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2022 Silicon Nanoelectronics Workshop

2022 Silicon Nanoelectronics Workshop (SNW)

Name: IEEE Silicon Nanoelectronics Workshop
Start: 2022-06-11
End: 2022-06-12
Location: Hilton Hawaiian Village, Honolulu, Hawaii

Location: Hilton Hawaiian Village, Honolulu, Hawaii , United States

Conference dates: 6/11/2022 - 6/12/2022

Research H-index

Official website

Ranking & Metrics

Discipline name	Position	Best Scientists	Publications	D-Index
Materials Science	53	32	37	4
Electronics and Electrical Engineering	463	55	98	4

Call for Papers

General Information
The 2022 Silicon Nanoelectronics Workshop is a satellite workshop of the 2022 VLSI Symposium
on VLSI Technology and Circuits, sponsored by the IEEE Electron Devices Society. It will be held
on June 11-12, 2022 at the Hilton Hawaiian Village in Honolulu, Hawaii USA. This will be the
28th workshop in the annual series. Original papers on nanometer-scale devices and
technologies that utilize silicon or which are based on novel materials on silicon substrates are
welcome. NOTE: Depending on travel restrictions and budget, the event will be in hybrid or
virtual format.

Scope
 Nanometer-scale transistors, including those employing non-classical structures, novel
channel and source/drain materials, or non-thermal injection mechanism
 Junction and insulator materials and process technology for nanoelectronic devices
 Techniques for fabrication of nanostructures, including nanometer scale patterning
 Physics of nanoelectronic devices, e.g., quantum effects, non-equilibrium transport
 Modeling and simulation of nanoelectronic devices, e.g. including atomistic effects
 Nanoscale surface, interface, and heterojunction effects in devices
 Device scaling issues including doping fluctuations and atomic granularity
 Circuit design issues and novel circuit architectures
 Optoelectronics using silicon nanostructures
 Techniques targeting zero power electronics (self-supplying), including wireless sensors,
energy harvesting, steep slope devices, ultra-low power design and devices
 Devices for 3D and heterogeneous integration on Silicon, including Graphene, III-V devices,
CNT, spin-based devices, MEMS and NEMS, etc.
 Novel transistors based on two dimensional materials, e.g., MoS2, WS2, etc.
 Novel non-volatile memories, e.g., MRAM, RRAM, PCM, FeRAM etc.
 Neuromorphic devices and architectures for AI
 Integrated energy harvesting and energy storage based on new material and structures
 Reliability and Characterization of nanoelectronic devices
 Environmental devices which contribute to low-carbon society (wireless sensors,
energy harvesters, steep slope devices, etc.)
 Power devices (SiC, GaN etc.)
 Silicon and Non-silicon quantum devices and low temperature electronics

Overview

The scientific conference ranking presented on this page offers a comprehensive evaluation of events in the field of Materials Science. This ranking has been meticulously developed by Research.com, recognized as one of the leading platforms for science research across all major disciplines, including Materials Science, and has been providing reliable data on scientific achievements since 2014.

The positions within this ranking are determined by a unique bibliometric score devised by Research.com. This score is calculated using the estimated h-index, combined with the number of leading scientists who have participated in each conference over the preceding three years. Such a multifactorial approach ensures that the ranking reflects both the enduring impact and the current influence of each scientific meeting.

Impact Score values incorporated in this ranking were collected as of 2024-11-27, ensuring timely and relevant data. The ranking process was both extensive and rigorous: more than 1,443 conferences were assessed, each selected after detailed examination and verification. Furthermore, this evaluation involved the analysis of over 14,323 scientific documents published in the last three years by 12,755 respected and influential scientists actively contributing to the field of Materials Science.

This exhaustive and methodologically sound process underscores the depth of research and expertise invested by the Research.com team, with the intention of providing the scientific community, funding bodies, and academic institutions with the most trusted and credible resource for assessing conference quality in Materials Science.

For further information about the methodology employed to compute the ranking scores, please refer to our Methodology Page.

