Daniel Friedman

Daniel Friedman publication distribution in Engineering and Technology in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Engineering and Technology in 2026. The highlighted bar marks where Daniel Friedman sits on this spectrum.

Daniel Friedman D-index placement in Engineering and Technology in 2026

The chart shows the D-index (discipline H-index) distribution of Engineering and Technology scientists ranked by Research.com in 2026. The highlighted bar marks where Daniel Friedman sits on this spectrum.

Best Publications

• Band Anticrossing in GaInNAs Alloys

  W. Shan;W. Walukiewicz;J. W. Ager;E. E. Haller

  2068
  Citations

• 40.8% efficient inverted triple-junction solar cell with two independently metamorphic junctions

  J. F. Geisz;D. J. Friedman;J. S. Ward;A. Duda

  629
  Citations

• High-efficiency GaInP∕GaAs∕InGaAs triple-junction solar cells grown inverted with a metamorphic bottom junction

  J. F. Geisz;Sarah Kurtz;M. W. Wanlass;J. S. Ward

  622
  Citations

• A 28-GHz 32-Element TRX Phased-Array IC With Concurrent Dual-Polarized Operation and Orthogonal Phase and Gain Control for 5G Communications

  Bodhisatwa Sadhu;Yahya Tousi;Joakim Hallin;Stefan Sahl

  568
  Citations

• 1-eV solar cells with GaInNAs active layer

  D.J. Friedman;J.F. Geisz;S.R. Kurtz;J.M. Olson

  490
  Citations

• A 45nm CMOS neuromorphic chip with a scalable architecture for learning in networks of spiking neurons

  Jae-sun Seo;Bernard Brezzo;Yong Liu;Benjamin D. Parker

  449
  Citations

• 29.5%‐efficient GaInP/GaAs tandem solar cells

  K. A. Bertness;Sarah R. Kurtz;D. J. Friedman;A. E. Kibbler

  432
  Citations

• III-N-V semiconductors for solar photovoltaic applications

  J F Geisz;D J Friedman

  423
  Citations

• Nitrogen-Activated Transitions, Level Repulsion, and Band Gap Reduction in GaAs 1-x N x with x < 0.03

  J. D. Perkins;A. Mascarenhas;Yong Zhang;J. F. Geisz

  380
  Citations

• Photocurrent of 1 eV GaInNAs lattice-matched to GaAs

  J.F. Geisz;D.J. Friedman;J.M. Olson;S.R. Kurtz

  361
  Citations

• On transition in a pipe. Part 2. The equilibrium puff

  Israel J Wygnanski;M. Sokolov;D. Friedman

  338
  Citations

• Optical enhancement of the open-circuit voltage in high quality GaAs solar cells

  M. A. Steiner;J. F. Geisz;I. García;D. J. Friedman

  332
  Citations

• Enhanced external radiative efficiency for 20.8 efficient single-junction GaInP solar cells

  J. F. Geisz;M. A. Steiner;I. García;S. R. Kurtz

  331
  Citations

• A 10-Gb/s 5-Tap DFE/4-Tap FFE Transceiver in 90-nm CMOS Technology

  J.F. Bulzacchelli;M. Meghelli;S.V. Rylov;W. Rhee

  319
  Citations

• Structural changes during annealing of GaInAsN

  Sarah Kurtz;J. Webb;L. Gedvilas;D. Friedman

  303
  Citations

• Thermophotovoltaic Efficiency of 40

  Alina LaPotin;Kevin L. Schulte;Myles A. Steiner;Kyle Buznitsky

  293
  Citations

• 7.2 A 28GHz 32-element phased-array transceiver IC with concurrent dual polarized beams and 1.4 degree beam-steering resolution for 5G communication

  Bodhisatwa Sadhu;Yahya Tousi;Joakim Hallin;Stefan Sahl

  275
  Citations

• Dilute nitride GaInNAs and GaInNAsSb solar cells by molecular beam epitaxy

  David B. Jackrel;Seth Robert Bank;Homan B. Yuen;Mark A. Wistey

  258
  Citations

• A Wide Power Supply Range, Wide Tuning Range, All Static CMOS All Digital PLL in 65 nm SOI

  J.A. Tierno;A.V. Rylyakov;D.J. Friedman

  251
  Citations

• A 28-Gb/s 4-Tap FFE/15-Tap DFE Serial Link Transceiver in 32-nm SOI CMOS Technology

  J. F. Bulzacchelli;C. Menolfi;T. J. Beukema;D. W. Storaska

  237
  Citations