Daniel Friedman

Best Publications

• Band Anticrossing in GaInNAs Alloys

  W. Shan;W. Walukiewicz;J. W. Ager;E. E. Haller

  2068
  Citations

• 40.8% efficient inverted triple-junction solar cell with two independently metamorphic junctions

  J. F. Geisz;D. J. Friedman;J. S. Ward;A. Duda

  629
  Citations

• High-efficiency GaInP∕GaAs∕InGaAs triple-junction solar cells grown inverted with a metamorphic bottom junction

  J. F. Geisz;Sarah Kurtz;M. W. Wanlass;J. S. Ward

  622
  Citations

• A 28-GHz 32-Element TRX Phased-Array IC With Concurrent Dual-Polarized Operation and Orthogonal Phase and Gain Control for 5G Communications

  Bodhisatwa Sadhu;Yahya Tousi;Joakim Hallin;Stefan Sahl

  568
  Citations

• 1-eV solar cells with GaInNAs active layer

  D.J. Friedman;J.F. Geisz;S.R. Kurtz;J.M. Olson

  490
  Citations

• A 45nm CMOS neuromorphic chip with a scalable architecture for learning in networks of spiking neurons

  Jae-sun Seo;Bernard Brezzo;Yong Liu;Benjamin D. Parker

  449
  Citations

• 29.5%‐efficient GaInP/GaAs tandem solar cells

  K. A. Bertness;Sarah R. Kurtz;D. J. Friedman;A. E. Kibbler

  432
  Citations

• III-N-V semiconductors for solar photovoltaic applications

  J F Geisz;D J Friedman

  423
  Citations

• Nitrogen-Activated Transitions, Level Repulsion, and Band Gap Reduction in GaAs 1-x N x with x < 0.03

  J. D. Perkins;A. Mascarenhas;Yong Zhang;J. F. Geisz

  380
  Citations

• Photocurrent of 1 eV GaInNAs lattice-matched to GaAs

  J.F. Geisz;D.J. Friedman;J.M. Olson;S.R. Kurtz

  361
  Citations

• On transition in a pipe. Part 2. The equilibrium puff

  Israel J Wygnanski;M. Sokolov;D. Friedman

  338
  Citations

• Optical enhancement of the open-circuit voltage in high quality GaAs solar cells

  M. A. Steiner;J. F. Geisz;I. García;D. J. Friedman

  332
  Citations

• Enhanced external radiative efficiency for 20.8 efficient single-junction GaInP solar cells

  J. F. Geisz;M. A. Steiner;I. García;S. R. Kurtz

  331
  Citations

• A 10-Gb/s 5-Tap DFE/4-Tap FFE Transceiver in 90-nm CMOS Technology

  J.F. Bulzacchelli;M. Meghelli;S.V. Rylov;W. Rhee

  319
  Citations

• Structural changes during annealing of GaInAsN

  Sarah Kurtz;J. Webb;L. Gedvilas;D. Friedman

  303
  Citations

• Thermophotovoltaic Efficiency of 40

  Alina LaPotin;Kevin L. Schulte;Myles A. Steiner;Kyle Buznitsky

  293
  Citations

• 7.2 A 28GHz 32-element phased-array transceiver IC with concurrent dual polarized beams and 1.4 degree beam-steering resolution for 5G communication

  Bodhisatwa Sadhu;Yahya Tousi;Joakim Hallin;Stefan Sahl

  275
  Citations

• Dilute nitride GaInNAs and GaInNAsSb solar cells by molecular beam epitaxy

  David B. Jackrel;Seth Robert Bank;Homan B. Yuen;Mark A. Wistey

  258
  Citations

• A Wide Power Supply Range, Wide Tuning Range, All Static CMOS All Digital PLL in 65 nm SOI

  J.A. Tierno;A.V. Rylyakov;D.J. Friedman

  251
  Citations

• A 28-Gb/s 4-Tap FFE/15-Tap DFE Serial Link Transceiver in 32-nm SOI CMOS Technology

  J. F. Bulzacchelli;C. Menolfi;T. J. Beukema;D. W. Storaska

  237
  Citations