World's Best Scientists 2026 revealed!

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Materials Science

D-Index
52
Citations
11091
World Ranking
9494
National Ranking
2699

Best Publications

  • Generation and electric control of spin–valley-coupled circular photogalvanic current in WSe2

    Hongtao Yuan;Hongtao Yuan;Xinqiang Wang;Biao Lian;Haijun Zhang

  • High-Performance Normally-Off ${ m Al}_{2}{ m O}_{3}/{ m GaN}$ MOSFET Using a Wet Etching-Based Gate Recess Technique

    Ye Wang;Maojun Wang;Bing Xie;Cheng P. Wen

  • Role of the Exciton-Polariton in a Continuous-Wave Optically Pumped CsPbBr3 Perovskite Laser.

    Qiuyu Shang;Meili Li;Liyun Zhao;Dingwei Chen

  • Extended vapor–liquid–solid growth and field emission properties of aluminium nitride nanowires

    Qiang Wu;Zheng Hu;Xizhang Wang;Yinong Lu

  • High-quality AlN epitaxy on nano-patterned sapphire substrates prepared by nano-imprint lithography.

    Lisheng Zhang;Fujun Xu;Jiaming Wang;Chenguang He

  • Microstructure and origin of dislocation etch pits in GaN epilayers grown by metal organic chemical vapor deposition

    L. Lu;Z. Y. Gao;B. Shen;F. J. Xu

  • Electronic and optical properties of novel carbon allotropes

    Zhanyu Wang;F. Dong;B. Shen;R. J. Zhang

  • Tailoring MoS2 Valley-Polarized Photoluminescence with Super Chiral Near-Field

    Ziwei Li;Changxu Liu;Xin Rong;Yang Luo

  • Interface/border trap characterization of Al2O3/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer

    Shenghou Liu;Shu Yang;Zhikai Tang;Qimeng Jiang

  • High-Electron-Mobility InN Layers Grown by Boundary-Temperature-Controlled Epitaxy

    Xinqiang Wang;Shitao Liu;Nan Ma;Li Feng

  • Ultrathin-Barrier AlGaN/GaN Heterostructure: A Recess-Free Technology for Manufacturing High-Performance GaN-on-Si Power Devices

    Sen Huang;Xinyu Liu;Xinhua Wang;Xuanwu Kang

  • Metal–semiconductor–metal GaN ultraviolet photodetectors on Si(111)

    Z. M. Zhao;R. L. Jiang;P. Chen;D. J. Xi

  • Plasmonic-Functionalized Broadband Perovskite Photodetector

    Bowen Du;Wenqiang Yang;Qiao Jiang;Hangyong Shan

  • Graphene/GaN diodes for ultraviolet and visible photodetectors

    Fang Lin;Shao-Wen Chen;Jie Meng;Geoffrey Tse

  • Graphene/GaN diodes for ultraviolet and visible photodetectors

    Fang Lin;Shaowen Chen;Jie Meng;Geoffrey Tse

  • Effect of asymmetric Schottky barrier on GaN-based metal-semiconductor-metal ultraviolet detector

    Unknown

  • Self-Learning Perfect Optical Chirality via a Deep Neural Network.

    Yu Li;Youjun Xu;Meiling Jiang;Bowen Li

  • High-Output-Power Ultraviolet Light Source from Quasi-2D GaN Quantum Structure

    Xin Rong;Xinqiang Wang;Sergey V. Ivanov;Xinhe Jiang

  • 900 V/1.6 ${ m m}\Omega\cdot{ m cm}^{2}$ Normally Off ${ m Al}_{2}{ m O}_{3}/{ m GaN}$ MOSFET on Silicon Substrate

    Maojun Wang;Ye Wang;Chuan Zhang;Bing Xie

  • Sec-Eliminating the SARS-CoV-2 by AlGaN Based High Power Deep Ultraviolet Light Source.

    Shangfeng Liu;Wei Luo;Dan Li;Ye Yuan

Frequent Co-Authors

Xizhang Wang
Xizhang Wang Nanjing University
Kaifu Huo
Kaifu Huo Wuhan University of Science and Technology
Zheng Hu
Zheng Hu Nanjing University

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