World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
78
Citations
21402
World Ranking
2982
National Ranking
837

Chemistry

D-Index
78
Citations
21433
World Ranking
3806
National Ranking
1219

Neal R. Armstrong publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Neal R. Armstrong sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 362 publications — 72nd percentile

72% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Neal R. Armstrong D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Neal R. Armstrong sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 78 D-Index — 77th percentile

77% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Neal R. Armstrong is affiliated with the University of Arizona in the United States. Their research primarily centers on engineering and materials science, with a focus on electrical and electronic engineering as well as materials chemistry. These fields underpin Armstrong's exploration into advanced materials and their practical applications.

The main topics Armstrong addresses include perovskite materials and applications, chalcogenide semiconductor thin films, and quantum dots synthesis and properties. Additionally, the scientist's work covers electronic and structural properties of oxides, conducting polymers and their applications, electrochemical analysis, and advanced battery technologies research.

Armstrong has contributed to several recent papers, documenting developments in material interfaces, surface passivation techniques, and quantum dot behavior. Notable publications include:

  • "Overcoming Redox Reactions at Perovskite-Nickel Oxide Interfaces to Boost Voltages in Perovskite Solar Cells" (2020, Joule)
  • "Reducing Surface Recombination Velocity of Methylammonium-Free Mixed-Cation Mixed-Halide Perovskites via Surface Passivation" (2021, Chemistry of Materials)
  • "Influence of the Processing Environment on the Surface Composition and Electronic Structure of Size-Quantized CdSe Quantum Dots" (2020, The Journal of Physical Chemistry C)
  • "Defect quantification in metal halide perovskites: the solid-state electrochemical alternative" (2021, Energy & Environmental Science)
  • "Extremely Long-Lived Charge Donor States Formed by Visible Irradiation of Quantum Dots" (2024, ACS Nano)

The scientist publishes frequently in venues such as ACS Energy Letters, The Journal of Physical Chemistry C, Chemistry of Materials, arXiv (Cornell University), and Joule. These journals reflect the breadth and interdisciplinary nature of Armstrong's work in chemistry, physics, and engineering.

Collaboration is a significant aspect of Armstrong's research activities. Frequent co-authors include Erin L. Ratcliff, Michel De Keersmaecker, R. Clayton Shallcross, Joseph J. Berry, and Margherita Taddei. These partnerships have contributed to an active and sustained research output.

Best Publications

  • Characterization of Indium−Tin Oxide Interfaces Using X-ray Photoelectron Spectroscopy and Redox Processes of a Chemisorbed Probe Molecule: Effect of Surface Pretreatment Conditions

    Carrie Donley;Darren Dunphy;David Paine;Chet Carter

  • Overcoming Redox Reactions at Perovskite-Nickel Oxide Interfaces to Boost Voltages in Perovskite Solar Cells

    Caleb C. Boyd;Caleb C. Boyd;Caleb C. Boyd;R. Clayton Shallcross;Taylor Moot;Ross Kerner

  • Interface Dipoles Arising from Self-Assembled Monolayers on Gold: UV−Photoemission Studies of Alkanethiols and Partially Fluorinated Alkanethiols

    Dana M. Alloway;Michael Hofmann;Michael Hofmann;Darrin L. Smith;Nadine E. Gruhn

  • Evidence for near-Surface NiOOH Species in Solution-Processed NiOx Selective Interlayer Materials: Impact on Energetics and the Performance of Polymer Bulk Heterojunction Photovoltaics

    Erin L. Ratcliff;Jens Meyer;K. Xerxes Steirer;Andres Garcia

  • The Modification of Indium Tin Oxide with Phosphonic Acids: Mechanism of Binding, Tuning of Surface Properties, and Potential for Use in Organic Electronic Applications

    Peter J. Hotchkiss;Simon C. Jones;Sergio A. Paniagua;Asha Sharma

  • Aluminum based cathode structure for enhanced electron injection in electroluminescent organic devices

