Sungmin Yoon

Best Publications

• 21.2: Al and Sn-Doped Zinc Indium Oxide Thin Film Transistors for AMOLED Back-Plane

  Doo-Hee Cho;Shinhyuk Yang;Sang-Hee Ko Park;Chunwon Byun

  1488
  Citations

• Photon-accelerated negative bias instability involving subgap states creation in amorphous In–Ga–Zn–O thin film transistor

  Himchan Oh;Sung-Min Yoon;Min Ki Ryu;Chi-Sun Hwang

  390
  Citations

• High‐Mobility Nonvolatile Memory Thin‐Film Transistors with a Ferroelectric Polymer Interfacing ZnO and Pentacene Channels

  Kwang H. Lee;Gyubaek Lee;Kimoon Lee;Min Suk Oh

  141
  Citations

• Fully Transparent Non‐volatile Memory Thin‐Film Transistors Using an Organic Ferroelectric and Oxide Semiconductor Below 200 °C

  Sung‐Min Yoon;Shinhyuk Yang;Chunwon Byun;Sang‐Hee K. Park

  125
  Citations

• Transition of dominant instability mechanism depending on negative gate bias under illumination in amorphous In-Ga-Zn-O thin film transistor

  Himchan Oh;Sung-Min Yoon;Min Ki Ryu;Chi-Sun Hwang

  111
  Citations

• The flexible non-volatile memory devices using oxide semiconductors and ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene)

  Gwang-Geun Lee;Eisuke Tokumitsu;Sung-Min Yoon;Yoshihisa Fujisaki

  101
  Citations

• Low-Temperature Processed Flexible In–Ga–Zn–O Thin-Film Transistors Exhibiting High Electrical Performance

  Shinhyuk Yang;Jun Yong Bak;Sung-Min Yoon;Min Ki Ryu

  82
  Citations

• Effects of Deposition Temperature on the Device Characteristics of Oxide Thin-Film Transistors Using In–Ga–Zn–O Active Channels Prepared by Atomic-Layer Deposition

  Unknown

  81
  Citations

• Improvements in the bending performance and bias stability of flexible InGaZnO thin film transistors and optimum barrier structures for plastic poly(ethylene naphthalate) substrates

  Min-Ji Park;Da-Jeong Yun;Min-Ki Ryu;Jong-Heon Yang

  71
  Citations

• Nonvolatile memory thin-film transistors using an organic ferroelectric gate insulator and an oxide semiconducting channel

  Sung-Min Yoon;Shinhyuk Yang;Chun-Won Byun;Soon-Won Jung

  59
  Citations

• Investigations on the bias temperature stabilities of oxide thin film transistors using In–Ga–Zn–O channels prepared by atomic layer deposition

  Unknown

  58
  Citations

• Impact of interface controlling layer of Al2O3 for improving the retention behaviors of In-Ga-Zn oxide-based ferroelectric memory transistor

  Sung-Min Yoon;Shin-Hyuk Yang;Soon-Won Jung;Chun-Won Byun

  58
  Citations

• Vertical Channel ZnO Thin-Film Transistors Using an Atomic Layer Deposition Method

  Chi-Sun Hwang;Sang-Hee Ko Park;Himchan Oh;Min-Ki Ryu

  54
  Citations

• Flexible nonvolatile organic ferroelectric memory transistors fabricated on polydimethylsiloxane elastomer

  Soon-Won Jung;Jeong-Seon Choi;Jae Bon Koo;Chan Woo Park

  51
  Citations

• Low-voltage-operated top-gate polymer thin-film transistors with high capacitance poly(vinylidene fluoride-trifluoroethylene)/poly(methyl methacrylate) dielectrics

  Soon-Won Jung;Kang-Jun Baeg;Sung-Min Yoon;In-Kyu You

  44
  Citations

• Highly Robust Flexible Vertical-Channel Thin-Film Transistors Using Atomic-Layer-Deposited Oxide Channels and Zeocoat Spacers on Ultrathin Polyimide Substrates

  Unknown

  42
  Citations

• Impact of Strategic Approaches for Improving the Device Performance of Mesa-shaped Nanoscale Vertical-Channel Thin-Film Transistors Using Atomic-Layer Deposited In–Ga–Zn–O Channel Layers

  Unknown

  40
  Citations

• Highly Bendable In-Ga-ZnO Thin Film Transistors by Using a Thermally Stable Organic Dielectric Layer.

  Yogeenth Kumaresan;Yusin Pak;Namsoo Lim;Yonghun Kim

  40
  Citations

• Nonvolatile Memory Thin-Film Transistors Using Biodegradable Chicken Albumen Gate Insulator and Oxide Semiconductor Channel on Eco-Friendly Paper Substrate

  So-Jung Kim;Da-Bin Jeon;Jung-Ho Park;Min-Ki Ryu

  37
  Citations

• Origin of Degradation Phenomenon under Drain Bias Stress for Oxide Thin Film Transistors using IGZO and IGO Channel Layers

  Jun Yong Bak;Youngho Kang;Shinhyuk Yang;Ho-Jun Ryu

  36
  Citations