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Michael Rohlfing

Michael Rohlfing

D-Index & Metrics

Chemistry

D-Index
54
Citations
11524
World Ranking
12534
National Ranking
920

Overview

Michael Rohlfing is affiliated with the University of Münster in Germany. Their research primarily focuses on materials science and physics, with a significant body of work in materials chemistry and atomic and molecular physics and optics. They also have publications connected to electrical and electronic engineering, biomedical engineering, and organic chemistry.

Their research topics encompass:

  • 2D Materials and Applications
  • Graphene research and applications
  • Perovskite Materials and Applications
  • MXene and MAX Phase Materials
  • Quantum and electron transport phenomena
  • Advanced Chemical Physics Studies
  • Molecular Junctions and Nanostructures

Rohlfing has contributed to multiple publication venues, with a notable presence in:

  • Physical review. B./Physical review. B
  • arXiv (Cornell University)
  • ACS Nano
  • Journal of Chemical Theory and Computation
  • Nano Letters

Frequent co-authors include Thorsten Deilmann, Ursula Wurstbauer, Marie-Christin Heißenbüttel, Rudolf Bratschitsch, and Philipp Marauhn.

Some recent research publications are:

  • The Bulk van der Waals Layered Magnet CrSBr is a Quasi-1D Material, 2023, ACS Nano
  • Ab Initio Studies of Exciton g Factors: Monolayer Transition Metal Dichalcogenides in Magnetic Fields, 2020, Physical Review Letters
  • Dark trions govern the temperature-dependent optical absorption and emission of doped atomically thin semiconductors, 2020, Physical review. B./Physical review. B
  • Kekulene: On-Surface Synthesis, Orbital Structure, and Aromatic Stabilization, 2020, ACS Nano
  • Electronic and optical properties of a hexagonal boron nitride monolayer in its pristine form and with point defects from first principles, 2022, Physical review. B./Physical review. B

Best Publications

  • Electron-hole excitations and optical spectra from first principles

    Michael Rohlfing;Steven G. Louie;Steven G. Louie

  • Electron-Hole Excitations in Semiconductors and Insulators

    Michael Rohlfing;Michael Rohlfing;Steven G. Louie;Steven G. Louie

  • Excitonic Effects and the Optical Absorption Spectrum of Hydrogenated Si Clusters

    Michael Rohlfing;Michael Rohlfing;Steven G. Louie;Steven G. Louie

  • Quasiparticle band-structure calculations for C, Si, Ge, GaAs, and SiC using Gaussian-orbital basis sets.

    Michael Rohlfing;Peter Krüger;Johannes Pollmann

  • Molecular Distortions and Chemical Bonding of a Large π-Conjugated Molecule on a Metal Surface

    A. Hauschild;Khadga Jung Karki;B.C.C. Cowie;M. Rohlfing

  • Efficient scheme for GW quasiparticle band-structure calculations with applications to bulk Si and to the Si(001)-(2×1) surface

    Michael Rohlfing;Peter Krüger;Johannes Pollmann

  • Biaxial strain tuning of the optical properties of single-layer transition metal dichalcogenides

    Riccardo Frisenda;Matthias Drüppel;Robert Schmidt;Steffen Michaelis de Vasconcellos

  • Strain control of exciton-phonon coupling in atomically thin semiconductors

    Iris Niehues;Robert Schmidt;Matthias Drüppel;Philipp Marauhn

  • Excitons and Optical Spectrum of the Si ( 111 ) − ( 2 × 1 ) Surface

    Michael Rohlfing;Steven G. Louie

  • Diversity of trion states and substrate effects in the optical properties of an MoS2 monolayer.

    Matthias Drüppel;Thorsten Deilmann;Peter Krüger;Michael Rohlfing

  • Imaging Pauli repulsion in scanning tunneling microscopy.

    C. Weiss;C. Wagner;C. Kleimann;M. Rohlfing

  • Adsorption structure and scanning tunneling data of a prototype organic-inorganic interface : PTCDA on Ag(111)

    Michael Rohlfing;Ruslan Temirov;Frank Stefan Tautz

  • Lateral adsorption geometry and site-specific electronic structure of a large organic chemisorbate on a metal surface

    A. Kraft;R. Temirov;S. K. M. Henze;S. Soubatch

  • Reversible uniaxial strain tuning in atomically thin WSe 2

    Robert Schmidt;Iris Niehues;Robert Schneider;Matthias Drüppel

  • Highly Anisotropic in-Plane Excitons in Atomically Thin and Bulklike 1T′-ReSe2

    Ashish Arora;Jonathan Noky;Matthias Drüppel;Bhakti Jariwala

  • Dynamics of Exciton Formation at the Si(100) c(4×2) Surface

    Martin Weinelt;Michael Kutschera;Thomas Fauster;Michael Rohlfing

  • Binding energy of adsorbates on a noble-metal surface: Exchange and correlation effects

    Michael Rohlfing;Thomas Bredow

  • Binding energy of adsorbates on a noble-metal surface: exchange and correlation effects.

    Michael Rohlfing;Thomas Bredow

  • Quasiparticle band structure of CdS.

    Michael Rohlfing;Peter Krüger;Johannes Pollmann

  • Role of semicore d electrons in quasiparticle band-structure calculations

    Michael Rohlfing;Peter Krüger;Johannes Pollmann

  • Interlayer excitons in a bulk van der Waals semiconductor.

    Ashish Arora;Matthias Drüppel;Robert Schmidt;Thorsten Deilmann;Thorsten Deilmann

  • Excited states of biological chromophores studied using many-body perturbation theory: Effects of resonant-antiresonant coupling and dynamical screening

    Yuchen Ma;Michael Rohlfing;Carla Molteni

  • Excitonic effects and optical absorption spectrum of hydrogenated Si clusters

    Michael Rohlfing;Steven G. Louie

Frequent Co-Authors

Steven G. Louie
Steven G. Louie University of California, Berkeley
Rudolf Bratschitsch
Rudolf Bratschitsch University of Münster
Andres Castellanos-Gomez
Andres Castellanos-Gomez Spanish National Research Council
Alexandre Tkatchenko
Alexandre Tkatchenko University of Luxembourg
Marvin L. Cohen
Marvin L. Cohen University of California, Berkeley
Moritz Sokolowski
Moritz Sokolowski University of Bonn
Denis Andrienko
Denis Andrienko Max Planck Society
Chen Li
Chen Li Dongguan University of Technology
Paul Kögerler
Paul Kögerler RWTH Aachen University

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