World's Best Scientists 2026 revealed!
Shisheng Lin

Shisheng Lin

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Materials Science 41 12733 12315 3432 3417 135 5951

Shisheng Lin publications per year

The chart shows the history of publications by Shisheng Lin between 1985 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Shisheng Lin published across 41 years, from 1985 to 2025, averaging 3.8 papers a year. Output peaked at 21 publications in 2015. 25 of the 157 publications appeared in the last two years.

No. of publications
5 10 15 20
Bar chart. Horizontal axis: year, 1985 to 2025. Vertical axis: number of publications, 0 to 21. Peak 21 publications in 2015. 1985: 1 publication 1986: 0 publications 1987: 0 publications 1988: 0 publications 1989: 0 publications 1990: 0 publications 1991: 0 publications 1992: 0 publications 1993: 0 publications 1994: 0 publications 1995: 0 publications 1996: 0 publications 1997: 0 publications 1998: 0 publications 1999: 0 publications 2000: 0 publications 2001: 0 publications 2002: 0 publications 2003: 1 publication 2004: 0 publications 2005: 0 publications 2006: 0 publications 2007: 3 publications 2008: 8 publications 2009: 7 publications 2010: 3 publications 2011: 3 publications 2012: 8 publications 2013: 6 publications 2014: 5 publications 2015: 21 publications 2016: 14 publications 2017: 5 publications 2018: 8 publications 2019: 7 publications 2020: 8 publications 2021: 5 publications 2022: 13 publications 2023: 6 publications 2024: 16 publications 2025: 9 publications
1985 2025

157 publications in total across all disciplines

View publications per year as a table
Shisheng Lin: publications per year, 1985 to 2025
Year Publications
1985 1
1986 0
1987 0
1988 0
1989 0
1990 0
1991 0
1992 0
1993 0
1994 0
1995 0
1996 0
1997 0
1998 0
1999 0
2000 0
2001 0
2002 0
2003 1
2004 0
2005 0
2006 0
2007 3
2008 8
2009 7
2010 3
2011 3
2012 8
2013 6
2014 5
2015 21
2016 14
2017 5
2018 8
2019 7
2020 8
2021 5
2022 13
2023 6
2024 16
2025 9
Total 157
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Shisheng Lin publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Shisheng Lin sits on this spectrum.

No. of scientists
200 400 600 800
Bar chart with 57 bars. Horizontal axis: publications, 50–69 to 1,163+. Vertical axis: number of scientists, 0 to 891. Most scientists, 891, have 190–209 publications. The last bar groups every scientist with 1,163 publications or more. The highlighted bar, 130–149 publications, is where this scientist sits. 50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50–69 publications 1,163+

This scientist: 135 publications — 9th percentile

9% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

View publications distribution as a table
Number of Materials Science scientists by publication count, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
Publications Scientists This scientist
50–69 28
70–89 152
90–109 356
110–129 487
130–149 723 135
150–169 835
170–189 850
190–209 891
210–229 862
230–249 766
250–269 726
270–289 665
290–309 593
310–329 537
330–349 477
350–369 440
370–389 356
390–409 321
410–429 256
430–449 246
450–469 216
470–489 212
490–509 174
510–529 194
530–549 162
550–569 131
570–589 111
590–609 103
610–629 99
630–649 77
650–669 92
670–689 56
690–709 53
710–729 53
730–749 38
750–769 52
770–789 43
790–809 38
810–829 34
830–849 25
850–869 18
870–889 20
890–909 24
910–929 27
930–949 20
950–969 17
970–989 10
990–1,009 16
1,010–1,029 13
1,030–1,049 12
1,050–1,069 9
1,070–1,089 8
1,090–1,109 7
1,110–1,129 9
1,130–1,149 2
1,150–1,162 5
1,163+ 100
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Shisheng Lin D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Shisheng Lin sits on this spectrum.

