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Olivier Joubert

Olivier Joubert

D-Index & Metrics

Chemistry

D-Index
48
Citations
8064
World Ranking
15261
National Ranking
653

Overview

Olivier Joubert is affiliated with the University of Nantes in France and has contributed extensively to the fields of Materials Science and Engineering. Their research focuses primarily on materials chemistry, with significant work in electrical and electronic engineering and biomedical engineering subfields. The scientist's studies intersect various topics such as advancements in solid oxide fuel cells, fuel cells and related materials, and the electronic and structural properties of oxides.

Joubert's recent publications illustrate a focus on ceramic materials and functional oxides, particularly in relation to energy applications. Some of the notable papers include:

  • Application of the cold sintering process to the electrolyte material BaCe0.8Zr0.1Y0.1O3-δ (2020) published in the Journal of the European Ceramic Society
  • Recycling and characterization of end-of-life solid oxide fuel/electrolyzer ceramic material cell components (2022) published in Resources Conservation and Recycling
  • Ni-doped CeO2 nanoparticles to promote and restore the performance of Ni/YSZ cathodes for CO2 electroreduction (2022) published in Applied Surface Science
  • Ru exsolution in substituted La0.75Sr0.25Cr0.5Mn0.5O3-δ compound as anode material for an IT-SOFCs (2021) published in Materials Chemistry and Physics
  • Cold-sintering and Li doped ZnO sintering aid for the densification of BaZr0.7Ce0.2Y0.1O3-δ proton conducting ceramics (2023) published in International Journal of Hydrogen Energy

Frequent co-authors with whom Joubert has collaborated include Annie Le Gal La Salle, Éric Quarez, Clément Nicollet, Kawther Thabet, and Lozane Hamze. This network of collaboration supports a multidisciplinary approach in their research efforts.

Joubert's work is regularly published in journals such as the International Journal of Hydrogen Energy, ECS Meeting Abstracts, Journal of Materials Chemistry A, SSRN Electronic Journal, and the Journal of the European Ceramic Society. The frequent appearance of these venues reflects engagement with active research communities in materials chemistry and energy-related materials.

Their main fields of study are concentrated in:

  • Materials Science
  • Engineering

Subfields include:

  • Materials Chemistry
  • Electrical and Electronic Engineering
  • Biomedical Engineering
  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment

Joubert's research topics also cover:

  • Advancements in Solid Oxide Fuel Cells
  • Fuel Cells and Related Materials
  • Electronic and Structural Properties of Oxides
  • Magnetic and transport properties of perovskites and related materials
  • Nuclear materials and radiation effects
  • Chemical Looping and Thermochemical Processes
  • Thermal Expansion and Ionic Conductivity

Best Publications

  • Pulsed high-density plasmas for advanced dry etching processes

    Samer Banna;Ankur Agarwal;Gilles Cunge;Maxime Darnon

  • Fluorocarbon high‐density plasmas. II. Silicon dioxide and silicon etching using CF4 and CHF3

    G. S. Oehrlein;Y. Zhang;D. Vender;O. Joubert

  • Oxygen atom actinometry reinvestigated: Comparison with absolute measurements by resonance absorption at 130 nm

    J. P. Booth;O. Joubert;J. Pelletier;N. Sadeghi

  • Exsolution of nickel nanoparticles at the surface of a conducting titanate as potential hydrogen electrode material for solid oxide electrochemical cells

    Charline Arrivé;Thibaud Delahaye;Olivier Joubert;Gilles Gauthier

  • The Hedgehog Receptor Patched Is Involved in Cholesterol Transport

    Michel Bidet;Olivier Joubert;Olivier Joubert;Benoit Lacombe;Marine Ciantar

  • New chamber walls conditioning and cleaning strategies to improve the stability of plasma processes

