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Torsten Fritz publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Torsten Fritz sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 724 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 478 scientists 350–369 publications: 441 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 257 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

The last bar groups every scientist with 1,163 publications or more.

Torsten Fritz D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Torsten Fritz sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 451 scientists 44–45 D-Index: 613 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 204 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 118 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

The last bar groups every scientist with 165 D-Index or more.

Overview

Torsten Fritz is affiliated with Friedrich Schiller University Jena in Germany. Their research activity predominantly spans the fields of Materials Science and Engineering, with significant contributions in subfields such as Materials Chemistry, Electrical and Electronic Engineering, Atomic and Molecular Physics and Optics, Biomedical Engineering, and Organic Chemistry.

The research topics frequently explored by Torsten Fritz include:

  • Molecular Junctions and Nanostructures
  • Graphene research and applications
  • Semiconductor materials and devices
  • 2D Materials and Applications
  • Surface Chemistry and Catalysis
  • Surface and Thin Film Phenomena
  • Organic Electronics and Photovoltaics

Among recent publications, several notable papers are:

  • Influence of Substrate Materials on Nucleation and Properties of Iridium Thin Films Grown by ALD (2021) published in Coatings
  • Why Organic Electronic Devices Comprising PEDOT:PSS Electrodes Should be Fabricated on Metal Free Substrates (2021) published in ACS Applied Electronic Materials
  • Influence of temperature and plasma parameters on the properties of PEALD HfO2 (2021) published in Optical Materials Express
  • Nonintuitive Surface Self-Assembly of Functionalized Molecules on Ag(111) (2021) published in ACS Nano
  • Optical bandgap control in Al2O3/TiO2 heterostructures by plasma enhanced atomic layer deposition: Toward quantizing structures and tailored binary oxides (2021) published in Spectrochimica Acta Part A Molecular and Biomolecular Spectroscopy

Frequent co-authors who collaborated with Torsten Fritz include:

  • Félix Otto
  • Roman Forker
  • Marco Gruenewald
  • Maximilian Schaal
  • Jari Domke

The venues where Torsten Fritz has most frequently published encompass:

  • The Journal of Physical Chemistry C
  • arXiv (Cornell University)
  • Acta Crystallographica Section A Foundations and Advances
  • Coatings
  • ACS Applied Materials & Interfaces

Best Publications

  • LOW VOLTAGE ORGANIC LIGHT EMITTING DIODES FEATURING DOPED PHTHALOCYANINE AS HOLE TRANSPORT MATERIAL

    J. Blochwitz;M. Pfeiffer;T. Fritz;K. Leo

  • Epitaxy and Molecular Organization on Solid Substrates

    Daniel E. Hooks;Torsten Fritz;Michael D. Ward

  • Very-low-operating-voltage organic light-emitting diodes using a p-doped amorphous hole injection layer

    X. Zhou;M. Pfeiffer;J. Blochwitz;A. Werner

  • Controlled doping of phthalocyanine layers by cosublimation with acceptor molecules: A systematic Seebeck and conductivity study

    M. Pfeiffer;A. Beyer;T. Fritz;K. Leo

  • Interface electronic structure of organic semiconductors with controlled doping levels

    J. Blochwitz;T. Fritz;M. Pfeiffer;K. Leo

  • The lowest energy Frenkel and charge-transfer excitons in quasi-one-dimensional structures: application to MePTCDI and PTCDA crystals

    Michael Hoffmann;Karin Schmidt;Torsten Fritz;Tom Hasche

  • Controlled n-type doping of a molecular organic semiconductor: Naphthalenetetracarboxylic dianhydride (NTCDA) doped with bis(ethylenedithio)-tetrathiafulvalene (BEDT-TTF)

    A. Nollau;M. Pfeiffer;T. Fritz;K. Leo

  • Enhanced Hole Injection into Amorphous Hole-Transport Layers of Organic Light-Emitting Diodes Using Controlled p-Type Doping

    X. Zhou;J. Blochwitz;M. Pfeiffer;A. Nollau

  • Pyronin B as a donor for n-type doping of organic thin films

    A. G. Werner;F. Li;K. Harada;M. Pfeiffer

  • Optimized UV protecting coatings by combination of organic and inorganic UV absorbers

    B. Mahltig;H. Böttcher;K. Rauch;U. Dieckmann

  • Epitaxial growth of 3,4,9,10-perylene-tetracarboxylic-dianhydride on Au(111): A STM and RHEED study

    T. Schmitz-Hübsch;T. Fritz;F. Sellam;R. Staub

  • Doped semiconductor material and process for production thereof

    Martin Pfeiffer;Leo Karl;Ansgar Werner;Torsten Fritz

  • Controlled p-doping of pigment layers by cosublimation: Basic mechanisms and implications for their use in organic photovoltaic cells

    M Pfeiffer;A Beyer;B Plönnigs;A Nollau

  • n-Type Doping of Organic Thin Films Using Cationic Dyes

    A. Werner;F. Li;K. Harada;M. Pfeiffer

  • Growth‐Mode‐Induced Narrowing of Optical Spectra of an Organic Adlayer

    Thomas Dienel;Christian Loppacher;Stefan C. B. Mannsfeld;Roman Forker

  • Formation of Solid-State Excitons in Ultrathin Crystalline Films of PTCDA: From Single Molecules to Molecular Stacks

    Holger Proehl;Thomas Dienel;Robert Nitsche;Torsten Fritz

  • Line-on-Line Coincidence: A New Type of Epitaxy Found in Organic-Organic Heterolayers

    Stefan C. B. Mannsfeld;Karl Leo;Torsten Fritz

  • Ultrathin Films of Perylenedianhydride and Perylenebis(dicarboximide) Dyes on (001) Alkali Halide Surfaces

    D. Schlettwein;A. Back;B. Schilling;T. Fritz

  • Flat Lying Pin-Stripe Phase of Decanethiol Self-Assembled Monolayers on Au(111)

    R. Staub;M. Toerker;T. Fritz;T. Schmitz-Hübsch

  • In situ differential reflectance spectroscopy of thin crystalline films of PTCDA on different substrates

    Holger Proehl;Robert Nitsche;Thomas Dienel;Karl Leo

Frequent Co-Authors

Karl Leo
Karl Leo TU Dresden
Klaus Müllen
Klaus Müllen Max Planck Institute for Polymer Research
Michael J. Hoffmann
Michael J. Hoffmann Karlsruhe Institute of Technology
Neal R. Armstrong
Neal R. Armstrong University of Arizona
Egbert Zojer
Egbert Zojer Graz University of Technology
Andrey Turchanin
Andrey Turchanin Friedrich Schiller University Jena
Roland Resel
Roland Resel Graz University of Technology

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