No. of scientists
200 400 600
Bar chart with 64 bars. Horizontal axis: D-Index, 40–41 to 165+. Vertical axis: number of scientists, 0 to 667. Most scientists, 667, have 52–53 D-Index. The last bar groups every scientist with 165 D-Index or more. The highlighted bar, 40–41 D-Index, is where this scientist sits. 40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40–41 D-Index 165+

This scientist: 41 D-Index — 2nd percentile

2% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

View D-Index distribution as a table
Number of Materials Science scientists by D-index, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
D-Index Scientists This scientist
40–41 211 41
42–43 450
44–45 612
46–47 612
48–49 598
50–51 657
52–53 667
54–55 621
56–57 597
58–59 610
60–61 587
62–63 606
64–65 533
66–67 490
68–69 469
70–71 378
72–73 421
74–75 359
76–77 323
78–79 299
80–81 230
82–83 210
84–85 195
86–87 203
88–89 175
90–91 175
92–93 142
94–95 121
96–97 117
98–99 107
100–101 88
102–103 85
104–105 68
106–107 62
108–109 57
110–111 45
112–113 49
114–115 50
116–117 34
118–119 38
120–121 37
122–123 29
124–125 28
126–127 24
128–129 33
130–131 28
132–133 21
134–135 20
136–137 23
138–139 17
140–141 12
142–143 17
144–145 21
146–147 13
148–149 11
150–151 14
152–153 13
154–155 9
156–157 10
158–159 7
160–161 4
162–163 4
164 3
165+ 98
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Overview

Shisheng Lin is affiliated with Zhejiang University in China and has contributed extensively to research in the fields of engineering and materials science. Their work spans several subfields including electrical and electronic engineering, materials chemistry, biomedical engineering, atomic and molecular physics and optics, and mechanical engineering.

Their research topics focus heavily on materials and sensor technologies, particularly:

  • Advanced Sensor and Energy Harvesting Materials
  • Nanowire Synthesis and Applications
  • Energy Harvesting in Wireless Networks
  • Gas Sensing Nanomaterials and Sensors
  • Graphene research and applications
  • Luminescence Properties of Advanced Materials
  • GaN-based semiconductor devices and materials

Lin has published a number of papers in diverse and recognized venues. Some of the notable recent works include:

  • "A Novel PiGF@Diamond Color Converter with a Record Thermal Conductivity for Laser-Driven Projection Display," 2024, Advanced Materials
  • "Polarized Water Driven Dynamic PN Junction-Based Direct-Current Generator," 2021, Research
  • "Direct Current Electricity Generation from Dynamic Polarized Water-Semiconductor Interface," 2021, The Journal of Physical Chemistry C
  • "Interfacial Built-In Electric Field-Driven Direct Current Generator Based on Dynamic Silicon Homojunction," 2020, Research
  • "Dynamics and physical process of hot carriers in optoelectronic devices," 2022, Nano Energy

Lin has published extensively in venues such as arXiv (Cornell University), Advanced Functional Materials, Research, SSRN Electronic Journal, and Nano Energy.

Frequent collaboration partners include:

  • Yanghua Lu
  • Xutao Yu
  • Runjiang Shen
  • Yanfei Yan
  • Haonan Zheng

The body of work reflects a strong emphasis on advanced materials science and engineering, with practical applications in energy harvesting and sensor technology. The combination of topics such as nanowire synthesis, luminescence properties, and semiconductor devices indicates an interdisciplinary approach bridging physical chemistry, materials science, and electrical engineering.

Best Publications

  • Light-Emitting Two-Dimensional Ultrathin Silicon Carbide

    S. S. Lin;S. S. Lin

  • ZnO nanotube-based dye-sensitized solar cell and its application in self-powered devices

    Jingbin Han;Fengru Fan;Chen Xu;Shisheng Lin

  • Triboelectrification-Induced Large Electric Power Generation from a Single Moving Droplet on Graphene/Polytetrafluoroethylene

    Sung Soo Kwak;Shisheng Lin;Jeong Hwan Lee;Hanjun Ryu

  • High-security-level multi-dimensional optical storage medium: nanostructured glass embedded with LiGa 5 O 8 : Mn 2+ with photostimulated luminescence.

