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International Journal of High Speed Electronics and Systems
H-index 3

International Journal of High Speed Electronics and Systems

0129-1564

Published by: World Scientific

https://www.worldscientific.com/worldscinet/ijhses

Ranking & Metrics

Discipline name Position Best Scientists Publications D-Index
Electronics and Electrical Engineering 501 13 26 3

Additional Metrics

Number of Best Scientists*: 25
Documents by Best Scientists*: 39
Top 100 Ranked Scientists*: 1
SCIMAGO H-index: 28
SCIMAGO SJR: 0.125
Impact Factor: N/A

Overview

Top Research Topics at International Journal of High Speed Electronics and Systems?

The journal aims to foster the development of research in Optoelectronics, Electronic engineering, Electrical engineering, Optics and Transistor. The Optoelectronics works featured in International Journal of High Speed Electronics and Systems incorporate elements from Quantum well and Laser. Laser research presented is mostly focused on the subject of Semiconductor laser theory.

While Electronic engineering is the focus of it, it also provided insights into the studies of Power (physics) and Electronic circuit. As a part of International Journal of High Speed Electronics and Systems, discussions in Electrical engineering involve topics like Integrated circuit, Heterojunction bipolar transistor, MOSFET, Circuit design and Voltage. The presentations focused mostly on Heterojunction bipolar transistor in an attempt to further explore topics in Bipolar junction transistor.

The journal features studies on Optics, including topics such as Wavelength. The main emphasis of International Journal of High Speed Electronics and Systems is the research on Transistor, emphasizing the topic of Field-effect transistor. International Journal of High Speed Electronics and Systems connects the study in Terahertz radiation with the closely related area of Detector.

  • Optoelectronics (40.29%)
  • Electronic engineering (24.56%)
  • Electrical engineering (20.78%)

What are the most cited papers published in the journal?

  • QUANTUM WELL OPTOELECTRONIC SWITCHING DEVICES (138 citations)
  • COUPLING-OF-MODES ANALYSIS OF SAW DEVICES (132 citations)
  • RSFQ TECHNOLOGY: PHYSICS AND DEVICES (128 citations)

Research areas of the most cited articles at International Journal of High Speed Electronics and Systems:

The journal articles mainly tackle studies in Electronic engineering, Optoelectronics, Electrical engineering, Optics and Terahertz radiation. While work presented in the journal articles provide substantial information on Electronic engineering, it also covers topics in Silicon on insulator, Electronics, Demultiplexer and Integrated circuit. The journal publications facilitate discussions on Optoelectronics that incorporate concepts from other fields like Breakdown voltage, Voltage and Microwave.

What topics the last edition of the journal is best known for?

  • Quantum mechanics
  • Electron
  • Optics

The previous edition focused in particular on these issues:

International Journal of High Speed Electronics and Systems primarily tackles Optoelectronics, Quantum dot, Ingaas gaas, Electronic engineering and Bit (horse). The work tackled in International Journal of High Speed Electronics and Systems goes beyond the discipline of Optoelectronics as it also encompasses Communication channel. International Journal of High Speed Electronics and Systems focuses on Quantum dot but the discussions also offer insight into other areas such as Transistor and Non-volatile memory.

The Ingaas gaas research discussed in it can contribute to the expansion of the discourse in closely related subjects like

  • Threading dislocations which is related to area like Heterojunction, Condensed matter physics, Infrared and Getter,
  • Dislocation together with Semiconductor heterostructures.. Issues in Electronic engineering were discussed, taking into consideration concepts from other disciplines like Dram, Dynamic random-access memory and Field effect. The research on Bit (horse) featured in International Journal of High Speed Electronics and Systems combines topics in other fields like Power (physics), Analog-to-digital converter, Electronic circuit, Computer hardware and Reduction (complexity).

The most cited articles from the last journal are:

  • Additively Manufactured RF Devices for 5G, IoT, RFID, WSN, and Smart City Applications (1 citations)
  • Comparison of Buffer Layer Grading Approaches in InGaAs/GaAs (001) (0 citations)
  • A Zagging and Weaving Model for Dislocation Interactions in Heterostructures Containing Strain Reversals (0 citations)

Papers citation over time

A key indicator for each journal is its effectiveness in reaching other researchers with the papers published at that venue.

The chart below presents the interquartile range (first quartile 25%, median 50% and third quartile 75%) of the number of citations of articles over time.

The top authors publishing in International Journal of High Speed Electronics and Systems (based on the number of publications) are:

  • Michael Shur (52 papers) absent at the last edition,
  • Faquir C. Jain (37 papers) published 9 papers at the last edition, 5 more than at the previous edition,
  • Evan Heller (28 papers) published 7 papers at the last edition, 3 more than at the previous edition,
  • John A. Chandy (23 papers) published 7 papers at the last edition, 3 more than at the previous edition,
  • John E. Ayers (19 papers) published 4 papers at the last edition, 3 more than at the previous edition.

