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IEEE

The 29th edition of the IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

Location: Singapore , Singapore

Submission deadline: 2/25/2022

Conference dates: 7/18/2022 - 7/20/2022

Research H-index
5

Ranking & Metrics

Discipline name Position Best Scientists Publications D-Index
Materials Science 80 27 38 3
Electronics and Electrical Engineering 480 38 69 4
Engineering and Technology 183 9 18 4

Call for Papers

Product Test and Diagnostics: Embedded BIST and DFT test
and diagnosis, Reliability testing, Silicon failure debug by test and
yield engineering methodologies, Yield analysis and optimization,
Defect-oriented testing, Protocol-aware testing, Test-to-Design
Feedback, Mixed signal and analog tests.
Sample Preparation, Metrology and Defect Characterization:
Device de-processing, Ion beam / TEM sample preparation,
Metrology, Defect inspection, Test chips.
Case Studies on Fault Isolation: Die / Board / System-level
electrical FA, Electrical characterization and nanoprobing.
Case Studies on Physical Failure Analysis: Die / Board /
System-level physical FA, Design for manufacturing, Construction
Analysis, Reverse engineering.
Package-Level Failure Analysis: 2.xD/3D/SiP Package FA,
Magnetic/acoustic applications, 2.xD/3D X-ray, Lock-in
thermography, FTIR, Non-destructive failure analysis, Workflows.
Advanced Electrical Fault Isolation Techniques: Advanced
methodologies in photon and laser-based microscopy techniques,
Dynamic techniques, Acoustic microscopy, Magnetic imaging,
Nanoprobing, AFP, EBAC/EBIC.
Advanced Physical Failure Analysis Techniques: Advanced
methodologies in PFA, Advanced optical/Ion beam approaches,
Plasma/Laser FIB, Spectroscopy (EDX/EELS) techniques,
Scanning probe microscopy, Circuit-edits, De-layering recipes and
innovations, Tomography.
ESD, Latchup and Reliability for Space Applications:
Component and system level ESD design: modeling and
simulation, Single Event Effect (SEE) testing and analysis (particle
accelerator, Pulsed Laser, Nanofocus X-ray) on COTS for New
Space, Total Ionising Dose and Displacement Damage.
IPFA 2022 is devoted to the fundamental understanding of the electrical and physical characterization techniques and
associated technologies that assist in probing the nature of wear-out and failure in conventional and new CMOS devices. The
Technical Program Committee is inviting papers related, but not limited to, the following areas:
AI for Failure Analysis and Reliability: Artificial intelligence (AI)
for FA – fault detection, Visual / image analytics, Pattern
recognition, Signal Processing, Machine learning for prognosis and
reliability. Exploring reliability assessment and quantification for
new applications (e.g. neuromorphic devices and AI accelerator).
Hardware Assurance: Semi-Invasive and Invasive Analysis for
attack of encryption system, PUF Circuit Characterization and
Evaluation, Die-Level Reverse Engineering, Counterfeit Electronics
Detection, Hardware Trojan localization.
Photonic Devices (Display, Lighting and Photovoltaic)
Reliability and Failure Analysis: Degradation studies on display
modules, LED, Solar cells made of silicon, CdTe, CIGS, organic
materials, multi-junction, perovskite etc., Infrared photodetectors,
Waveguides.
Transistor and NVM Reliability: Gate oxide/High-κ reliability,
PBTI/NBTI, Hot carrier, Random telegraph noise and single dopant
effects, Self-Heating in sub-10 nm CMOS, GAA FET / RFSOI/
HBM/stack DRAM device reliability, Process and stress-induced
reliability issues and variability, Non-volatile memory reliability (
PCRAM, RRAM, STT-MRAM, Ferroelectric devices, MRAM), 2D
material and device reliability.
Interconnect and Packaging Reliability: TDDB dielectrics,
Electromigration, stress migration, cracking, corrosion, and fatigue
in bond pads, Reliability of 3DIC/ TSV/ MEMS, Heterogeneous
Integration in SiP, Thermo-mechanical stress, Power dissipation
issues, Wafer warpage, Wire bonding, Wafer bonding technology,
yield & reliability.
High Power Electronics / Wide Bandgap Device Reliability &
Failure Analysis: Reliability of devices based on GaAs, GaN, SiC
and Ga2O3 systems, Trap-related degradation, Materials-related
defect characterization, Process variability, III-V/Si integration.

Overview

This comprehensive ranking presents a curated list of scientific conferences within the field of Engineering and Technology, offering an authoritative resource for researchers, academics, and professionals. The ranking is the result of in-depth analysis conducted by Research.com—recognized since 2014 as a leading platform for science research across all major fields, including Engineering and Technology—known for providing trusted data on scientific contributions.

