World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
76
Citations
22760
World Ranking
3249
National Ranking
1040

Chong-an Di publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Chong-an Di sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 194 publications — 28th percentile

28% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Chong-an Di D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Chong-an Di sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 76 D-Index — 75th percentile

75% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Chong-an Di is affiliated with the Chinese Academy of Sciences in China and has a substantial research output focused on engineering and materials science. Their work primarily intersects the fields of electrical and electronic engineering and polymers and plastics, with substantial contributions also in materials chemistry and biomedical engineering.

The main topics of Chong-an Di's research include:

  • Conducting polymers and applications
  • Advanced thermoelectric materials and devices
  • Organic electronics and photovoltaics
  • Advanced sensor and energy harvesting materials
  • Advanced memory and neural computing
  • Perovskite materials and applications
  • Thermal properties of materials

Frequent co-authors collaborating with Chong-an Di are:

  • Daoben Zhu
  • Liyao Liu
  • Ye Zou
  • Fengjiao Zhang
  • Xiaojuan Dai

Chong-an Di publishes often in these venues:

  • Advanced Materials
  • Chinese Chemical Letters
  • Nature Communications
  • Angewandte Chemie International Edition
  • Angewandte Chemie

Recent papers include the following works:

  • Technology Roadmap for Flexible Sensors, 2023, ACS Nano
  • Chemical doping of organic semiconductors for thermoelectric applications, 2020, Chemical Society Reviews
  • Conducting polymer-based flexible thermoelectric materials and devices: From mechanisms to applications, 2021, Progress in Materials Science
  • A thermally activated and highly miscible dopant for n-type organic thermoelectrics, 2020, Nature Communications
  • An organic transistor with light intensity-dependent active photoadaptation, 2021, Nature Electronics

Best Publications

  • Advances of flexible pressure sensors toward artificial intelligence and health care applications

    Yaping Zang;Fengjiao Zhang;Chong-an Di;Daoben Zhu

  • A two-dimensional π–d conjugated coordination polymer with extremely high electrical conductivity and ambipolar transport behaviour

    Xing Huang;Peng Sheng;Zeyi Tu;Fengjiao Zhang

  • A stable solution-processed polymer semiconductor with record high-mobility for printed transistors

    Jun Li;Yan Zhao;Huei Shuan Tan;Yunlong Guo

  • Flexible and self-powered temperature–pressure dual-parameter sensors using microstructure-frame-supported organic thermoelectric materials

    Fengjiao Zhang;Yaping Zang;Dazhen Huang;Chong-an Di

  • Organic Thermoelectric Materials and Devices Based on p‐ and n‐Type Poly(metal 1,1,2,2‐ethenetetrathiolate)s

    Yimeng Sun;Peng Sheng;Chongan Di;Fei Jiao

  • Flexible suspended gate organic thin-film transistors for ultra-sensitive pressure detection

    Yaping Zang;Fengjiao Zhang;Dazhen Huang;Xike Gao

  • Patterned Graphene as Source/Drain Electrodes for Bottom-Contact Organic Field-Effect Transistors†

    Chong-an Di;Dacheng Wei;Gui Yu;Yunqi Liu

  • Critical Role of Alkyl Chain Branching of Organic Semiconductors in Enabling Solution-Processed N-Channel Organic Thin-Film Transistors with Mobility of up to 3.50 cm2 V–1 s–1

    Fengjiao Zhang;Yunbin Hu;Torben Schuettfort;Chong-an Di

  • Toward High Performance n-Type Thermoelectric Materials by Rational Modification of BDPPV Backbones

    Ke Shi;Fengjiao Zhang;Chong-An Di;Tian-Wei Yan

  • Core-expanded naphthalene diimides fused with 2-(1,3-dithiol-2-ylidene)malonitrile groups for high-performance, ambient-stable, solution-processed n-channel organic thin film transistors.

    Xike Gao;Chong-an Di;Yunbin Hu;Xiaodi Yang

  • Fluorescence enhancements of benzene-cored luminophors by restricted intramolecular rotations: AIE and AIEE effects.

    Qi Zeng;Zhen Li;Yongqiang Dong;Chong'an Di

  • Interface engineering: an effective approach toward high-performance organic field-effect transistors.

    Chong-an Di;Yunqi Liu;Gui Yu;Daoben Zhu

  • Chemical doping of organic semiconductors for thermoelectric applications.

    Wenrui Zhao;Jiamin Ding;Ye Zou;Chong-an Di

  • Multi-functional integration of organic field-effect transistors (OFETs): advances and perspectives.

    Chong-an Di;Fengjiao Zhang;Daoben Zhu

  • Conducting polymer-based flexible thermoelectric materials and devices: From mechanisms to applications

    Shengduo Xu;Xiao-Lei Shi;Matthew Dargusch;Chongan Di

  • Ultrathin Film Organic Transistors: Precise Control of Semiconductor Thickness via Spin-Coating

    Fengjiao Zhang;Chong-an Di;Nikolai Berdunov;Yuanyuan Hu

  • Conjugated-Backbone Effect of Organic Small Molecules for n-Type Thermoelectric Materials with ZT over 0.2

    Dazhen Huang;Huiying Yao;Yutao Cui;Ye Zou

  • A Dual-Organic-Transistor-Based Tactile-Perception System with Signal-Processing Functionality.

    Yaping Zang;Hongguang Shen;Dazhen Huang;Chong-An Di

  • A Cyclic Triphenylamine Dimer for Organic Field-Effect Transistors with High Performance

    Yabin Song;Chong'an Di;Xiaodi Yang;Shouping Li

  • Flexible n-Type High-Performance Thermoelectric Thin Films of Poly(nickel-ethylenetetrathiolate) Prepared by an Electrochemical Method.

    Yuanhui Sun;Lin Qiu;Liangpo Tang;Hua Geng

  • 2D Semiconducting Metal-Organic Framework Thin Films for Organic Spin Valves.

    Xiaoyu Song;Xinyue Wang;Yusen Li;Chengzhi Zheng

  • Core-Expanded Naphthalene Diimides Fused with Sulfur Heterocycles and End-Capped with Electron-Withdrawing Groups for Air-Stable Solution-Processed n-Channel Organic Thin Film Transistors

    Yunbin Hu;Xike Gao;Chong-an Di;Xiaodi Yang

Frequent Co-Authors

Daoben Zhu
Daoben Zhu Chinese Academy of Sciences
Yunqi Liu
Yunqi Liu Fudan University
Gui Yu
Gui Yu Chinese Academy of Sciences
Yunlong Guo
Yunlong Guo University of Tokyo
Xike Gao
Xike Gao Chinese Academy of Sciences
Wenping Hu
Wenping Hu Tianjin University
Yanming Sun
Yanming Sun Beihang University
Lei Zhang
Lei Zhang Hong Kong Polytechnic University
Lei Zhang
Lei Zhang Nanjing University
Christopher R. McNeill
Christopher R. McNeill Monash University

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