Papers citation over time

A key indicator for each conference is its effectiveness in reaching other researchers with the papers published at that venue.

The chart below presents the interquartile range (first quartile 25%, median 50% and third quartile 75%) of the number of citations of articles over time.

Top authors and change over time

The top authors publishing at IEEE Silicon Nanoelectronics Workshop (based on the number of publications) are:

Byung-Gook Park (68 papers) published 2 papers at the last edition, 3 less than at the previous edition,
Hyungcheol Shin (40 papers) published 2 papers at the last edition,
Toshiro Hiramoto (35 papers) published 4 papers at the last edition, 1 more than at the previous edition,
Hiroshi Mizuta (26 papers) published 1 paper at the last edition the same number as at the previous edition,
Jong-Ho Lee (23 papers) published 1 paper at the last edition, 1 less than at the previous edition.

The overall trend for top authors publishing at this conference is outlined below. The chart shows the number of publications at each edition of the conference for top authors.

Top affiliations and change over time

Only papers with recognized affiliations are considered

The top affiliations publishing at IEEE Silicon Nanoelectronics Workshop (based on the number of publications) are:

Seoul National University (85 papers) published 4 papers at the last edition, 1 less than at the previous edition,
National Chiao Tung University (58 papers) absent at the last edition,
University of Tokyo (51 papers) published 6 papers at the last edition the same number as at the previous edition,
Peking University (40 papers) published 1 paper at the last edition, 2 less than at the previous edition,
Shizuoka University (37 papers) published 2 papers at the last edition, 3 less than at the previous edition.

The overall trend for top affiliations publishing at this conference is outlined below. The chart shows the number of publications at each edition of the conference for top affiliations.

Publication chance based on affiliation

The publication chance index shows the ratio of articles published by the best research institutions at the conference edition to all articles published within that conference. The best research institutions were selected based on the largest number of articles published during all editions of the conference.

The chart below presents the percentage ratio of articles from top institutions (based on their ranking of total papers).Top affiliations were grouped by their rank into the following tiers: top 1-10, top 11-20, top 21-50, and top 51+. Only articles with a recognized affiliation are considered.

During the most recent 2021 edition, 4.35% of publications had an unrecognized affiliation. Out of the publications with recognized affiliations, 36.36% were posted by at least one author from the top 10 institutions publishing at the conference. Another 11.36% included authors affiliated with research institutions from the top 11-20 affiliations. Institutions from the 21-50 range included 29.55% of all publications and 22.73% were from other institutions.

Returning Authors Index

A very common phenomenon observed among researchers publishing scientific articles is the intentional selection of conferences they have already attended in the past. In particular, it is worth analyzing the case when the authors participate in the same conference from year to year.

The Returning Authors Index presented below illustrates the ratio of authors who participated in both a given as well as the previous edition of the conference in relation to all participants in a given year.

Returning Institution Index

The graph below shows the Returning Institution Index, illustrating the ratio of institutions that participated in both a given and the previous edition of the conference in relation to all affiliations present in a given year.

The experience to innovation index

Our experience to innovation index was created to show a cross-section of the experience level of authors publishing at a conference. The index includes the authors publishing at the last edition of a conference, grouped by total number of publications throughout their academic career (P) and the total number of citations of these publications ever received (C).

The group intervals were selected empirically to best show the diversity of the authors' experiences, their labels were selected as a convenience, not as judgment. The authors were divided into the following groups:

Novice - P < 5 or C < 25 (the number of publications less than 5 or the number of citations less than 25),
Competent - P < 10 or C < 100 (the number of publications less than 10 or the number of citations less than 100),
Experienced - P < 25 or C < 625 (the number of publications less than 25 or the number of citations less than 625),
Master - P < 50 or C < 2500 (the number of publications less than 50 or the number of citations less than 2500),
Star - P ≥ 50 and C ≥ 2500 (both the number of publications greater than 50 and the number of citations greater than 2500).

The chart below illustrates experience levels of first authors in cases of publications with multiple authors.

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