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D-Index & Metrics

Materials Science

D-Index
63
Citations
14188
World Ranking
6182
National Ranking
1859

Changzhi Gu publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Changzhi Gu sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 409 publications — 78th percentile

78% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Changzhi Gu D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Changzhi Gu sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 63 D-Index — 53rd percentile

53% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Changzhi Gu is affiliated with the Chinese Academy of Sciences in China. Their research primarily spans the fields of Engineering and Materials Science, with a significant focus on interdisciplinary subfields such as Materials Chemistry, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics and Optics, and Biomedical Engineering.

The scientist's published work covers a variety of topical areas. These include:

  • Metamaterials and Metasurfaces Applications
  • 2D Materials and Applications
  • Plasmonic and Surface Plasmon Research
  • Advanced Antenna and Metasurface Technologies
  • Photonic and Optical Devices
  • Perovskite Materials and Applications
  • Graphene research and applications

Changzhi Gu frequently publishes in several key scientific journals and proceedings. The primary venues, arranged by the number of publications, include:

  • Laser & Photonics Review
  • Applied Physics Letters
  • Nano Letters
  • Advanced Functional Materials
  • Nature Communications

Their recent significant papers highlight advancements in two-dimensional materials, plasmonics, and metasurface technologies. Notable publications include:

  • "Universal mechanical exfoliation of large-area 2D crystals," 2020, Nature Communications
  • "Electromechanically reconfigurable optical nano-kirigami," 2021, Nature Communications
  • "Realization of a near-infrared active Fano-resonant asymmetric metasurface by precisely controlling the phase transition of Ge2Sb2Te5," 2020, Nanoscale
  • "Active multiband varifocal metalenses based on orbital angular momentum division multiplexing," 2022, Nature Communications
  • "Multidimensional Image and Beam Splitter Based on Hyperbolic Metamaterials," 2021, Nano Letters

Collaboration forms an essential part of Changzhi Gu's research activities. The frequent coauthors include:

  • Junjie Li
  • Shuo Du
  • Baoli Liu
  • Yang Guo
  • Ruhao Pan

Best Publications

  • Recent advances in synthesis, physical properties and applications of conducting polymer nanotubes and nanofibers

    Yun-Ze Long;Yun-Ze Long;Meng-Meng Li;Changzhi Gu;Meixiang Wan

  • Universal mechanical exfoliation of large-area 2D crystals

    Yuan Huang;Yu-Hao Pan;Rong Yang;Li-Hong Bao

  • Multichannel ballistic transport in multiwall carbon nanotubes.

    H. J. Li;W. G. Lu;J. J. Li;X. D. Bai

  • CVD synthesis of large-area, highly crystalline MoSe2 atomic layers on diverse substrates and application to photodetectors.

    Jing Xia;Xing Huang;Xing Huang;Lingzhi Liu;Meng Wang

  • Recent advances in large-scale assembly of semiconducting inorganic nanowires and nanofibers for electronics, sensors and photovoltaics.

    Yun-Ze Long;Miao Yu;Bin Sun;Chang-Zhi Gu

  • Fluorination and Electrical Conductivity of BN Nanotubes

    Chengchun Tang;Yoshio Bando;Yang Huang;Shuanglin Yue

  • Thickness-dependent morphologies of gold on n-layer graphenes.

    Haiqing Zhou;Caiyu Qiu;Zheng Liu;Huaichao Yang

  • Simultaneous Control of Light Polarization and Phase Distributions Using Plasmonic Metasurfaces

    Jianxiong Li;Shuqi Chen;Haifang Yang;Junjie Li

  • Individual Water-Filled Single-Walled Carbon Nanotubes as Hydroelectric Power Converters

    Yuanchun Zhao;Li Song;Ke Deng;Zheng Liu

  • Direct Observations of Nanofilament Evolution in Switching Processes in HfO2‐Based Resistive Random Access Memory by In Situ TEM Studies

    Chao Li;Bin Gao;Yuan Yao;Xiangxiang Guan

  • Alkanethiol-functionalized terahertz metamaterial as label-free, highly-sensitive and specific biosensor.

    Xiaojun Wu;Baogang Quan;Xuecong Pan;Xinlong Xu;Xinlong Xu

  • Polarization insensitive and omnidirectional broadband near perfect planar metamaterial absorber in the near infrared regime

    Shuqi Chen;Hua Cheng;Haifang Yang;Junjie Li

  • Demonstration of Orbital Angular Momentum Multiplexing and Demultiplexing Based on a Metasurface in the Terahertz Band

    Huan Zhao;Baogang Quan;Xinke Wang;Changzhi Gu

  • Tunable mid-infrared coherent perfect absorption in a graphene meta-surface

    Yuancheng Fan;Zhe Liu;Fuli Zhang;Qian Zhao

  • Nanosphere lithography for the fabrication of ultranarrow graphene nanoribbons and on-chip bandgap tuning of graphene.

    Lei Liu;Yingli Zhang;Wenlong Wang;Changzhi Gu

  • High‐Quality‐Factor Mid‐Infrared Toroidal Excitation in Folded 3D Metamaterials

    Zhe Liu;Shuo Du;Ajuan Cui;Zhancheng Li

  • Universal mechanical exfoliation of large-area 2D crystals

    Yuan Huang;Yu-Hao Pan;Rong Yang;Li-Hong Bao

  • Electromechanically reconfigurable optical nano-kirigami.

    Shanshan Chen;Zhiguang Liu;Huifeng Du;Chengchun Tang

  • Electronic transport in single polyaniline and polypyrrole microtubes

    Yunze Long;Lijuan Zhang;Zhaojia Chen;Kun Huang

  • Sub-5 nm Metal Nanogaps: Physical Properties, Fabrication Methods, and Device Applications.

    Yang Yang;Changzhi Gu;Junjie Li

  • Converting Metallic Single‐Walled Carbon Nanotubes into Semiconductors by Boron/Nitrogen Co‐Doping

    Zhi Xu;Wengang Lu;Wenlong Wang;Changzhi Gu

  • Intrinsic memory function of carbon nanotube-based ferroelectric field-effect transistor.

    Wangyang Fu;Zhi Xu;Xuedong Bai;Changzhi Gu

Frequent Co-Authors

Junjie Li
Junjie Li Chinese Academy of Sciences
Lianfeng Sun
Lianfeng Sun Chinese Academy of Sciences
Xinlong Xu
Xinlong Xu Northwest University
Shuqi Chen
Shuqi Chen Nankai University
Hong-Jun Gao
Hong-Jun Gao Chinese Academy of Sciences
Zheng Liu
Zheng Liu Nanyang Technological University
Hong Li
Hong Li Chinese Academy of Sciences
Yun-Ze Long
Yun-Ze Long Qingdao University
Jianguo Tian
Jianguo Tian Nankai University
Qiang Zhang
Qiang Zhang Peking University

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