    Shisheng Lin;Hang Lin;Chonggeng Ma;Yao Cheng

  • 18.5% efficient graphene/GaAs van der Waals heterostructure solar cell

    Xiaoqiang Li;Wenchao Chen;Shengjiao Zhang;Zhiqian Wu

  • P-type behavior in Na-doped ZnO films and ZnO homojunction light-emitting diodes

    S.S. Lin;J.G. Lu;Z.Z. Ye;H.P. He

  • Ab initio study of electronic and optical behavior of two-dimensional silicon carbide

    Xiao Lin;Shisheng Lin;Yang Xu;Ayaz Ali Hakro

  • Monolayer MoS2/GaAs heterostructure self-driven photodetector with extremely high detectivity

    Zhijuan Xu;Shisheng Lin;Xiaoqiang Li;Shengjiao Zhang

  • Graphene-Piezoelectric Material Heterostructure for Harvesting Energy from Water Flow

    Huikai Zhong;Jun Xia;Fengchao Wang;Hongsheng Chen

  • Interface designed MoS2/GaAs heterostructure solar cell with sandwich stacked hexagonal boron nitride

    Shisheng Lin;Xiaoqiang Li;Peng Wang;Zhijuan Xu

  • A High Current Density Direct-Current Generator Based on a Moving van der Waals Schottky Diode.

    Shisheng Lin;Yanghua Lu;Sirui Feng;Zhenzhen Hao

  • Gap-Mode Surface-Plasmon-Enhanced Photoluminescence and Photoresponse of MoS2.

    Zhi-Qian Wu;Jing-Liang Yang;Nallappagar K. Manjunath;Yue-Jiao Zhang

  • Graphene/h-BN/GaAs sandwich diode as solar cell and photodetector.

    Xiaoqiang Li;Shisheng Lin;Xing Lin;Zhijuan Xu

  • Opening the band gap of graphene through silicon doping for the improved performance of graphene/GaAs heterojunction solar cells

    S. J. Zhang;S. S. Lin;X. Q. Li;X. Y. Liu

  • High performance graphene/semiconductor van der Waals heterostructure optoelectronic devices

    Shisheng Lin;Yanghua Lu;Juan Xu;Sirui Feng

  • Enhanced performance of a graphene/GaAs self-driven near-infrared photodetector with upconversion nanoparticles.

    Jianghong Wu;Zhenwei Yang;Caiyu Qiu;Yuejiao Zhang

  • Quasi-Two-Dimensional SiC and SiC2: Interaction of Silicon and Carbon at Atomic Thin Lattice Plane

    Shisheng Lin;Shengjiao Zhang;Xiaoqiang Li;Wenli Xu

  • Co-harvesting Light and Mechanical Energy Based on Dynamic Metal/Perovskite Schottky Junction

    Zhenzhen Hao;Tingming Jiang;Yanghua Lu;Sirui Feng

  • Broadband surface plasmon resonance enhanced self-powered graphene/GaAs photodetector with ultrahigh detectivity

    Yanghua Lu;Sirui Feng;Zhiqian Wu;Yixiao Gao

  • The Interaction between Quantum Dots and Graphene: The Applications in Graphene‐Based Solar Cells and Photodetectors

    Jianghong Wu;Yanghua Lu;Sirui Feng;Zhiqian Wu

  • Direct-Current Generator Based on Dynamic PN Junctions with the Designed Voltage Output.

    Yanghua Lu;Zhenzhen Hao;Sirui Feng;Runjiang Shen

  • Evaluation of ultra-low-k dielectric materials for advanced interconnects

    C. Jin;C. Jin;S. Lin;J. T. Wetzel

Frequent Co-Authors

Hongsheng Chen
Hongsheng Chen Zhejiang University
Haiping He
Haiping He Zhejiang University
Zhizhen Ye
Zhizhen Ye Zhejiang University
Binghui Zhao
Binghui Zhao Zhejiang University
Er-Ping Li
Er-Ping Li Zhejiang University
Jikui Luo
Jikui Luo Zhejiang University
Zhong Lin Wang
Zhong Lin Wang Georgia Institute of Technology
Limin Tong
Limin Tong Zhejiang University
Liping Zhu
Liping Zhu Zhejiang University
Jian-Feng Li
Jian-Feng Li Xiamen University

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