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Solid-State Electronics
H-index 17

Solid-State Electronics

Ranking & Metrics

Discipline name Position Best Scientists Publications D-Index
Electronics and Electrical Engineering 224 138 339 16
Materials Science 422 91 169 15

Additional Metrics

Number of Best Scientists*: 242
Documents by Best Scientists*: 432
Top 100 Ranked Scientists*: 2
SCIMAGO H-index: 108
SCIMAGO SJR: 0.352
Impact Factor: 1.4

Overview

Top Research Topics at Solid-state Electronics?

The discussions in Solid-state Electronics mainly cover the fields of Optoelectronics, Electrical engineering, Electronic engineering, Condensed matter physics and Analytical chemistry. Transistor and Voltage are some topics wherein Optoelectronics research discussed in it have an impact. Research on Electrical engineering addressed in Solid-state Electronics frequently intersections with the field of Silicon on insulator.

Solid-state Electronics explores issues in Electronic engineering which can be linked to other research areas like Computational physics and Communication channel. While work presented in the journal provided substantial information on Condensed matter physics, it also covered topics in Quantum well, Electron, Electric field and Semiconductor. The Electron study tackled is a key component of adjacent topics in the area of Atomic physics.

Solid-state Electronics focuses on Analytical chemistry but the discussions also offer insight into other areas such as Capacitance, Oxide and Annealing (metallurgy). The concepts on Bipolar junction transistor presented in the journal can also apply to other research fields, including Heterojunction and Common emitter. The Diode study featured in Solid-state Electronics draws connections with the study of Optics.

  • Optoelectronics (43.56%)
  • Electrical engineering (22.42%)
  • Electronic engineering (18.55%)

What are the most cited papers published in the journal?

  • An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes (1230 citations)
  • Field and thermionic-field emission in Schottky barriers (1101 citations)
  • Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review (1046 citations)

Research areas of the most cited articles at Solid-state Electronics:

The most cited publications aim to foster the development of research in Optoelectronics, Electrical engineering, Electronic engineering, Condensed matter physics and Analytical chemistry. While Optoelectronics is the focus of the most cited publications, it also provides insights into the studies of Transistor and Voltage. The most cited articles with studies in Condensed matter physics featured incorporate elements of Electron, Electric field and Semiconductor.

What topics the last edition of the journal is best known for?

  • Quantum mechanics
  • Electron
  • Optics

The previous edition focused in particular on these issues:

Optoelectronics, Transistor, Voltage, Threshold voltage and Diode are among the topics commonly tackled in Solid-state Electronics. More specifically, the research on Optoelectronics in it is related to Silicon. It explores topics in Transistor which can be helpful for research in disciplines like Silicon on insulator, CMOS and Communication channel.

The CMOS research presented in it explores the relationship between MOSFET and the closely related topic of Condensed matter physics. The study of Electronic engineering and how it intertwines with concepts under Reliability (semiconductor) were explored in the presented Voltage research. It holds forums on Threshold voltage that merges themes from other disciplines such as Electron mobility, Work (thermodynamics) and Thin-film transistor.

The most cited articles from the last journal are:

  • Silicon photonics for terabit/s communication in data centers and exascale computers (5 citations)
  • 2.7-kV AlGaN/GaN Schottky barrier diode on silicon substrate with recessed-anode structure (5 citations)
  • A fast small signal modeling method for GaN HEMTs (4 citations)

Papers citation over time

A key indicator for each journal is its effectiveness in reaching other researchers with the papers published at that venue.

The chart below presents the interquartile range (first quartile 25%, median 50% and third quartile 75%) of the number of citations of articles over time.

The top authors publishing in Solid-state Electronics (based on the number of publications) are:

  • Gerard Ghibaudo (167 papers) published 6 papers at the last edition, 2 less than at the previous edition,
  • Fan Ren (115 papers) absent at the last edition,
  • A. van der Ziel (114 papers) absent at the last edition,
  • Stephen J. Pearton (107 papers) absent at the last edition,
  • Sorin Cristoloveanu (99 papers) published 7 papers at the last edition, 3 more than at the previous edition.

The overall trend for top authors publishing in this journal is outlined below. The chart shows the number of publications at each edition of the journal for top authors.

