The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Gotthard Seifert sits on this spectrum.
This scientist: 478 publications — 85th percentile
85% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 1,163 publications or more.
The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Gotthard Seifert sits on this spectrum.
This scientist: 98 D-Index — 91st percentile
91% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 165 D-Index or more.
Gotthard Seifert is affiliated with TU Dresden in Germany and has a research profile spanning materials science and physics. Their work focuses significantly on materials chemistry, with contributions to atomic and molecular physics, optics, electrical and electronic engineering, condensed matter physics, and theoretical chemistry.
The scientist has published extensively on topics related to 2D materials and applications, graphene research, and X-ray diffraction in crystallography. Other key research areas include crystallization and solubility studies, nonlocal and gradient elasticity in micro/nano structures, physics of superconductivity and magnetism, and force microscopy techniques and applications.
Recent publications by Gotthard Seifert include:
Frequent co-authors who have collaborated with Seifert include Dong-Bo Zhang, Jiangao Li, Jan-Ole Joswig, Michael Ruck, and D. Hoppe.
Publishing venues where Seifert's research appears repeatedly include The Cambridge Structural Database, arXiv (Cornell University), Physical Review B, Nano Letters, and Theoretical Chemistry Accounts.
Gotthard Seifert's interdisciplinary approach brings together experimental and theoretical methods across multiple domains in materials science and physics, contributing to an improved understanding of advanced materials at atomic and molecular levels.
M. Elstner;M. Elstner;D. Porezag;G. Jungnickel;J. Elsner
D. Porezag;Th. Frauenheim;Th. Köhler;G. Seifert
G. Seifert;D. Porezag;Th. Frauenheim
Igor Popov;Gotthard Seifert;David Tománek
Serguei Patchkovskii;John S. Tse;Sergei N. Yurchenko;Lyuben Zhechkov
Th. Frauenheim;G. Seifert;M. Elsterner;Z. Hajnal
Gotthard Seifert;Humberto Terrones;Humberto Terrones;Mauricio Terrones;Gerd Jungnickel
Thomas Frauenheim;Gotthard Seifert;Marcus Elstner;Thomas Niehaus
Andrey N. Enyashin;Lena Yadgarov;Lothar Houben;Igor Popov
Clemence Corminboeuf;Thomas Heine;Gotthard Seifert;Paul von Ragué Schleyer
Marcus Elstner;Gotthard Seifert
Thomas A. Niehaus;S. Suhai;F. Della Sala;P. Lugli
Jens Kunstmann;Fabian Mooshammer;Philipp Nagler;Andrey Chaves;Andrey Chaves
Chenbao Lu;Diana Tranca;Jian Zhang;Fermı N Rodrı Guez Hernández;Fermı N Rodrı Guez Hernández
G. Seifert;P.W. Fowler;D. Mitchell;D. Porezag
Hafeesudeen Sahabudeen;Haoyuan Qi;Bernhard Alexander Glatz;Diana Tranca
Lyuben Zhechkov;Thomas Heine;Serguei Patchkovskii;Gotthard Seifert
A. Zobelli;A. Zobelli;A. Gloter;Christopher Ewels;G. Seifert
W Münch;K.-D Kreuer;W Silvestri;J Maier
Gabriel Merino;Thomas Heine;Gotthard Seifert
Ifat Kaplan-Ashiri;Sidney R. Cohen;Konstantin Gartsman;Viktoria Ivanovskaya
Seifert G
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