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IEEE Transactions on Device and Materials Reliability
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IEEE Transactions on Device and Materials Reliability

Ranking & Metrics

Discipline name Position Best Scientists Publications D-Index
Electronics and Electrical Engineering 258 81 87 14
Materials Science 602 36 43 8

Additional Metrics

Number of Best Scientists*: 131
Documents by Best Scientists*: 136
Top 100 Ranked Scientists*: 6
SCIMAGO H-index: 82
SCIMAGO SJR: 0.533
Impact Factor: 2.3

Overview

Top Research Topics at IEEE Transactions on Device and Materials Reliability?

The journal covers a variety of subjects, including Optoelectronics, Electronic engineering, Electrical engineering, Transistor and Reliability (semiconductor). The work on Optoelectronics tackled in IEEE Transactions on Device and Materials Reliability brings together disciplines like Stress (mechanics), Logic gate and MOSFET. Research in the field of Composite material was used to conduct the presented Stress (mechanics) study.

The in-depth study on Composite material also explores topics in the intersecting field of Finite element method. Electronic engineering research featured in IEEE Transactions on Device and Materials Reliability incorporates concerns from various other topics such as Negative-bias temperature instability, Electronic circuit, Silicon, Reliability engineering and Integrated circuit. Discussions in it are anchored in the subject of Electrical engineering and the similar topic of Condensed matter physics.

Transistor research is the primary subject tackled in the journal with a focus on Threshold voltage. The journal links adjacent topics like Dielectric with Gate dielectric. Diode and Light-emitting diode are closely related fields of research discussed in the journal.

  • Optoelectronics (30.46%)
  • Electronic engineering (29.25%)
  • Electrical engineering (21.89%)

What are the most cited papers published in the journal?

  • Radiation-induced soft errors in advanced semiconductor technologies (1111 citations)
  • Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives (455 citations)
  • Review on high-k dielectrics reliability issues (434 citations)

Research areas of the most cited articles at IEEE Transactions on Device and Materials Reliability:

The journal publications are mainly concerned with subjects like Electronic engineering, Optoelectronics, Electrical engineering, Reliability (semiconductor) and CMOS. The works on Electronic engineering tackled in the most cited papers bring together disciplines like Reliability engineering, Integrated circuit and MOSFET. The most cited papers address concerns in Optoelectronics which are intertwined with other disciplines, such as Threshold voltage, Transistor and Gallium nitride.

What topics the last edition of the journal is best known for?

  • Composite material
  • Electrical engineering
  • Semiconductor

The previous edition focused in particular on these issues:

The journal primarily tackles Optoelectronics, Transistor, Stress (mechanics), Reliability (semiconductor) and Logic gate. The presented studies in Diode fall within the purview of Optoelectronics but it also intertwines with topics in Ternary operation. It deals with Transistor in conjunction with CMOS and similar fields in Integrated circuit and NMOS logic.

Stress (mechanics) research presented in the journal encompasses a variety of subjects, including Wide-bandgap semiconductor, Durability, Finite element method and Dielectric. Topics in Reliability (semiconductor) were tackled in line with various other fields like Electronic engineering and Light-emitting diode. Issues in Electronic engineering were discussed, taking into consideration concepts from other disciplines like Sense amplifier and Power–delay product.

The most cited articles from the last journal are:

  • Effect of Wiring Density and Pillar Structure on Chip Packaging Interaction for Mixed-Signal Cu Low k Chips (5 citations)
  • Reliability and Performance Analysis of Logic-in-Memory Based Binarized Neural Networks (3 citations)
  • Time and Temperature Dependence of Copper Protrusion in Metallized Through-Glass Vias (TGVs) Fabricated in Fused Silica Substrate (2 citations)

Papers citation over time

A key indicator for each journal is its effectiveness in reaching other researchers with the papers published at that venue.

The chart below presents the interquartile range (first quartile 25%, median 50% and third quartile 75%) of the number of citations of articles over time.

The top authors publishing in IEEE Transactions on Device and Materials Reliability (based on the number of publications) are:

  • Michael Pecht (40 papers) published 1 paper at the last edition,
  • Ming-Dou Ker (35 papers) absent at the last edition,
  • Guido Groeseneken (26 papers) absent at the last edition,
  • Gaudenzio Meneghesso (21 papers) published 1 paper at the last edition the same number as at the previous edition,
  • Pedro Reviriego (20 papers) absent at the last edition.

The overall trend for top authors publishing in this journal is outlined below. The chart shows the number of publications at each edition of the journal for top authors.

