Call for Papers
The 7th IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA 2024), will be held on October 25-27, 2024 in Hangzhou, China. This conference will be held in China to provide an international forum according to IEEE standard for the presentation and exchange of the latest technical achievements and cross-discipline fertilization of IC designs, technologies, and applications in our fast-changing society. This year’s theme is “Chiplet and Future IDM”. ICTA 2024 welcomes papers of new and innovative discoveries and designs on:
Topics include, but are not limited to, the following technical areas:
1. RF Circuits and Wireless Systems: Si-based RFIC building-block circuit, compound-semiconductor-based MMIC building-block circuit, LNA, PA, VCO, PLL, phase shifter, mixer, RF switch, balun, driver amplifier, transceiver, etc.
2. Analog and Mixed-Signal ICs: analog circuits including amplifiers, comparators, oscillators, filters, references, nonlinear analog circuits and digitally-assisted analog circuits; data converters including Nyquist-rate and oversampling ADC and DAC, etc.
3. Power Management ICs: Power management and control circuits; switched-mode power converter ICs using inductive, capacitive, and hybrid techniques; linear regulators; gate drivers; topologies for wide-bandgap devices; power and signal isolators; LED drivers, wireless power, and envelope supply modulators; energy harvesting circuits and systems.
4. Digital ICs and Memory: SoC, processor, FPGA, AI and deep-learning processor, DSP, NoC, memory, etc.
5. Wireline ICs: high-speed data link, optical transceiver, OEIC, SerDes, TIA, CDRs, equalizer, modulator, etc.
6. Sensor ICs: MEMS sensors, image sensors, physical sensors, chemical sensors, bio-sensors, smart and intelligent sensors, sensor interface, sensor technology and applications, etc.
7. Modeling, EDA and Testing: compact models and extraction techniques (silicon based), SPICE models and extraction techniques (non-silicon), modeling technique of GaN, SiC, ASM-HEMT, 2D-material-based devices, quantum devices, test structures design and model parameter extraction, RF calibration and reliable data acquisition, EDA, EM/TCAD simulation, co-simulation and verification technique, PDK validation, etc.
8. Device and Process Technologies: CMOS, FinFET, FD-SOI, BCD, SiGe, III-V, HEMT, HBT, 3rd generation materials, GaN, power electronics, SiC, GaO, junctionless device, negative capacitance device, MEMS, device characterization, device FAR, 3D integration, Chiplet, flash, OPT, MPT, SRAM, DRAM, 3D NAND, MRAM, RRAM, PCRAM, FeRAM, crossbar, DRAM+MCU, etc.
9. Packaging and Hybrid Integration: Chiplet, active antenna, EM field, filters, Hybrid MIC, MCM, SiP, SoP, TSV, flip chip assembly, wire bonding, anisotropic conductive film, interconnection technologies, multi-physics and multiscale EM computation/simulation, 3D integration, etc.
10. Emerging Semiconductor Materials and Devices: heterogeneous integration, III-V compounds, silicon photonics, optoelectronic device, 2D materials, green and implantable materials, neuromorphic device, device characterization, etc.
11. System and Applications: IC based module and system integration, automotive electronics, automotive radar, 5G systems, AI systems, IoTs, healthcare and biomedical systems, etc.
12. Intelligent Robots: robot kinematics/dynamics/control, system integration, AI in robotics, sensor/actuator, bio-inspired systems, robot perception, human robot interaction, and robot vision, etc.
