Sungmin Yoon

Sungmin Yoon publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Sungmin Yoon sits on this spectrum.

Sungmin Yoon D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Sungmin Yoon sits on this spectrum.

Best Publications

• 21.2: Al and Sn-Doped Zinc Indium Oxide Thin Film Transistors for AMOLED Back-Plane

  Doo-Hee Cho;Shinhyuk Yang;Sang-Hee Ko Park;Chunwon Byun

  1488
  Citations

• Photon-accelerated negative bias instability involving subgap states creation in amorphous In–Ga–Zn–O thin film transistor

  Himchan Oh;Sung-Min Yoon;Min Ki Ryu;Chi-Sun Hwang

  390
  Citations

• High‐Mobility Nonvolatile Memory Thin‐Film Transistors with a Ferroelectric Polymer Interfacing ZnO and Pentacene Channels

  Kwang H. Lee;Gyubaek Lee;Kimoon Lee;Min Suk Oh

  141
  Citations

• Fully Transparent Non‐volatile Memory Thin‐Film Transistors Using an Organic Ferroelectric and Oxide Semiconductor Below 200 °C

  Sung‐Min Yoon;Shinhyuk Yang;Chunwon Byun;Sang‐Hee K. Park

  125
  Citations

• Transition of dominant instability mechanism depending on negative gate bias under illumination in amorphous In-Ga-Zn-O thin film transistor

  Himchan Oh;Sung-Min Yoon;Min Ki Ryu;Chi-Sun Hwang

  111
  Citations

• The flexible non-volatile memory devices using oxide semiconductors and ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene)

  Gwang-Geun Lee;Eisuke Tokumitsu;Sung-Min Yoon;Yoshihisa Fujisaki

  101
  Citations

• Low-Temperature Processed Flexible In–Ga–Zn–O Thin-Film Transistors Exhibiting High Electrical Performance

  Shinhyuk Yang;Jun Yong Bak;Sung-Min Yoon;Min Ki Ryu

  82
  Citations

• Effects of Deposition Temperature on the Device Characteristics of Oxide Thin-Film Transistors Using In–Ga–Zn–O Active Channels Prepared by Atomic-Layer Deposition

  Unknown

  81
  Citations

• Improvements in the bending performance and bias stability of flexible InGaZnO thin film transistors and optimum barrier structures for plastic poly(ethylene naphthalate) substrates

  Min-Ji Park;Da-Jeong Yun;Min-Ki Ryu;Jong-Heon Yang

  71
  Citations

• Nonvolatile memory thin-film transistors using an organic ferroelectric gate insulator and an oxide semiconducting channel

  Sung-Min Yoon;Shinhyuk Yang;Chun-Won Byun;Soon-Won Jung

  59
  Citations

• Investigations on the bias temperature stabilities of oxide thin film transistors using In–Ga–Zn–O channels prepared by atomic layer deposition

  Unknown

  58
  Citations

• Impact of interface controlling layer of Al2O3 for improving the retention behaviors of In-Ga-Zn oxide-based ferroelectric memory transistor

  Sung-Min Yoon;Shin-Hyuk Yang;Soon-Won Jung;Chun-Won Byun

  58
  Citations

• Vertical Channel ZnO Thin-Film Transistors Using an Atomic Layer Deposition Method

  Chi-Sun Hwang;Sang-Hee Ko Park;Himchan Oh;Min-Ki Ryu

  54
  Citations

• Flexible nonvolatile organic ferroelectric memory transistors fabricated on polydimethylsiloxane elastomer

  Soon-Won Jung;Jeong-Seon Choi;Jae Bon Koo;Chan Woo Park

  51
  Citations

• Low-voltage-operated top-gate polymer thin-film transistors with high capacitance poly(vinylidene fluoride-trifluoroethylene)/poly(methyl methacrylate) dielectrics

  Soon-Won Jung;Kang-Jun Baeg;Sung-Min Yoon;In-Kyu You

  44
  Citations

• Highly Robust Flexible Vertical-Channel Thin-Film Transistors Using Atomic-Layer-Deposited Oxide Channels and Zeocoat Spacers on Ultrathin Polyimide Substrates

  Unknown

  42
  Citations

• Impact of Strategic Approaches for Improving the Device Performance of Mesa-shaped Nanoscale Vertical-Channel Thin-Film Transistors Using Atomic-Layer Deposited In–Ga–Zn–O Channel Layers

  Unknown

  40
  Citations

• Highly Bendable In-Ga-ZnO Thin Film Transistors by Using a Thermally Stable Organic Dielectric Layer.

  Yogeenth Kumaresan;Yusin Pak;Namsoo Lim;Yonghun Kim

  40
  Citations

• Nonvolatile Memory Thin-Film Transistors Using Biodegradable Chicken Albumen Gate Insulator and Oxide Semiconductor Channel on Eco-Friendly Paper Substrate

  So-Jung Kim;Da-Bin Jeon;Jung-Ho Park;Min-Ki Ryu

  37
  Citations

• Origin of Degradation Phenomenon under Drain Bias Stress for Oxide Thin Film Transistors using IGZO and IGO Channel Layers

  Jun Yong Bak;Youngho Kang;Shinhyuk Yang;Ho-Jun Ryu

  36
  Citations