Wilfried Haensch

Wilfried Haensch publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Wilfried Haensch sits on this spectrum.

Wilfried Haensch D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Wilfried Haensch sits on this spectrum.

Best Publications

• Sub-10 nm carbon nanotube transistor.

  Aaron D. Franklin;Mathieu Luisier;Shu-Jen Han;George Tulevski

  1111
  Citations

• Stable SRAM cell design for the 32 nm node and beyond

  L. Chang;D.M. Fried;J. Hergenrother;J.W. Sleight

  868
  Citations

• High-performance CMOS variability in the 65-nm regime and beyond

  K. Bernstein;D. J. Frank;A. E. Gattiker;W. Haensch

  715
  Citations

• Silicon CMOS devices beyond scaling

  W. Haensch;E. J. Nowak;R. H. Dennard;P. M. Solomon

  604
  Citations

• Arrays of single-walled carbon nanotubes with full surface coverage for high-performance electronics

  Qing Cao;Shu Jen Han;George S. Tulevski;Yu Zhu

  558
  Citations

• High-density integration of carbon nanotubes via chemical self-assembly

  Hongsik Park;Ali Afzali;Shu-Jen Han;George S. Tulevski

  441
  Citations

• Interconnects in the third dimension: design challenges for 3D ICs

  Kerry Bernstein;Paul Andry;Jerome Cann;Phil Emma

  347
  Citations

• Toward High-Performance Digital Logic Technology With Carbon Nanotubes

  George S. Tulevski;Aaron D. Franklin;David Frank;Jose M. Lobez

  331
  Citations

• Ultralow-voltage, minimum-energy CMOS

  S. Hanson;B. Zhai;K. Bernstein;D. Blaauw

  309
  Citations

• Graphene radio frequency receiver integrated circuit

  Shu-Jen Han;Alberto Valdes Garcia;Satoshi Oida;Keith A. Jenkins

  304
  Citations

• The effective drive current in CMOS inverters

  M.H. Na;E.J. Nowak;W. Haensch;J. Cai

  295
  Citations

• Extreme scaling with ultra-thin Si channel MOSFETs

  B. Doris;Meikei Ieong;T. Kanarsky;Ying Zhang

  289
  Citations

• Metal-gate FinFET and fully-depleted SOI devices using total gate silicidation

  J. Kedzierski;E. Nowak;T. Kanarsky;Y. Zhang

  282
  Citations

• End-bonded contacts for carbon nanotube transistors with low, size-independent resistance.

  Qing Cao;Shu-Jen Han;Jerry Tersoff;Aaron D. Franklin

  265
  Citations

• A Compact Virtual-Source Model for Carbon Nanotube FETs in the Sub-10-nm Regime—Part I: Intrinsic Elements

  C.-S. Lee;E. Pop;A. D. Franklin;W. Haensch

  259
  Citations

• Electrical integrity of state-of-the-art 0.13 /spl mu/m SOI CMOS devices and circuits transferred for three-dimensional (3D) integrated circuit (IC) fabrication

  K.W. Guarini;A.W. Topol;M. Ieong;R. Yu

  240
  Citations

• Practical Strategies for Power-Efficient Computing Technologies

  L. Chang;D.J. Frank;R.K. Montoye;S.J. Koester

  239
  Citations

• High frequency graphene Voltage amplifier

  Shu Jen Han;Keith A. Jenkins;Alberto Valdes Garcia;Aaron D. Franklin

  233
  Citations

• Sharp Reduction of Contact Resistivities by Effective Schottky Barrier Lowering With Silicides as Diffusion Sources

  Zhen Zhang;F Pagette;C D'Emic;B Yang

  216
  Citations

• The Next Generation of Deep Learning Hardware: Analog Computing

  Wilfried Haensch;Tayfun Gokmen;Ruchir Puri

  213
  Citations