Ph. Roussel

Best Publications

• New insights in the relation between electron trap generation and the statistical properties of oxide breakdown

  R. Degraeve;G. Groeseneken;R. Bellens;J.L. Ogier

  769
  Citations

• Origin of NBTI variability in deeply scaled pFETs

  B. Kaczer;T. Grasser;Ph. J. Roussel;J. Franco

  374
  Citations

• Comphy — A compact-physics framework for unified modeling of BTI

  Gerhard Rzepa;Jacopo Franco;Barry J. O'Sullivan;A. Subirats

  201
  Citations

• Atomistic approach to variability of bias-temperature instability in circuit simulations

  B. Kaczer;S. Mahato;V. Valduga de Almeida Camargo;M. Toledano-Luque

  175
  Citations

• A new model for the field dependence of intrinsic and extrinsic time-dependent dielectric breakdown

  R. Degraeve;J.L. Ogier;R. Bellens;P.J. Roussel

  160
  Citations

• Statistics of Multiple Trapped Charges in the Gate Oxide of Deeply Scaled MOSFET Devices—Application to NBTI

  B Kaczer;Ph J Roussel;T Grasser;G Groeseneken

  143
  Citations

• Recent advances in understanding the bias temperature instability

  T. Grasser;B. Kaczer;W. Goes;H. Reisinger

  135
  Citations

• NBTI from the perspective of defect states with widely distributed time scales

  B. Kaczer;T. Grasser;J. Martin-Martinez;E. Simoen

  132
  Citations

• From mean values to distributions of BTI lifetime of deeply scaled FETs through atomistic understanding of the degradation

  M. Toledano-Luque;B. Kaczer;J. Franco;Ph.J. Roussel

  122
  Citations

• Impact of single charged gate oxide defects on the performance and scaling of nanoscaled FETs

  J. Franco;B. Kaczer;M. Toledano-Luque;Ph. J. Roussel

  120
  Citations

• Dynamic ‘hour glass’ model for SET and RESET in HfO 2 RRAM

  R. Degraeve;A. Fantini;S. Clima;B. Govoreanu

  116
  Citations

• Charge trapping and dielectric reliability of SiO/sub 2/-Al/sub 2/O/sub 3/ gate stacks with TiN electrodes

  A. Kerber;E. Cartier;R. Degraeve;P.J. Roussel

  102
  Citations

• Response of a single trap to AC negative Bias Temperature stress

  M. Toledano-Luque;B. Kaczer;Ph.J. Roussel;T. Grasser

  87
  Citations

• Degradation and breakdown of 0.9 nm EOT SiO/sub 2/ ALD HfO/sub 2/metal gate stacks under positive constant voltage stress

  R. Degraeve;T. Kauerauf;M. Cho;M. Zahid

  83
  Citations

• Review of reliability issues in high-k/metal gate stacks

  R. Degraeve;M. Aoulaiche;B. Kaczer;P. Roussel

  80
  Citations

• Generic learning of TDDB applied to RRAM for improved understanding of conduction and switching mechanism through multiple filaments

  R. Degraeve;Ph. Roussel;L. Goux;D. Wouters

  75
  Citations

• Study of Nano-Porous Silicon with Low Thermal Conductivity as Thermal Insulating Material

  V. Lysenko;Ph. Roussel;B. Remaki;G. Delhomme

  72
  Citations

• Defect-based methodology for workload-dependent circuit lifetime projections - Application to SRAM

  P. Weckx;B. Kaczer;M. Toledano-Luque;T. Grasser

  71
  Citations

• Understanding the suppressed charge trapping in relaxed- and strained-Ge/SiO 2 /HfO 2 pMOSFETs and implications for the screening of alternative high-mobility substrate/dielectric CMOS gate stacks

  J. Franco;B. Kaczer;Ph J. Roussel;J. Mitard

  68
  Citations

• Gate oxide breakdown in FET devices and circuits: From nanoscale physics to system-level reliability

  Ben Kaczer;Robin Degraeve;Philippe Roussel;Guido Groeseneken

  67
  Citations