World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
59
Citations
12408
World Ranking
7376
National Ranking
308

Chan Eon Park publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Chan Eon Park sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 290 publications — 57th percentile

57% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Chan Eon Park D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Chan Eon Park sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 59 D-Index — 44th percentile

44% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Chan Eon Park is affiliated with the Pohang University of Science and Technology in South Korea. Their research is primarily situated within the field of Engineering, with a specific focus on Electrical and Electronic Engineering, Biomedical Engineering, Polymers and Plastics, Materials Chemistry, and Renewable Energy, Sustainability and the Environment.

Their work covers several main topics, including:

  • Advanced Sensor and Energy Harvesting Materials
  • Organic Electronics and Photovoltaics
  • Semiconductor materials and devices
  • Thin-Film Transistor Technologies
  • Electrohydrodynamics and Fluid Dynamics
  • Advanced Memory and Neural Computing
  • Electrowetting and Microfluidic Technologies

Park has published extensively, with notable papers such as:

  • Newly Synthesized Nonvacuum Processed High-k Polymeric Dielectrics with Carboxyl Functionality for Highly Stable Operating Printed Transistor Applications (2020, Advanced Functional Materials)
  • Printable Ultra-Flexible Fluorinated Organic-Inorganic Nanohybrid Sol-Gel Derived Gate Dielectrics for Highly Stable Organic Thin-Film Transistors and Other Practical Applications (2020, Advanced Functional Materials)
  • Non-lithographic direct patterning of carbon nanomaterial electrodes via electrohydrodynamic-printed wettability patterns by polymer brush for fabrication of organic field-effect transistor (2020, Applied Surface Science)
  • Strategy for Selective Printing of Gate Insulators Customized for Practical Application in Organic Integrated Devices (2020, ACS Applied Materials & Interfaces)
  • Slot-die coating of sol-gel-based organic-inorganic nanohybrid dielectric layers for flexible and large-area organic thin film transistors (2020, Applied Surface Science)

Frequent publication venues for Park include:

  • Advanced Functional Materials
  • ACS Applied Materials & Interfaces
  • Applied Surface Science
  • Macromolecular Research
  • Organic Electronics

The scientist often collaborates with other researchers. Frequent co-authors include:

  • Hyeok-jin Kwon
  • Se Hyun Kim
  • Heqing Ye
  • Xiaowu Tang
  • Jisu Hong

Best Publications

  • Highly Stretchable Resistive Pressure Sensors Using a Conductive Elastomeric Composite on a Micropyramid Array

    Chwee-Lin Choong;Mun-Bo Shim;Byoung-Sun Lee;Sanghun Jeon;Sanghun Jeon

  • The Effect of Gate-Dielectric Surface Energy on Pentacene Morphology and Organic Field-Effect Transistor Characteristics

    Sang Yoon Yang;Kwonwoo Shin;Chan Eon Park

  • High-Field-Effect Mobility of Low-Crystallinity Conjugated Polymers with Localized Aggregates

    Sung Y. Son;Yebyeol Kim;Junwoo Lee;Gang-Young Lee

  • Poly(3-hexylthiophene) wrapped carbon nanotube/poly(dimethylsiloxane) composites for use in finger-sensing piezoresistive pressure sensors

    Jihun Hwang;Jaeyoung Jang;Kipyo Hong;Kun Nyun Kim

  • Al2O3/TiO2 nanolaminate thin film encapsulation for organic thin film transistors via plasma-enhanced atomic layer deposition.

