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L.F. Tiemeijer

L.F. Tiemeijer

Overview

L.F. Tiemeijer is affiliated with Philips (Finland) and conducts research primarily within the field of Engineering. Their work spans several specialized subfields, including Electrical and Electronic Engineering, Media Technology, and Biomedical Engineering.

The main topics addressed in their research output cover Radio Frequency Integrated Circuit Design, Electromagnetic Compatibility and Measurements, RFID technology advancements, Photonic and Optical Devices, as well as Analog and Mixed-Signal Circuit Design.

Recent publications by Tiemeijer feature the following papers:

  • "Mm-wave automotive radar: from evolution to revolution," 2021, published in the 2021 IEEE International Electron Devices Meeting (IEDM)
  • "X-Parameters Based Characterization and Compact Modeling of SiGe HBT Linearity," 2020, published in ECS Transactions

The scientist has collaborated with several co-authors, including:

  • Kostas Doris
  • Feike Jansen
  • Maarten Lont
  • Dinh Thanh Viet
  • Waqas H. Syed

Tiemeijer's publications have appeared in venues such as the 2021 IEEE International Electron Devices Meeting (IEDM) and ECS Transactions. These venues align with the focus on electronic devices and materials science.

Best Publications

  • High-performance 1.5 mu m wavelength InGaAs-InGaAsP strained quantum well lasers and amplifiers

    P.J.A. Thijs;L.F. Tiemeijer;P.I. Kuindersma;J.J.M. Binsma

  • Progress in long-wavelength strained-layer InGaAs(P) quantum-well semiconductor lasers and amplifiers

    P.J.A. Thiis;L.F. Tiemeijer;J.J.M. Binsma;T. Van Dongen

  • Polarization insensitive multiple quantum well laser amplifiers for the 1300 nm window

    L. F. Tiemeijer;P. J. A. Thijs;T. van Dongen;R. W. M. Slootweg

  • Accurate thermal noise model for deep-submicron CMOS

    A.J. Scholten;H.J. Tromp;L.F. Tiemeijer;R. Van Langevelde

  • Reduced intermodulation distortion in 1300 nm gain-clamped MQW laser amplifiers

    L.F. Tiemeijer;P.J.A. Thijs;T. van Dongen;J.J.M. Binsma

  • Experimental assessment of self-heating in SOI FinFETs

    A.J. Scholten;G.D.J. Smit;R.M.T. Pijper;L.F. Tiemeijer

  • A large signal non-quasi-static MOS model for RF circuit simulation

    A.J. Scholten;L.F. Tiemeijer;P.W.H. De Vreede;D.B.M. Klaassen

  • High-performance /spl lambda/=1.3 /spl mu/m InGaAsP-InP strained-layer quantum well lasers

    P.J.A. Thijs;T. van Dongen;L.F. Tiemeijer;J.J.M. Binsma

  • RF-distortion in deep-submicron CMOS technologies

    R. van Langevelde;L.F. Tiemeijer;R.J. Havens;M.J. Knitel

  • RF capacitance-voltage characterization of MOSFETs with high leakage dielectrics

    J. Schmitz;F.N. Cubaynes;R.J. Havens;R. de Kort

  • Improved Y-factor method for wide-band on-wafer noise-parameter measurements

    L.F. Tiemeijer;R.J. Havens;R. de Kort;A.J. Scholten

  • Submilliamp threshold current (0.62 mA at 0 degrees C) and high output power (220 mW) 1.5 mu m tensile strained InGaAs single quantum well lasers

    P.J.A. Thijs;J.J.M. Binsma;L.F. Tiemeijer;T. van Dongen

  • Effect of free carriers on the linewidth enhancement factor of InGaAs/InP (strained‐layer) multiple quantum well lasers

    L. F. Tiemeijer;P. J. A. Thijs;J. J. M. Binsma;T. v. Dongen

  • Polarization resolved, complete characterization of 1310 nm fiber pigtailed multiple-quantum-well optical amplifiers

    L.F. Tiemeijer;P.J.A. Thijs;T. van Dongen;J.J.M. Binsma

  • The New CMC Standard Compact MOS Model PSP: Advantages for RF Applications

    A.J. Scholten;G.D.J. Smit;B.A. De Vries;L.F. Tiemeijer

  • Compact modelling of noise for RF CMOS circuit design

    A.J. Scholten;L.F. Tiemeijer;R. van Langevelde;R.J. Havens

  • Test structure design considerations for RF-CV measurements on leaky dielectrics

    J. Schmitz;F.N. Cubaynes;R.J. Havens;R. de Kort

  • Physics-based wideband predictive compact model for inductors with high amounts of dummy metal fill

    L.F. Tiemeijer;R.J. Havens;Y. Bouttement;H.J. Pranger

  • 1310-nm DBR-type MQW gain-clamped semiconductor optical amplifiers with AM-CATV-grade linearity

    L.F. Tiemeijer;G.N. van den Hoven;P.J.A. Thijs;T. van Dongen

  • RF-CMOS Performance Trends

    P.H. Woerlee;R. Van Langevelde;A.H. Montree;D.B.M. Klaassen

Frequent Co-Authors

H. de Waardt
H. de Waardt Eindhoven University of Technology
Guofu Niu
Guofu Niu Auburn University
Jurriaan Schmitz
Jurriaan Schmitz University of Twente

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