World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
35
Citations
4970
World Ranking
5582
National Ranking
1912

Best Publications

  • Cryogenic wide-band ultra-low-noise IF amplifiers operating at ultra-low DC power

    N. Wadefalk;A. Mellberg;I. Angelov;M.E. Barsky

  • A 108-GHz InP-HBT monolithic push-push VCO with low phase noise and wide tuning bandwidth

    Unknown

  • 94-GHz 0.1- mu m T-gate low-noise pseudomorphic InGaAs HEMTs

    Unknown

  • 0.10 /spl mu/m graded InGaAs channel InP HEMT with 305 GHz f/sub T/ and 340 GHz f/sub max/

    M. Wojtowicz;R. Lai;D.C. Streit;G.I. Ng

  • High-performance in W-band monolithic pseudomorphic InGaAs HEMT LNA's and design/analysis methodology

    H. Wang;G.S. Dow;B.R. Allen;T.-N. Ton

  • A 95-GHz InP HEMT MMIC amplifier with 427-mW power output

    Y.C. Chen;D.L. Ingram;R. Lai;M. Barsky

  • Impact ionization and light emission in high-power pseudomorphic AlGaAs/InGaAs HEMTs

    C. Tedesco;E. Zanoni;C. Canali;S. Bigliardi

  • LT-GaAs detector with 451 fs response at 1.55 [micro sign]m via two-photon absorption

    H. Erlig;S. Wang;T. Azfar;A. Udupa

  • Two‐dimensional electron gas effects in the electromodulation spectra of a pseudomorphic Ga0.78Al0.22As/In0.21Ga0.79As/GaAs modulation‐doped quantum well structure

    Yichun Yin;H. Qiang;Fred H. Pollak;Dwight C. Streit

  • Low phase noise millimeter-wave frequency sources using InP-based HBT MMIC technology

    Huei Wang;Kwo Wei Chang;L.T. Tran;J.C. Cowles

  • Ultrahigh-speed direct digital synthesizer using InP DHBT technology

    Unknown

  • A D-band monolithic fundamental oscillator using InP-based HEMT's

    Y. Kwon;D. Pavlidis;T.L. Brock;D.C. Streit

  • Highpower 0.15-mm V-band pseudomorphic InGaAs-AlGaAs-GaAs HEMT

    R. Lai;M. Wojtowicz;C.H. Chen;M. Biedenbender

  • High-gain W band pseudomorphic InGaAs power HEMTs

    Unknown

  • High-power V-band pseudomorphic InGaAs HEMT

    Unknown

  • Millimeter-wave, cryogenically-coolable amplifiers using AlInAs/GaInAs/InP HEMTs

    M.W. Pospieszalski;W.J. Lakatosh;R. Lai;K.L. Tan

  • Ultra-low dc power GaAs HBT S- and C-band low noise amplifiers for portable wireless applications

    Unknown

  • A 62-GHz monolithic InP-based HBT VCO

    Huei Wang;Kwo-Wei Chang;D.C.-W. Lo;L.T. Tran

  • Doping of silicon in molecular beam epitaxy systems by solid phase epitaxy

    Unknown

  • A 140-GHz monolithic low noise amplifier

    H. Wang;R. Lai;D.C.W. Lo;D.C. Streit

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