lu;Nicolas Kurz;Lutz Kirste

  88
  Citations