The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Martyn A. McLachlan sits on this spectrum.
This scientist: 149 publications — 14th percentile
14% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 1,163 publications or more.
The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Martyn A. McLachlan sits on this spectrum.
This scientist: 43 D-Index — 5th percentile
5% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 165 D-Index or more.
Martyn A. McLachlan is affiliated with Imperial College London in the United Kingdom and has contributed extensively to research in engineering and materials science. Their work primarily focuses on electrical and electronic engineering, materials chemistry, and related subfields including polymers and plastics, electronic, optical and magnetic materials, as well as atomic and molecular physics and optics.
Their most frequent topics of study encompass perovskite materials and applications, quantum dots synthesis and properties, chalcogenide semiconductor thin films, conducting polymers and their applications, ZnO doping and properties, organic electronics and photovoltaics, and solid-state spectroscopy and crystallography.
McLachlan's publication record includes papers in several notable scientific journals. Recent significant papers include:
The scientist often collaborates with several frequent coauthors, including:
McLachlan's research is regularly published in a number of journals, with multiple papers appearing in:
Their research spans both fundamental and applied aspects of materials chemistry and electrical engineering, with particular emphasis on perovskite-based materials, solar cell technologies, and the development of organic-inorganic hybrid materials. Their work contributes to understanding the mechanisms underlying charge recombination, charge extraction, and doping processes in these advanced materials.
Felix Peter Vinzenz Koch;Jonathan Rivnay;Sam Foster;Christian Müller;Christian Müller
Nilushi Wijeyasinghe;Anna Regoutz;Flurin Eisner;Tian Du
George Adamopoulos;Stuart Thomas;Paul H. Wöbkenberg;Donal D. C. Bradley
Robert M. Hewlett;Martyn A. McLachlan
Ajay Perumal;Hendrik Faber;Nir Yaacobi-Gross;Pichaya Pattanasattayavong
Yen-Hung Lin;Hendrik Faber;Kui Zhao;Qingxiao Wang
Unknown
Yen-Hung Lin;Hendrik Faber;John G. Labram;Emmanuel Stratakis
George Adamopoulos;Stuart Thomas;Donal D. C. Bradley;Martyn A. McLachlan
Lethy Krishnan Jagadamma;Mohammed Al-Senani;Abdulrahman El-Labban;Issam Gereige
Martyn A. McLachlan;Nigel P. Johnson;Richard M. De La Rue;David W. McComb
Tian Du;Weidong Xu;Shengda Xu;Sinclair R. Ratnasingham;Sinclair R. Ratnasingham
Tian Du;Claire H. Burgess;Jinhyun Kim;Jiaqi Zhang
Pichaya Pattanasattayavong;Stuart Thomas;George Adamopoulos;Martyn A. McLachlan
S. Schumann;R. Da Campo;B. Illy;A. C. Cruickshank
Benoit N. Illy;Amy C. Cruickshank;Stefan Schumann;Raffaello Da Campo
J. B. Franklin;B. Zou;P. Petrov;D. W. McComb
David J. Beesley;James Semple;Lethy Krishnan Jagadamma;Aram Amassian
Tian Du;Jinhyun Kim;Jonathan Ngiam;Shengda Xu
Chongjun Jin;Martyn A. Mclachlan;David W. Mccomb;Richard M. De La Rue
Hendrik Faber;Yen-Hung Lin;Stuart R. Thomas;Kui Zhao
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