| Discipline name | Position | Best Scientists | Publications | D-Index |
|---|---|---|---|---|
| Electronics and Electrical Engineering | 258 | 81 | 87 | 14 |
| Materials Science | 602 | 36 | 43 | 8 |
The journal covers a variety of subjects, including Optoelectronics, Electronic engineering, Electrical engineering, Transistor and Reliability (semiconductor). The work on Optoelectronics tackled in IEEE Transactions on Device and Materials Reliability brings together disciplines like Stress (mechanics), Logic gate and MOSFET. Research in the field of Composite material was used to conduct the presented Stress (mechanics) study.
The in-depth study on Composite material also explores topics in the intersecting field of Finite element method. Electronic engineering research featured in IEEE Transactions on Device and Materials Reliability incorporates concerns from various other topics such as Negative-bias temperature instability, Electronic circuit, Silicon, Reliability engineering and Integrated circuit. Discussions in it are anchored in the subject of Electrical engineering and the similar topic of Condensed matter physics.
Transistor research is the primary subject tackled in the journal with a focus on Threshold voltage. The journal links adjacent topics like Dielectric with Gate dielectric. Diode and Light-emitting diode are closely related fields of research discussed in the journal.
The journal publications are mainly concerned with subjects like Electronic engineering, Optoelectronics, Electrical engineering, Reliability (semiconductor) and CMOS. The works on Electronic engineering tackled in the most cited papers bring together disciplines like Reliability engineering, Integrated circuit and MOSFET. The most cited papers address concerns in Optoelectronics which are intertwined with other disciplines, such as Threshold voltage, Transistor and Gallium nitride.
The journal primarily tackles Optoelectronics, Transistor, Stress (mechanics), Reliability (semiconductor) and Logic gate. The presented studies in Diode fall within the purview of Optoelectronics but it also intertwines with topics in Ternary operation. It deals with Transistor in conjunction with CMOS and similar fields in Integrated circuit and NMOS logic.
Stress (mechanics) research presented in the journal encompasses a variety of subjects, including Wide-bandgap semiconductor, Durability, Finite element method and Dielectric. Topics in Reliability (semiconductor) were tackled in line with various other fields like Electronic engineering and Light-emitting diode. Issues in Electronic engineering were discussed, taking into consideration concepts from other disciplines like Sense amplifier and Power–delay product.
A key indicator for each journal is its effectiveness in reaching other researchers with the papers published at that venue.
The chart below presents the interquartile range (first quartile 25%, median 50% and third quartile 75%) of the number of citations of articles over time.
The top authors publishing in IEEE Transactions on Device and Materials Reliability (based on the number of publications) are:
The overall trend for top authors publishing in this journal is outlined below. The chart shows the number of publications at each edition of the journal for top authors.
Only papers with recognized affiliations are considered
The top affiliations publishing in IEEE Transactions on Device and Materials Reliability (based on the number of publications) are:
The overall trend for top affiliations publishing in this journal is outlined below. The chart shows the number of publications at each edition of the journal for top affiliations.
The publication chance index shows the ratio of articles published by the best research institutions in the journal edition to all articles published within that journal. The best research institutions were selected based on the largest number of articles published during all editions of the journal.
The chart below presents the percentage ratio of articles from top institutions (based on their ranking of total papers).Top affiliations were grouped by their rank into the following tiers: top 1-10, top 11-20, top 21-50, and top 51+. Only articles with a recognized affiliation are considered.
During the most recent 2021 edition, 25.33% of publications had an unrecognized affiliation. Out of the publications with recognized affiliations, 19.64% were posted by at least one author from the top 10 institutions publishing in the journal. Another 7.14% included authors affiliated with research institutions from the top 11-20 affiliations. Institutions from the 21-50 range included 23.21% of all publications and 50.00% were from other institutions.
A very common phenomenon observed among researchers publishing scientific articles is the intentional selection of journals they have already attended in the past. In particular, it is worth analyzing the case when the authors participate in the same journal from year to year.
The Returning Authors Index presented below illustrates the ratio of authors who participated in both a given as well as the previous edition of the journal in relation to all participants in a given year.
The graph below shows the Returning Institution Index, illustrating the ratio of institutions that participated in both a given and the previous edition of the conference in relation to all affiliations present in a given year.
Our experience to innovation index was created to show a cross-section of the experience level of authors publishing in a journal. The index includes the authors publishing at the last edition of a journal, grouped by total number of publications throughout their academic career (P) and the total number of citations of these publications ever received (C).
The group intervals were selected empirically to best show the diversity of the authors' experiences, their labels were selected as a convenience, not as judgment. The authors were divided into the following groups:
The chart below illustrates experience levels of first authors in cases of publications with multiple authors.
Arno Stockman;Eleonora Canato;Matteo Meneghini;Gaudenzio Meneghesso
(2021)Souvik Mahapatra;Narendra Parihar
(2020)Santosh Ghosh;Vinod K. Yadav;Vivekananda Mukherjee
(2020)Abdolah Amirany;Kian Jafari;Mohammad Hossein Moaiyeri
(2021)Ian Hill;Parvez Chanawala;Rohit Singh;S. Arash Sheikholeslam
(2021)Dariush Madadi;Ali Asghar Orouji
(2021)Shreyasi Das;Vandana Kumari;Khushwant Sehra;Mridula Gupta
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