J. Wagner

J. Wagner publication distribution in Engineering and Technology in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Engineering and Technology in 2026. The highlighted bar marks where J. Wagner sits on this spectrum.

J. Wagner D-index placement in Engineering and Technology in 2026

The chart shows the D-index (discipline H-index) distribution of Engineering and Technology scientists ranked by Research.com in 2026. The highlighted bar marks where J. Wagner sits on this spectrum.

Best Publications

• High performance InAs/Ga1-xInxSb superlattice infrared photodiodes

  F. Fuchs;U. Weimer;W. Pletschen;J. Schmitz

  293
  Citations

• The calibration of the strength of the localized vibrational modes of silicon impurities in epitaxial GaAs revealed by infrared absorption and Raman scattering

  R. Murray;R. C. Newman;M. J. L. Sangster;R. B. Beall

  201
  Citations

• GaN-based micro-LED arrays on flexible substrates for optical cochlear implants

  Christian Goßler;Colin Bierbrauer;Rüdiger Moser;Michael Kunzer

  190
  Citations

• Tunable Laser Diode System for Noninvasive Blood Glucose Measurements

  Jonathon T. Olesberg;Mark A. Arnold;Carmen Mermelstein;Johannes Schmitz

  176
  Citations

• High-brightness long-wavelength semiconductor disk lasers

  N. Schulz;J.M. Hopkins;M. Rattunde;D. Burns

  169
  Citations

• Identification of nnp and npp Auger recombination as significant contributor to the efficiency droop in (GaIn)N quantum wells by visualization of hot carriers in photoluminescence

  M. Binder;A. Nirschl;R. Zeisel;T. Hager

  168
  Citations

• Realization and modeling of a pseudomorphic (GaAs1−xSbx–InyGa1−yAs)/GaAs bilayer‐quantum well

  M. Peter;K. Winkler;M. Maier;N. Herres

  131
  Citations

• BAND GAPS AND BAND OFFSETS IN STRAINED GAAS1-YSBY ON INP GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION

  M. Peter;N. Herres;F. Fuchs;K. Winkler

  130
  Citations

• Effect of interfacial bonding on the structural and vibrational properties of InAs/GaSb superlattices

  N. Herres;F. Fuchs;J. Schmitz;K. M. Pavlov

  129
  Citations

• Influence of keyhole and conduction mode melting for top-hat shaped beam profiles in laser powder bed fusion

  Unknown

  124
  Citations

• Integration of In2O3 nanoparticle based ozone sensors with GaInN∕GaN light emitting diodes

  C. H. Y. Wang;V. Cimalla;Th. Kups;C. C. Rohlig

  114
  Citations

• Observation of extremely long electron-spin-relaxation times in p-type delta -doped GaAs/AlxGa1-xAs double heterostructures.

  J. Wagner;H. Schneider;D. Richards;A. Fischer

  110
  Citations

• Influence of indium content and temperature on Auger-like recombination in InGaN quantum wells grown on (111) silicon substrates

  B. Galler;P. Drechsel;R. Monnard;P. Rode

  106
  Citations

• N-induced vibrational modes in GaAsN and GaInAsN studied by resonant Raman scattering

  J. Wagner;T. Geppert;K. Köhler;P. Ganser

  104
  Citations

• Control of the mg doping profile in III-N light-emitting diodes and its effect on the electroluminescence efficiency

  K. Köhler;T. Stephan;A. Perona;J. Wiegert

  98
  Citations

• Optical and structural investigations of intermixing reactions at the interfaces of InAs/AlSb and InAs/GaSb quantum wells grown by molecular-beam epitaxy

  J. Schmitz;J. Wagner;F. Fuchs;N. Herres

  97
  Citations

• GaSb-based 2.X μm quantum-well diode lasers with low beam divergence and high output power

  M. Rattunde;J. Schmitz;G. Kaufel;M. Kelemen

  95
  Citations

• Reduced nonthermal rollover of wide-well GaInN light-emitting diodes

  Markus Maier;Klaus Köhler;Michael Kunzer;Wilfried Pletschen

  95
  Citations

• Hard amorphous carbon studied by ellipsometry and photoluminescence

  Unknown

  90
  Citations

• Optical constants and band gap of wurtzite Al1−xScxN/Al2O3 prepared by magnetron sputter epitaxy for scandium concentrations up to x = 0.41

  Martina Baeumler;Yuan Lu;Nicolas Kurz;Lutz Kirste

  88
  Citations