Bo Shen

Bo Shen publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Bo Shen sits on this spectrum.

Bo Shen D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Bo Shen sits on this spectrum.

Best Publications

• Generation and electric control of spin–valley-coupled circular photogalvanic current in WSe2

  Hongtao Yuan;Hongtao Yuan;Xinqiang Wang;Biao Lian;Haijun Zhang

  392
  Citations

• High-Performance Normally-Off ${ m Al}_{2}{ m O}_{3}/{ m GaN}$ MOSFET Using a Wet Etching-Based Gate Recess Technique

  Ye Wang;Maojun Wang;Bing Xie;Cheng P. Wen

  243
  Citations

• Role of the Exciton-Polariton in a Continuous-Wave Optically Pumped CsPbBr3 Perovskite Laser.

  Qiuyu Shang;Meili Li;Liyun Zhao;Dingwei Chen

  192
  Citations

• Extended vapor–liquid–solid growth and field emission properties of aluminium nitride nanowires

  Qiang Wu;Zheng Hu;Xizhang Wang;Yinong Lu

  160
  Citations

• High-quality AlN epitaxy on nano-patterned sapphire substrates prepared by nano-imprint lithography.

  Lisheng Zhang;Fujun Xu;Jiaming Wang;Chenguang He

  136
  Citations

• Microstructure and origin of dislocation etch pits in GaN epilayers grown by metal organic chemical vapor deposition

  L. Lu;Z. Y. Gao;B. Shen;F. J. Xu

  135
  Citations

• Electronic and optical properties of novel carbon allotropes

  Zhanyu Wang;F. Dong;B. Shen;R. J. Zhang

  128
  Citations

• Tailoring MoS2 Valley-Polarized Photoluminescence with Super Chiral Near-Field

  Ziwei Li;Changxu Liu;Xin Rong;Yang Luo

  126
  Citations

• Interface/border trap characterization of Al2O3/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer

  Shenghou Liu;Shu Yang;Zhikai Tang;Qimeng Jiang

  117
  Citations

• High-Electron-Mobility InN Layers Grown by Boundary-Temperature-Controlled Epitaxy

  Xinqiang Wang;Shitao Liu;Nan Ma;Li Feng

  113
  Citations

• Ultrathin-Barrier AlGaN/GaN Heterostructure: A Recess-Free Technology for Manufacturing High-Performance GaN-on-Si Power Devices

  Sen Huang;Xinyu Liu;Xinhua Wang;Xuanwu Kang

  110
  Citations

• Metal–semiconductor–metal GaN ultraviolet photodetectors on Si(111)

  Z. M. Zhao;R. L. Jiang;P. Chen;D. J. Xi

  105
  Citations

• Plasmonic-Functionalized Broadband Perovskite Photodetector

  Bowen Du;Wenqiang Yang;Qiao Jiang;Hangyong Shan

  105
  Citations

• Graphene/GaN diodes for ultraviolet and visible photodetectors

  Fang Lin;Shao-Wen Chen;Jie Meng;Geoffrey Tse

  95
  Citations

• Graphene/GaN diodes for ultraviolet and visible photodetectors

  Fang Lin;Shaowen Chen;Jie Meng;Geoffrey Tse

  95
  Citations

• Effect of asymmetric Schottky barrier on GaN-based metal-semiconductor-metal ultraviolet detector

  Unknown

  93
  Citations

• Self-Learning Perfect Optical Chirality via a Deep Neural Network.

  Yu Li;Youjun Xu;Meiling Jiang;Bowen Li

  93
  Citations

• High-Output-Power Ultraviolet Light Source from Quasi-2D GaN Quantum Structure

  Xin Rong;Xinqiang Wang;Sergey V. Ivanov;Xinhe Jiang

  90
  Citations

• 900 V/1.6 ${ m m}\Omega\cdot{ m cm}^{2}$ Normally Off ${ m Al}_{2}{ m O}_{3}/{ m GaN}$ MOSFET on Silicon Substrate

  Maojun Wang;Ye Wang;Chuan Zhang;Bing Xie

  88
  Citations

• Sec-Eliminating the SARS-CoV-2 by AlGaN Based High Power Deep Ultraviolet Light Source.

  Shangfeng Liu;Wei Luo;Dan Li;Ye Yuan

  85
  Citations