    Lae Ho Kim;Kyunghun Kim;Seonuk Park;Yong Jin Jeong

  • Benzotriazole-Containing Planar Conjugated Polymers with Noncovalent Conformational Locks for Thermally Stable and Efficient Polymer Field-Effect Transistors

    Seungjib Yum;Tae Kyu An;Xiaowei Wang;Wonho Lee

  • H‐Aggregation Strategy in the Design of Molecular Semiconductors for Highly Reliable Organic Thin Film Transistors

    Seul-ong Kim;Tae Kyu An;Jun Chen;Il Kang

  • Real Time Exfoliation Behavior of Clay Layers in Epoxy−Clay Nanocomposites

    Doil Kong;Chan Eon Park

  • Investigation of crystallinity effects on the surface of oxygen plasma treated low density polyethylene using X-ray photoelectron spectroscopy

    Kwang Soo Kim;Chang Mo Ryu;Chan Sup Park;Gil Soo Sur

  • Low-voltage pentacene field-effect transistors with ultrathin polymer gate dielectrics

    Sang Yoon Yang;Se Hyun Kim;Kwonwoo Shin;Hayoung Jeon

  • Complementary Absorbing Star-Shaped Small Molecules for the Preparation of Ternary Cascade Energy Structures in Organic Photovoltaic Cells

    Hyojung Cha;Dae Sung Chung;Suk Young Bae;Min Jung Lee

  • Pentacene Nanostructures on Surface‐Hydrophobicity‐Controlled Polymer/SiO2 Bilayer Gate‐Dielectrics

    Hoichang Yang;Se Hyun Kim;Lin Yang;Sang Yoon Yang

  • Multiwall carbon nanotube and poly(3,4-ethylenedioxythiophene): polystyrene sulfonate (PEDOT:PSS) composite films for transistor and inverter devices.

    Dong-Jin Yun;KiPyo Hong;Se hyun Kim;Won-Min Yun

  • Preparation of aqueous polyaniline dispersions by micellar-aided polymerization

    Lei Yu;Lei Yu;Jeong-II Lee;Kwon-Woo Shin;Chan-Eon Park

  • Reduced Water Vapor Transmission Rate of Graphene Gas Barrier Films for Flexible Organic Field-Effect Transistors.

    Kyoungjun Choi;Sooji Nam;Sooji Nam;Youngbin Lee;Mijin Lee

  • Low-operating-voltage pentacene field-effect transistor with a high-dielectric-constant polymeric gate dielectric

    Se Hyun Kim;Sang Yoon Yang;Kwonwoo Shin;Hayoung Jeon

  • Physicochemically Stable Polymer‐Coupled Oxide Dielectrics for Multipurpose Organic Electronic Applications

    Se Hyun Kim;Mi Jang;Hoichang Yang;John E. Anthony

  • Reducing the contact resistance in organic thin-film transistors by introducing a PEDOT:PSS hole-injection layer

    Kipyo Hong;Sang Yoon Yang;Chanwoo Yang;Se Hyun Kim

  • Effect of water in ambient air on hysteresis in pentacene field-effect transistors containing gate dielectrics coated with polymers with different functional groups

    Se Hyun Kim;Hoichang Yang;Sang Yoon Yang;Kipyo Hong

  • Surface Modification of CdSe Quantum-Dot Floating Gates for Advancing Light-Erasable Organic Field-Effect Transistor Memories

    Yong Jin Jeong;Dong Jin Yun;Sung Hoon Noh;Chan Eon Park

  • Soluble polyimides from unsymmetrical diamine containing benzimidazole ring and trifluoromethyl pendent group

    Hyungsam Choi;Im Sik Chung;Kipyo Hong;Chan Eon Park

Frequent Co-Authors

Dae Sung Chung
Dae Sung Chung Pohang University of Science and Technology
Yun-Hi Kim
Yun-Hi Kim Gyeongsang National University
Soon-Ki Kwon
Soon-Ki Kwon Gyeongsang National University
Jaeyoung Jang
Jaeyoung Jang Hanyang University
Kilwon Cho
Kilwon Cho Pohang University of Science and Technology
Hoichang Yang
Hoichang Yang Inha University
Moonhor Ree
Moonhor Ree Pohang University of Science and Technology
Hong-Ku Shim
Hong-Ku Shim Korea Advanced Institute of Science and Technology
John E. Anthony
John E. Anthony University of Kentucky
Taiho Park
Taiho Park Pohang University of Science and Technology

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