| Discipline name | Position | Best Scientists | Publications | D-Index |
|---|---|---|---|---|
| Electronics and Electrical Engineering | 134 | 176 | 291 | 25 |
| Materials Science | 376 | 112 | 148 | 18 |
The scientific interests tackled in IEEE Journal of the Electron Devices Society are Optoelectronics, Transistor, Logic gate, Voltage and Threshold voltage. While IEEE Journal of the Electron Devices Society focused on Optoelectronics, it was also able to explore topics like Field-effect transistor, Thin-film transistor and MOSFET. The journal facilitates discussions on Transistor that incorporate concepts from other fields like Gallium nitride, Electronic engineering and Condensed matter physics, Quantum tunnelling.
It focuses on Gallium nitride but the discussions also offer insight into other areas such as Wide-bandgap semiconductor and High-electron-mobility transistor. Capacitance and Silicon on insulator are some topics wherein Logic gate research discussed in it have an impact. IEEE Journal of the Electron Devices Society features Capacitance research that overlaps with concepts in Negative impedance converter.
It explores research in Silicon and the adjacent study of Doping.
The published articles mainly deal with areas of study such as Optoelectronics, Transistor, Logic gate, Electrical engineering and Field-effect transistor. The most cited papers with studies in Optoelectronics featured incorporate elements of Capacitance and Voltage. While Transistor is the focus of the published articles, it also provides insights into the studies of Electronic engineering, Doping, Graphene and Electronics.
IEEE Journal of the Electron Devices Society aims to foster the development of research in Optoelectronics, Transistor, Logic gate, Threshold voltage and MOSFET. The work on Optoelectronics tackled in the journal brings together disciplines like Layer (electronics), Thin-film transistor and Voltage. In IEEE Journal of the Electron Devices Society, Gallium nitride, Node (circuits), Integrated circuit, Wide-bandgap semiconductor and Electronic engineering are investigated in conjunction with one another to address concerns in Transistor research.
The concepts on Logic gate presented in it can also apply to other research fields, including Transconductance, Trench, Communication channel, Silicon on insulator and Inverter. The tackled Threshold voltage research is interrelated with Condensed matter physics which concerns subjects like Electric field. Discussions in IEEE Journal of the Electron Devices Society are anchored in the field of MOSFET but it branches out to cover the subject of interrelated disciplines, including
A key indicator for each journal is its effectiveness in reaching other researchers with the papers published at that venue.
The chart below presents the interquartile range (first quartile 25%, median 50% and third quartile 75%) of the number of citations of articles over time.
The top authors publishing in IEEE Journal of the Electron Devices Society (based on the number of publications) are:
The overall trend for top authors publishing in this journal is outlined below. The chart shows the number of publications at each edition of the journal for top authors.
Only papers with recognized affiliations are considered
The top affiliations publishing in IEEE Journal of the Electron Devices Society (based on the number of publications) are:
The overall trend for top affiliations publishing in this journal is outlined below. The chart shows the number of publications at each edition of the journal for top affiliations.
The publication chance index shows the ratio of articles published by the best research institutions in the journal edition to all articles published within that journal. The best research institutions were selected based on the largest number of articles published during all editions of the journal.
The chart below presents the percentage ratio of articles from top institutions (based on their ranking of total papers).Top affiliations were grouped by their rank into the following tiers: top 1-10, top 11-20, top 21-50, and top 51+. Only articles with a recognized affiliation are considered.
During the most recent 2021 edition, 22.64% of publications had an unrecognized affiliation. Out of the publications with recognized affiliations, 37.40% were posted by at least one author from the top 10 institutions publishing in the journal. Another 8.13% included authors affiliated with research institutions from the top 11-20 affiliations. Institutions from the 21-50 range included 14.63% of all publications and 39.84% were from other institutions.
A very common phenomenon observed among researchers publishing scientific articles is the intentional selection of journals they have already attended in the past. In particular, it is worth analyzing the case when the authors participate in the same journal from year to year.
The Returning Authors Index presented below illustrates the ratio of authors who participated in both a given as well as the previous edition of the journal in relation to all participants in a given year.
The graph below shows the Returning Institution Index, illustrating the ratio of institutions that participated in both a given and the previous edition of the conference in relation to all affiliations present in a given year.
Our experience to innovation index was created to show a cross-section of the experience level of authors publishing in a journal. The index includes the authors publishing at the last edition of a journal, grouped by total number of publications throughout their academic career (P) and the total number of citations of these publications ever received (C).
The group intervals were selected empirically to best show the diversity of the authors' experiences, their labels were selected as a convenience, not as judgment. The authors were divided into the following groups:
The chart below illustrates experience levels of first authors in cases of publications with multiple authors.
Fei Mo;Yusaku Tagawa;Chengji Jin;MinJu Ahn
(2020)P. A. ’T Hart;M. Babaie;Edoardo Charbon;Andrei Vladimirescu
(2020)P. A. T Hart;M. Babaie;Edoardo Charbon;Andrei Vladimirescu
(2020)Arnout Beckers;Farzan Jazaeri;Alexander Grill;Subramanian Narasimhamoorthy
(2020)Tommaso Zanotti;Francesco Maria Puglisi;Paolo Pavan
(2020)Bishnu Patra;Mohammadreza Mehrpoo;Andrea Ruffino;Fabio Sebastiano
(2020)Austin Hickman;Reet Chaudhuri;Lei Li;Kazuki Nomoto
(2021)Jun Okuno;Takafumi Kunihiro;Kenta Konishi;Monica Materano
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