    G Cunge;B Pelissier;O Joubert;R Ramos

  • Crystal structure of low-temperature form of bismuth vanadium oxide determined by rietveld refinement of X-ray and neutron diffraction data (α - Bi4V2O11)

    O. Joubert;A. Jouanneaux;M. Ganne

  • Long-term moderate magnesium-deficient diet shows relationships between blood pressure, inflammation and oxidant stress defense in aging rats

    Denis Blache;Sylvie Devaux;Olivier Joubert;Olivier Joubert;Nadine Loreau;Nadine Loreau

  • New SOFC electrode materials: The Ni-substituted LSCM-based compounds (La0.75Sr0.25)(Cr0.5Mn0.5 − xNix)O3 − δ and (La0.75Sr0.25)(Cr0.5 − xNixMn0.5)O3 − δ

    T. Jardiel;Maria Teresa Caldes;F. Moser;J. Hamon

  • The etching of polymers in oxygen‐based plasmas: A parametric study

    O. Joubert;J. Pelletier;Y. Arnal

  • Drug delivery by polymeric nanoparticles induces autophagy in macrophages.

    H. Eidi;O. Joubert;C. Némos;S. Grandemange

  • Nanometer scale linewidth control during etching of polysilicon gates in high-density plasmas

    O. Joubert;E. Pargon;J. Foucher;X. Detter

  • Mechanisms of porous dielectric film modification induced by reducing and oxidizing ash plasmas

    N. Posseme;T. Chevolleau;T. David;M. Darnon

  • Solid phase synthesis and characterization of new BIMEVOX series: Bi4V2 − xMxO11 − x (M = CrIII, FeIII)

    O. Joubert;M. Ganne;R.N. Vannier;G. Mairesse

  • Solid phase synthesis and characterization of new BIMEVOX series: Bi4V2−xMxO11 (M=Sbv, Nbv)

    O. Joubert;A. Jouanneaux;M. Ganne;R.N. Vannier

  • Mechanisms involved in HBr and Ar cure plasma treatments applied to 193 nm photoresists

    E. Pargon;K. Menguelti;M. Martin;A. Bazin

  • Fluorocarbon high density plasma. V. Influence of aspect ratio on the etch rate of silicon dioxide in an electron cyclotron resonance plasma

    O. Joubert;G. S. Oehrlein;Y. Zhang

  • Characterization of perovskite systems derived from Ba2In2O5□: Part I: the oxygen-deficient Ba2In2(1−x)Ti2xO5+x□1−x (0≤x≤1) compounds

    V Jayaraman;A Magrez;M Caldes;O Joubert

  • Water incorporation and proton conductivity in titanium substituted barium indate

    Eric Quarez;Samuel Noirault;Maria Teresa Caldes;Olivier Joubert

  • Fluorocarbon high density plasma. VI. Reactive ion etching lag model for contact hole silicon dioxide etching in an electron cyclotron resonance plasma

    O. Joubert;G. S. Oehrlein;M. Surendra

  • Plasma–wall interactions during silicon etching processes in high-density HBr/Cl2/O2 plasmas

    G Cunge;M Kogelschatz;O Joubert;N Sadeghi

Frequent Co-Authors

Gilles Prévost
Gilles Prévost University of Strasbourg
Arnaud Magrez
Arnaud Magrez École Polytechnique Fédérale de Lausanne
Alexander P. Lyubartsev
Alexander P. Lyubartsev Stockholm University
Ulla Vogel
Ulla Vogel Technical University of Denmark
Lionel Mourey
Lionel Mourey Federal University of Toulouse Midi-Pyrénées
Mauro Dalla Serra
Mauro Dalla Serra Consiglio Nazionale delle Ricerche - CNR
Martin Irmler
Martin Irmler University of Lausanne
Johannes Beckers
Johannes Beckers Technical University of Munich
Timothy W. Weidman
Timothy W. Weidman Applied Materials (United States)
Raphaël Schneider
Raphaël Schneider University of Lorraine

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