Positions in this ranking are determined by a unique bibliometric score meticulously developed by Research.com. The score is calculated by integrating the estimated h-index of conferences with the number of leading scientists who have participated in each conference over the past three years. This dual approach ensures that both the scholarly impact and the caliber of contributors are rigorously evaluated.

The current edition of the ranking encompasses Impact Score values compiled as of 2024-11-27. The selection and analysis process was exceptionally thorough, involving the examination of over 2,262 conferences, shortlisted from a detailed inspection of 26,934 scientific documents published over the last three years. These documents represent the work of 9,385 distinguished and widely respected scientists active in the domain of Engineering and Technology.

The methodology applied reflects a deep and nuanced understanding of the dynamics within scientific publishing and conference participation. For those interested in a comprehensive overview of how ranking scores are computed, please refer to our detailed Methodology Page.

Papers citation over time

A key indicator for each conference is its effectiveness in reaching other researchers with the papers published at that venue.

The chart below presents the interquartile range (first quartile 25%, median 50% and third quartile 75%) of the number of citations of articles over time.

The top authors publishing at International Symposium on the Physical and Failure Analysis of Integrated Circuits (based on the number of publications) are:

  • Philippe Perdu (27 papers) published 1 paper at the last edition,
  • Ming-Dou Ker (24 papers) absent at the last edition,
  • C. K. Maiti (20 papers) absent at the last edition,
  • J.M. Chin (19 papers) absent at the last edition,
  • Jeffrey Lam (18 papers) published 2 papers at the last edition, 5 less than at the previous edition.

The overall trend for top authors publishing at this conference is outlined below. The chart shows the number of publications at each edition of the conference for top authors.

Only papers with recognized affiliations are considered

The top affiliations publishing at International Symposium on the Physical and Failure Analysis of Integrated Circuits (based on the number of publications) are:

  • National Chiao Tung University (64 papers) published 5 papers at the last edition, 15 less than at the previous edition,
  • Chartered Semiconductor Manufacturing (63 papers) absent at the last edition,
  • GlobalFoundries (60 papers) published 13 papers at the last edition, 6 less than at the previous edition,
  • Advanced Micro Devices (52 papers) published 4 papers at the last edition the same number as at the previous edition,
  • Nanyang Technological University (52 papers) published 1 paper at the last edition, 2 less than at the previous edition.

The overall trend for top affiliations publishing at this conference is outlined below. The chart shows the number of publications at each edition of the conference for top affiliations.

Publication chance based on affiliation

The publication chance index shows the ratio of articles published by the best research institutions at the conference edition to all articles published within that conference. The best research institutions were selected based on the largest number of articles published during all editions of the conference.

The chart below presents the percentage ratio of articles from top institutions (based on their ranking of total papers).Top affiliations were grouped by their rank into the following tiers: top 1-10, top 11-20, top 21-50, and top 51+. Only articles with a recognized affiliation are considered.

During the most recent 2016 edition, 13.13% of publications had an unrecognized affiliation. Out of the publications with recognized affiliations, 40.70% were posted by at least one author from the top 10 institutions publishing at the conference. Another 20.93% included authors affiliated with research institutions from the top 11-20 affiliations. Institutions from the 21-50 range included 12.79% of all publications and 25.58% were from other institutions.

Returning Authors Index

A very common phenomenon observed among researchers publishing scientific articles is the intentional selection of conferences they have already attended in the past. In particular, it is worth analyzing the case when the authors participate in the same conference from year to year.

The Returning Authors Index presented below illustrates the ratio of authors who participated in both a given as well as the previous edition of the conference in relation to all participants in a given year.

Returning Institution Index

The graph below shows the Returning Institution Index, illustrating the ratio of institutions that participated in both a given and the previous edition of the conference in relation to all affiliations present in a given year.

The experience to innovation index

Our experience to innovation index was created to show a cross-section of the experience level of authors publishing at a conference. The index includes the authors publishing at the last edition of a conference, grouped by total number of publications throughout their academic career (P) and the total number of citations of these publications ever received (C).

The group intervals were selected empirically to best show the diversity of the authors' experiences, their labels were selected as a convenience, not as judgment. The authors were divided into the following groups:

  • Novice - P < 5 or C < 25 (the number of publications less than 5 or the number of citations less than 25),
  • Competent - P < 10 or C < 100 (the number of publications less than 10 or the number of citations less than 100),
  • Experienced - P < 25 or C < 625 (the number of publications less than 25 or the number of citations less than 625),
  • Master - P < 50 or C < 2500 (the number of publications less than 50 or the number of citations less than 2500),
  • Star - P ≥ 50 and C ≥ 2500 (both the number of publications greater than 50 and the number of citations greater than 2500).

The chart below illustrates experience levels of first authors in cases of publications with multiple authors.

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Best Scientists who published in this Conference