World's Best Scientists 2026 revealed!

D-Index & Metrics

Engineering and Technology

D-Index
39
Citations
4930
World Ranking
7816
National Ranking
2139

Overview

Anthony D. Kurtz was affiliated with Columbia University in the United States. Their research output included contributions primarily in the fields of Materials Science and Engineering, with a particular focus on Biomaterials, Surfaces, Coatings and Films, and Biomedical Engineering.

The scientist's work concentrated on topics such as Supramolecular Self-Assembly in Materials, Polymer Surface Interaction Studies, and Advanced Sensor and Energy Harvesting Materials. These topics featured prominently in their research publications.

Among the notable publications attributed to Kurtz was a 2024 paper titled "Tailoring Cell Attachment onto Melt Electrowritten Scaffolds via a Phase Separated Hydrogel Coating with Peptide Functionalization", which appeared in the journal Advanced Materials Interfaces. This work demonstrated interdisciplinary engagement combining material design with biological surface functionalization.

  • Kelly L. O'Neill
  • Ievgenii Liashenko
  • Guilherme Z. Rocha
  • Naomi C. Paxton
  • Paul D. Dalton

The scientist frequently collaborated with a group of co-authors, including Kelly L. O'Neill, Ievgenii Liashenko, Guilherme Z. Rocha, Naomi C. Paxton, and Paul D. Dalton, reflecting a network of partnerships likely contributing to their research output.

  • Advanced Materials Interfaces

The main publication venue associated with Kurtz's work was Advanced Materials Interfaces. This choice of journal aligns with their focus on materials science and interdisciplinary approaches to surface and biomedical materials research.

Best Publications

  • Process of bonding semiconductor wafers having conductive semiconductor material extending through each wafer at the bond areas

    Anthony D. Kurtz;Alexander A. Ned

  • Sensors for use in high vibrational applications and methods for fabricating same

    Anthony D. Kurtz;Alexander A. Ned

  • Characterization of n-type beta -SiC as a piezoresistor

    Unknown

  • Direct observation of porous SiC formed by anodization in HF

    Unknown

  • Media compatible pressure transducer

    Anthony D. Kurtz;Joseph R. Mallon

  • Fusion bonding technique for use in fabricating semiconductor devices

    Anthony D. Kurtz;Alexander A. Ned

  • Photoelectrochemical Etching of 6 H ‐ SiC

    Joseph S. Shor;Anthony D. Kurtz

  • Effect of Dislocations on the Minority Carrier Lifetime in Semiconductors

    Unknown

  • Operation of α(6H)-SiC pressure sensor at 500 °C

    Unknown

  • Semiconductor transducers employing flexure frames

    Anthony D. Kurtz;Joseph R. Mallon;Timothy A. Nunn

  • Characterization of highly doped n- and p-type 6H-SiC piezoresistors

    Unknown

  • Characterization of monolithic n-type 6H-SiC piezoresistive sensing elements

    Unknown

  • Ultra thin surface mount wafer sensor structures and methods for fabricating same

    Anthony D. Kurtz;Alexander Ned;Scott J. Goodman

  • Fabrication of dielectrically isolated fine line semiconductor transducers and apparatus

    Anthony D. Kurtz;Timothy A. Nunn;Richard A. Weber

  • Porous silicon carbide (SiC) semiconductor device

    Joseph S. Shor;Anthony D. Kurtz

  • Method for fabricating a beam pressure sensor employing dielectrically isolated resonant beams

    Anthony D. Kurtz;Alexander A. Ned

  • System for detecting and compensating for aerodynamic instabilities in turbo-jet engines

    Anthony D. Kurtz;John Chivers;Alan Epstein

  • High temperature transducers and housing including fabrication methods

    Anthony D. Kurtz;Joseph R. Mallon

  • Dielectrically isolated transducer employing single crystal strain gages

    Anthony D. Kurtz;Timothy A. Nunn;Joseph R. Mallon

  • Transducer structures employing ceramic substrates and diaphragms

    Anthony D. Kurtz;Joseph R. Mallon;Timothy A. Nunn

  • Oil-filled pressure transducer

    Anthony D. Kurtz;Robert Gardner

  • Infrared reflectance of thick p-type porous SiC layers

    M. F. MacMillan;R. P. Devaty;W. J. Choyke;D. R. Goldstein

  • Method of fabricating transducer structure employing vertically walled diaphragms with quasi rectangular active areas

    Joseph R. Mallon;Anthony D. Kurtz

  • Integral transducer structures employing high conductivity surface features

    Anthony D. Kurtz;Timothy A. Nunn;Richard A. Weber

  • Hermetically sealed transducers and methods for producing the same

    Anthony D. Kurtz;Alexander Ned

  • Nanotube and graphene semiconductor structures with varying electrical properties

    Anthony D. Kurtz;Adam Hurst

Frequent Co-Authors

Irving P. Herman
Irving P. Herman Columbia University
Sangsig Kim
Sangsig Kim Korea University

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