Only papers with recognized affiliations are considered

The top affiliations publishing in IEEE Transactions on Device and Materials Reliability (based on the number of publications) are:

  • National Chiao Tung University (67 papers) absent at the last edition,
  • Katholieke Universiteit Leuven (63 papers) published 4 papers at the last edition, 4 less than at the previous edition,
  • University of Maryland, College Park (50 papers) published 1 paper at the last edition,
  • IBM (42 papers) absent at the last edition,
  • Intel (35 papers) absent at the last edition.

The overall trend for top affiliations publishing in this journal is outlined below. The chart shows the number of publications at each edition of the journal for top affiliations.

Publication chance based on affiliation

The publication chance index shows the ratio of articles published by the best research institutions in the journal edition to all articles published within that journal. The best research institutions were selected based on the largest number of articles published during all editions of the journal.

The chart below presents the percentage ratio of articles from top institutions (based on their ranking of total papers).Top affiliations were grouped by their rank into the following tiers: top 1-10, top 11-20, top 21-50, and top 51+. Only articles with a recognized affiliation are considered.

During the most recent 2021 edition, 25.33% of publications had an unrecognized affiliation. Out of the publications with recognized affiliations, 19.64% were posted by at least one author from the top 10 institutions publishing in the journal. Another 7.14% included authors affiliated with research institutions from the top 11-20 affiliations. Institutions from the 21-50 range included 23.21% of all publications and 50.00% were from other institutions.

Returning Authors Index

A very common phenomenon observed among researchers publishing scientific articles is the intentional selection of journals they have already attended in the past. In particular, it is worth analyzing the case when the authors participate in the same journal from year to year.

The Returning Authors Index presented below illustrates the ratio of authors who participated in both a given as well as the previous edition of the journal in relation to all participants in a given year.

Returning Institution Index

The graph below shows the Returning Institution Index, illustrating the ratio of institutions that participated in both a given and the previous edition of the conference in relation to all affiliations present in a given year.

The experience to innovation index

Our experience to innovation index was created to show a cross-section of the experience level of authors publishing in a journal. The index includes the authors publishing at the last edition of a journal, grouped by total number of publications throughout their academic career (P) and the total number of citations of these publications ever received (C).

The group intervals were selected empirically to best show the diversity of the authors' experiences, their labels were selected as a convenience, not as judgment. The authors were divided into the following groups:

  • Novice - P < 5 or C < 25 (the number of publications less than 5 or the number of citations less than 25),
  • Competent - P < 10 or C < 100 (the number of publications less than 10 or the number of citations less than 100),
  • Experienced - P < 25 or C < 625 (the number of publications less than 25 or the number of citations less than 625),
  • Master - P < 50 or C < 2500 (the number of publications less than 50 or the number of citations less than 2500),
  • Star - P ≥ 50 and C ≥ 2500 (both the number of publications greater than 50 and the number of citations greater than 2500).

The chart below illustrates experience levels of first authors in cases of publications with multiple authors.

Top Publications

  • Schottky Gate Induced Threshold Voltage Instabilities in p-GaN Gate AlGaN/GaN HEMTs

    Arno Stockman;Eleonora Canato;Matteo Meneghini;Gaudenzio Meneghesso

    (2021)
    32 Citations
  • Modeling of NBTI Using BAT Framework: DC-AC Stress-Recovery Kinetics, Material, and Process Dependence

    Souvik Mahapatra;Narendra Parihar

    (2020)
    31 Citations
  • A Novel Hot Spot Mitigation Circuit for Improved Reliability of PV Module

    Santosh Ghosh;Vinod K. Yadav;Vivekananda Mukherjee

    (2020)
    30 Citations
  • Low Conductance State Drift Characterization and Mitigation in Resistive Switching Memories (RRAM) for Artificial Neural Networks

    (2022)
    27 Citations
  • High-Performance Radiation-Hardened Spintronic Retention Latch and Flip-Flop for Highly Reliable Processors

    Abdolah Amirany;Kian Jafari;Mohammad Hossein Moaiyeri

    (2021)
    23 Citations
  • CMOS Reliability from Past to Future: A Survey of Requirements, Trends, and Prediction Methods

    Ian Hill;Parvez Chanawala;Rohit Singh;S. Arash Sheikholeslam

    (2021)
    21 Citations
  • A β -Ga₂O₃ MESFET to Amend the Carrier Distribution by Using a Tunnel Diode

    Dariush Madadi;Ali Asghar Orouji

    (2021)
    21 Citations
  • TCAD Based Investigation of Single Event Transient Effect in Double Channel AlGaN/GaN HEMT

    Shreyasi Das;Vandana Kumari;Khushwant Sehra;Mridula Gupta

    (2021)
    18 Citations
  • A 10T Soft-Error-Immune SRAM With Multi-Node Upset Recovery for Low-Power Space Applications

    (2022)
    17 Citations

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Best Scientists Contributing to This Journal