Wilfried Haensch

Best Publications

• Sub-10 nm carbon nanotube transistor.

  Aaron D. Franklin;Mathieu Luisier;Shu-Jen Han;George Tulevski

  1111
  Citations

• Stable SRAM cell design for the 32 nm node and beyond

  L. Chang;D.M. Fried;J. Hergenrother;J.W. Sleight

  868
  Citations

• High-performance CMOS variability in the 65-nm regime and beyond

  K. Bernstein;D. J. Frank;A. E. Gattiker;W. Haensch

  715
  Citations

• Silicon CMOS devices beyond scaling

  W. Haensch;E. J. Nowak;R. H. Dennard;P. M. Solomon

  604
  Citations

• Arrays of single-walled carbon nanotubes with full surface coverage for high-performance electronics

  Qing Cao;Shu Jen Han;George S. Tulevski;Yu Zhu

  558
  Citations

• High-density integration of carbon nanotubes via chemical self-assembly

  Hongsik Park;Ali Afzali;Shu-Jen Han;George S. Tulevski

  441
  Citations

• Interconnects in the third dimension: design challenges for 3D ICs

  Kerry Bernstein;Paul Andry;Jerome Cann;Phil Emma

  347
  Citations

• Toward High-Performance Digital Logic Technology With Carbon Nanotubes

  George S. Tulevski;Aaron D. Franklin;David Frank;Jose M. Lobez

  331
  Citations

• Ultralow-voltage, minimum-energy CMOS

  S. Hanson;B. Zhai;K. Bernstein;D. Blaauw

  309
  Citations

• Graphene radio frequency receiver integrated circuit

  Shu-Jen Han;Alberto Valdes Garcia;Satoshi Oida;Keith A. Jenkins

  304
  Citations

• The effective drive current in CMOS inverters

  M.H. Na;E.J. Nowak;W. Haensch;J. Cai

  295
  Citations

• Extreme scaling with ultra-thin Si channel MOSFETs

  B. Doris;Meikei Ieong;T. Kanarsky;Ying Zhang

  289
  Citations

• Metal-gate FinFET and fully-depleted SOI devices using total gate silicidation

  J. Kedzierski;E. Nowak;T. Kanarsky;Y. Zhang

  282
  Citations

• End-bonded contacts for carbon nanotube transistors with low, size-independent resistance.

  Qing Cao;Shu-Jen Han;Jerry Tersoff;Aaron D. Franklin

  265
  Citations

• A Compact Virtual-Source Model for Carbon Nanotube FETs in the Sub-10-nm Regime—Part I: Intrinsic Elements

  C.-S. Lee;E. Pop;A. D. Franklin;W. Haensch

  259
  Citations

• Electrical integrity of state-of-the-art 0.13 /spl mu/m SOI CMOS devices and circuits transferred for three-dimensional (3D) integrated circuit (IC) fabrication

  K.W. Guarini;A.W. Topol;M. Ieong;R. Yu

  240
  Citations

• Practical Strategies for Power-Efficient Computing Technologies

  L. Chang;D.J. Frank;R.K. Montoye;S.J. Koester

  239
  Citations

• High frequency graphene Voltage amplifier

  Shu Jen Han;Keith A. Jenkins;Alberto Valdes Garcia;Aaron D. Franklin

  233
  Citations

• Sharp Reduction of Contact Resistivities by Effective Schottky Barrier Lowering With Silicides as Diffusion Sources

  Zhen Zhang;F Pagette;C D'Emic;B Yang

  216
  Citations

• The Next Generation of Deep Learning Hardware: Analog Computing

  Wilfried Haensch;Tayfun Gokmen;Ruchir Puri

  213
  Citations