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Tsuguo Fukuda

Tsuguo Fukuda

D-Index & Metrics

Chemistry

D-Index
68
Citations
19067
World Ranking
6443
National Ranking
418

Overview

Tsuguo Fukuda is a researcher affiliated with Tohoku University in Japan. Their work primarily spans the fields of Engineering and Materials Science, with significant contributions focused on Mechanical Engineering, Materials Chemistry, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, and Condensed Matter Physics.

The scientist's research topics are centered on GaN-based semiconductor devices and materials, ZnO doping and properties, magnetic properties and applications, microstructure and mechanical properties of steels, Ga2O3 and related materials, acoustic wave resonator technologies, and innovative energy harvesting technologies.

Frequent collaborators in their academic career include Kazumasa Sugiyama, Toru Kawamata, Nobuhiko Sarukura, Shigeru Suzuki, and Tsuyoshi Kumagai.

Tsuguo Fukuda has contributed extensively to publications, predominantly featuring in the Journal of Crystal Growth, with eleven publications. Other venues where their work has appeared include the SSRN Electronic Journal, IEEE Transactions on Magnetics, Applied Physics Express, and Crystals.

Representative recent papers authored by Tsuguo Fukuda include:

  • Growth of bulk single crystal ScAlMgO4 boules and GaN films on ScAlMgO4 substrates for GaN-based optical devices, high-power and high-frequency transistors, 2021, Journal of Crystal Growth
  • Direct growth of GaN film on ScAlMgO4 substrate by radio-frequency plasma-excited molecular beam epitaxy, 2023, Applied Physics Express

Best Publications

  • Blue shift in ultraviolet absorption spectra of monodisperse CeO2−x nanoparticles

    S. Tsunekawa;T. Fukuda;A. Kasuya

  • Growth of the 2-in-size bulk ZnO single crystals by the hydrothermal method

    Eriko Ohshima;Hiraku Ogino;Ikuo Niikura;Katsumi Maeda

  • Growth of 2 inch ZnO bulk single crystal by the hydrothermal method

    Katsumi Maeda;Mitsuru Sato;Ikuo Niikura;Tsuguo Fukuda

  • Crystal growth technology

    Hans J. Scheel;Tsuguo Fukuda

  • Hydrothermal synthesis of MoS2 nanowires

    Wen-Jun Li;Er-Wei Shi;Jung-Min Ko;Zhi-zhan Chen

  • Growth and characterization of lanthanum gallium silicate La3Ga5SiO14 single crystals for piezoelectric applications

    Kiyoshi Shimamura;Hiroaki Takeda;Takuya Kohno;Tsuguo Fukuda

  • Fiber Crystal Growth From the Melt

    P. Rudolph;T. Fukuda

  • Floating zone growth of β-Ga2O3: A new window material for optoelectronic device applications

    Y. Tomm;J. M. Ko;Akira Yoshikawa;T. Fukuda

  • Growth and ultraviolet application of Li2B4O7 crystals: Generation of the fourth and fifth harmonics of Nd:Y3Al5O12 lasers

    R. Komatsu;T. Sugawara;K. Sassa;N. Sarukura

  • Photo‐ and radioluminescence of Pr‐doped Lu3Al5O12 single crystal

    M. Nikl;H. Ogino;A. Krasnikov;A. Beitlerova

  • Challenge and study for developing of novel single crystalline optical materials using micro-pulling-down method

    Akira Yoshikawa;Martin Nikl;Georges Boulon;Tsuguo Fukuda

  • Crystal growth of dislocation-free LiNbO3 single crystals by micro pulling down method

    Dae Ho Yoon;Ichiro Yonenaga;Tsuguo Fukuda;Norio Ohnishi

  • Antisite defect-free Lu3(GaxAl1−x)5O12:Pr scintillator

    M. Nikl;J. Pejchal;E. Mihokova;J. A. Mares

  • Interpretation of XPS O (1s) in Mixed Oxides Proved on Mixed Perovskite Crystals

    Dorota A. Pawlak;Masahiko Ito;Masaoki Oku;Kiyoshi Shimamura

  • Crystal growth of GaN by ammonothermal method

    Akira Yoshikawa;E. Ohshima;T. Fukuda;H. Tsuji

  • Solvothermal growth of ZnO

    Dirk Ehrentraut;Hideto Sato;Yuji Kagamitani;Hiroki Sato

  • Scintillation characteristics of Pr-doped Lu3Al5O12 single crystals

    H. Ogino;A. Yoshikawa;M. Nikl;K. Kamada

  • Growth and scintillation properties of Pr-doped Lu3Al5O12 crystals

    Hiraku Ogino;Akira Yoshikawa;Martin Nikl;Aleksei Krasnikov

  • Band structures of perovskite-like fluorides for vacuum-ultraviolet-transparent lens materials

    Takeshi Nishimatsu;Noriaki Terakubo;Hiroshi Mizuseki;Yoshiyuki Kawazoe

  • High Thermal Conductivity of Gallium Nitride (GaN) Crystals Grown by HVPE Process

    Hiroyuki Shibata;Yoshio Waseda;Hiromichi Ohta;Kazumasa Kiyomi

Frequent Co-Authors

Akira Yoshikawa
Akira Yoshikawa Tohoku University
Kiyoshi Shimamura
Kiyoshi Shimamura National Institute for Materials Science
Martin Nikl
Martin Nikl Czech Academy of Sciences
Jinhua Ye
Jinhua Ye National Institute for Materials Science
Georges Boulon
Georges Boulon Claude Bernard University Lyon 1
Yoshiyuki Kawazoe
Yoshiyuki Kawazoe Tohoku University
Hiroshi Mizuseki
Hiroshi Mizuseki Korea Institute of Science and Technology
Yannick Guyot
Yannick Guyot Claude Bernard University Lyon 1
Masahiro Hirano
Masahiro Hirano Tokyo Institute of Technology
Hideo Hosono
Hideo Hosono Tokyo Institute of Technology

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