Only papers with recognized affiliations are considered

The top affiliations publishing in Solid-state Electronics (based on the number of publications) are:

  • University of Florida (271 papers) absent at the last edition,
  • Katholieke Universiteit Leuven (266 papers) published 14 papers at the last edition, 11 more than at the previous edition,
  • IBM (256 papers) published 1 paper at the last edition, 1 less than at the previous edition,
  • STMicroelectronics (225 papers) published 7 papers at the last edition, 2 less than at the previous edition,
  • National Chiao Tung University (212 papers) absent at the last edition.

The overall trend for top affiliations publishing in this journal is outlined below. The chart shows the number of publications at each edition of the journal for top affiliations.

Publication chance based on affiliation

The publication chance index shows the ratio of articles published by the best research institutions in the journal edition to all articles published within that journal. The best research institutions were selected based on the largest number of articles published during all editions of the journal.

The chart below presents the percentage ratio of articles from top institutions (based on their ranking of total papers).Top affiliations were grouped by their rank into the following tiers: top 1-10, top 11-20, top 21-50, and top 51+. Only articles with a recognized affiliation are considered.

During the most recent 2021 edition, 2.76% of publications had an unrecognized affiliation. Out of the publications with recognized affiliations, 13.07% were posted by at least one author from the top 10 institutions publishing in the journal. Another 7.39% included authors affiliated with research institutions from the top 11-20 affiliations. Institutions from the 21-50 range included 17.61% of all publications and 61.93% were from other institutions.

Returning Authors Index

A very common phenomenon observed among researchers publishing scientific articles is the intentional selection of journals they have already attended in the past. In particular, it is worth analyzing the case when the authors participate in the same journal from year to year.

The Returning Authors Index presented below illustrates the ratio of authors who participated in both a given as well as the previous edition of the journal in relation to all participants in a given year.

Returning Institution Index

The graph below shows the Returning Institution Index, illustrating the ratio of institutions that participated in both a given and the previous edition of the conference in relation to all affiliations present in a given year.

The experience to innovation index

Our experience to innovation index was created to show a cross-section of the experience level of authors publishing in a journal. The index includes the authors publishing at the last edition of a journal, grouped by total number of publications throughout their academic career (P) and the total number of citations of these publications ever received (C).

The group intervals were selected empirically to best show the diversity of the authors' experiences, their labels were selected as a convenience, not as judgment. The authors were divided into the following groups:

  • Novice - P < 5 or C < 25 (the number of publications less than 5 or the number of citations less than 25),
  • Competent - P < 10 or C < 100 (the number of publications less than 10 or the number of citations less than 100),
  • Experienced - P < 25 or C < 625 (the number of publications less than 25 or the number of citations less than 625),
  • Master - P < 50 or C < 2500 (the number of publications less than 50 or the number of citations less than 2500),
  • Star - P ≥ 50 and C ≥ 2500 (both the number of publications greater than 50 and the number of citations greater than 2500).

The chart below illustrates experience levels of first authors in cases of publications with multiple authors.

Top Publications

  • Nanowire & nanosheet FETs for ultra-scaled, high-density logic and memory applications

    A. Veloso;T. Huynh-Bao;P. Matagne;D. Jang

    (2020)
    67 Citations
  • Reconfigurable Field Effect Transistors: A Technology Enablers Perspective

    (2022)
    62 Citations
  • SO2 gas sensing characteristics of FET- and resistor-type gas sensors having WO3 as sensing material

    Gyuweon Jung;Yujeong Jeong;Yoonki Hong;Meile Wu

    (2020)
    57 Citations
  • Scaled resistively-coupled VO2 oscillators for neuromorphic computing

    Elisabetta Corti;Elisabetta Corti;Bernd Gotsmann;Kirsten Moselund;Adrian M. Ionescu

    (2020)
    57 Citations
  • On the modelling of temperature dependence of subthreshold swing in MOSFETs down to cryogenic temperature

    G. Ghibaudo;M. Aouad;M. Casse;S. Martinie

    (2020)
    49 Citations
  • 20 Years of reconfigurable field-effect transistors: From concepts to future applications

    T. Mikolajick;G. Galderisi;M. Simon;S. Rai

    (2021)
    43 Citations

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Best Scientists Contributing to This Journal