    G. E. Jabbour;B. Kippelen;N. R. Armstrong;N. Peyghambarian

  • Selective Interlayers and Contacts in Organic Photovoltaic Cells

    Erin L. Ratcliff;Brian Zacher;Neal R. Armstrong

  • Bright blue organic light-emitting diode with improved color purity using a LiF/Al cathode

    S. E. Shaheen;G. E. Jabbour;M. M. Morrell;Y. Kawabe

  • Enhanced Efficiency in Plastic Solar Cells via Energy Matched Solution Processed NiOx Interlayers

    K. Xerxes Steirer;K. Xerxes Steirer;Paul F. Ndione;N. Edwin Widjonarko;Matthew T. Lloyd

  • Interface electronic structure of organic semiconductors with controlled doping levels

    J. Blochwitz;T. Fritz;M. Pfeiffer;K. Leo

  • Indium Tin Oxide Alternatives—High Work Function Transparent Conducting Oxides as Anodes for Organic Light‐Emitting Diodes

    J. Cui;A. Wang;N. L. Edleman;J. Ni

  • High-performance hole-transport layers for polymer light-emitting diodes. Implementation of organosiloxane cross-linking chemistry in polymeric electroluminescent devices.

    He Yan;Paul Lee;Neal R. Armstrong;Amy Graham

  • X-ray photoelectron/Auger electron spectroscopic studies of tin and indium metal foils and oxides

    Albert W. C. Lin;Neal R. Armstrong;Theodore. Kuwana

  • Phosphonic Acid Modification of Indium−Tin Oxide Electrodes: Combined XPS/UPS/Contact Angle Studies†

    Sergio A. Paniagua;Peter J. Hotchkiss;Simon C. Jones;Seth R. Marder

  • Phosphonic Acids for Interfacial Engineering of Transparent Conductive Oxides

    Sergio A. Paniagua;Anthony J. Giordano;O'Neil L. Smith;Stephen Barlow

  • Substituted aluminum and zinc quinolates with blue-shifted absorbance/luminescence bands: Synthesis and spectroscopic, photoluminescence, and electroluminescence characterization

    T. A. Hopkins;K. Meerholz;S. Shaheen;M. L. Anderson

  • Interface modification of ITO thin films: organic photovoltaic cells

    Neal R Armstrong;Chet Carter;Carrie Donley;Adam Simmonds

  • X-ray photoelectron spectroscopy of TiO2 and other titanate electrodes and various standard Titanium oxide materials: Surface compositional changes of the TiO2 electrode during photoelectrolysis

    Curt N. Sayers;Neal R. Armstrong

  • Electrochemistry and Electrogenerated Chemiluminescence Processes of the Components of Aluminum Quinolate/Triarylamine, and Related Organic Light-Emitting Diodes

    J. D. Anderson;E. M. McDonald;P. A. Lee;M. L. Anderson

  • Organic/Organic' heterojunctions: organic light emitting diodes and organic photovoltaic devices

    Neal R. Armstrong;Weining Wang;Dana M. Alloway;Diogenes Placencia

  • Liquid-crystal approaches to organic photovoltaics

    Bernard Kippelen;Seunghyup Yoo;Joshua A. Haddock;Benoit Domercq

Frequent Co-Authors

S. Scott Saavedra
S. Scott Saavedra University of Arizona
Bernard Kippelen
Bernard Kippelen Georgia Institute of Technology
Seth R. Marder
Seth R. Marder University of Colorado Boulder
Nasser Peyghambarian
Nasser Peyghambarian University of Arizona
Bruce A. Parkinson
Bruce A. Parkinson University of Wyoming
Ghassan E. Jabbour
Ghassan E. Jabbour University of Ottawa
David F. O'Brien
David F. O'Brien University of Arizona
Sean E. Shaheen
Sean E. Shaheen University of Colorado Boulder
Tobin J. Marks
Tobin J. Marks Northwestern University
Jeffrey Pyun
Jeffrey Pyun University of Arizona

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