The overall trend for top authors publishing in this journal is outlined below. The chart shows the number of publications at each edition of the journal for top authors.

Only papers with recognized affiliations are considered

The top affiliations publishing in International Journal of High Speed Electronics and Systems (based on the number of publications) are:

  • Rensselaer Polytechnic Institute (83 papers) absent at the last edition,
  • University of Connecticut (73 papers) published 10 papers at the last edition, 2 more than at the previous edition,
  • University of California, Santa Barbara (32 papers) absent at the last edition,
  • United States Army Research Laboratory (31 papers) absent at the last edition,
  • Cornell University (22 papers) absent at the last edition.

The overall trend for top affiliations publishing in this journal is outlined below. The chart shows the number of publications at each edition of the journal for top affiliations.

Publication chance based on affiliation

The publication chance index shows the ratio of articles published by the best research institutions in the journal edition to all articles published within that journal. The best research institutions were selected based on the largest number of articles published during all editions of the journal.

The chart below presents the percentage ratio of articles from top institutions (based on their ranking of total papers).Top affiliations were grouped by their rank into the following tiers: top 1-10, top 11-20, top 21-50, and top 51+. Only articles with a recognized affiliation are considered.

During the most recent 2020 edition, 16.67% of publications had an unrecognized affiliation. Out of the publications with recognized affiliations, 73.33% were posted by at least one author from the top 10 institutions publishing in the journal. Another 0.00% included authors affiliated with research institutions from the top 11-20 affiliations. Institutions from the 21-50 range included 6.67% of all publications and 20.00% were from other institutions.

Returning Authors Index

A very common phenomenon observed among researchers publishing scientific articles is the intentional selection of journals they have already attended in the past. In particular, it is worth analyzing the case when the authors participate in the same journal from year to year.

The Returning Authors Index presented below illustrates the ratio of authors who participated in both a given as well as the previous edition of the journal in relation to all participants in a given year.

Returning Institution Index

The graph below shows the Returning Institution Index, illustrating the ratio of institutions that participated in both a given and the previous edition of the conference in relation to all affiliations present in a given year.

The experience to innovation index

Our experience to innovation index was created to show a cross-section of the experience level of authors publishing in a journal. The index includes the authors publishing at the last edition of a journal, grouped by total number of publications throughout their academic career (P) and the total number of citations of these publications ever received (C).

The group intervals were selected empirically to best show the diversity of the authors' experiences, their labels were selected as a convenience, not as judgment. The authors were divided into the following groups:

  • Novice - P < 5 or C < 25 (the number of publications less than 5 or the number of citations less than 25),
  • Competent - P < 10 or C < 100 (the number of publications less than 10 or the number of citations less than 100),
  • Experienced - P < 25 or C < 625 (the number of publications less than 25 or the number of citations less than 625),
  • Master - P < 50 or C < 2500 (the number of publications less than 50 or the number of citations less than 2500),
  • Star - P ≥ 50 and C ≥ 2500 (both the number of publications greater than 50 and the number of citations greater than 2500).

The chart below illustrates experience levels of first authors in cases of publications with multiple authors.

Top Publications

  • Opportunities and Challenges in MOCVD of eta-Ga2O3 for Power Electronic Devices

    M.A. Mastro;J.K. Hite;C.R. Eddy;M.J. Tadjer

    (2020)
    5 Citations
  • Novel Additive Manufacturing-Enabled RF Devices for 5G/mmWave, IoT, Smart Skins, and Wireless Sensing Applications

    (2022)
    4 Citations
  • Additively Manufactured RF Devices for 5G, IoT, RFID, WSN, and Smart City Applications

    Yepu Cui;Eui Min Jung;Ajibayo Adeyeye;Charles Lynch

    (2020)
    3 Citations
  • Mode-Locked Fiber Ring Laser Using Graphene Nanoparticles as Saturable Absorbers

    (2022)
    2 Citations
  • Enhancing Number of Bits Via Mini-Energy Band Transitions Using Si Quantum Dot Channel (QDC) and Ge Quantum Dot Gate (QDG) FETs and NVRAMs

    (2023)
    1 Citations
  • Sensing Using Terahertz Radiation

    (2024)
    1 Citations
  • Current-Driven Terahertz Oscillations in Diamond TeraFET

    (2024)
    1 Citations
  • Modeling of Enhancement Mode HEMT with Π-Gate Optimization for High Power Applications

    (2023)
    1 Citations
  • Next Generation RF Modules for 5G, IoT, AR/VR and RFID Applications

    (2023)
    1 Citations

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Best Scientists Contributing to This Journal