World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
63
Citations
14907
World Ranking
6141
National Ranking
1847

Chemistry

D-Index
63
Citations
14147
World Ranking
8428
National Ranking
1470

Beng S. Ong publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Beng S. Ong sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 184 publications — 25th percentile

25% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Beng S. Ong D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Beng S. Ong sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 63 D-Index — 53rd percentile

53% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Beng S. Ong is affiliated with Hong Kong Baptist University in China. Their research primarily spans the fields of Engineering and Materials Science, with a particular focus on subfields such as Electrical and Electronic Engineering, Materials Chemistry, Polymers and Plastics, Atomic and Molecular Physics, and Optics, as well as Bioengineering.

The scientist's main topics of work include:

  • Perovskite Materials and Applications
  • Solid State Laser Technologies
  • Conducting polymers and applications
  • Organic Electronics and Photovoltaics
  • Organic Light-Emitting Diodes Research
  • Optical properties and cooling technologies in crystalline materials
  • Semiconductor Lasers and Optical Devices

Beng S. Ong has published in several research venues, with the most frequent being:

  • arXiv (Cornell University)
  • Science Bulletin
  • Photonics Research
  • Research Square (Research Square)
  • The Cambridge Structural Database

Recent papers authored or co-authored by Beng S. Ong include:

  • Atomic-level chemical reaction promoting external quantum efficiency of organic photomultiplication photodetector exceeding 108% for weak-light detection, 2023, Science Bulletin
  • Passivation of degradation path enables high performance perovskite nanoplatelet lasers with high operational stability, 2022, Photonics Research
  • Long life Perovskite Nanoplatelet Lasers with high quality factor enabled through engineering degradation pathways, 2021, Research Square (Research Square)
  • CCDC 2428181: Experimental Crystal Structure Determination, 2025, The Cambridge Structural Database
  • High-responsivity, High-detectivity Photomultiplication Organic Photodetector Realized by a Metal-Insulator-Semiconductor Tunneling Junction, 2021, arXiv (Cornell University)

The scientist frequently collaborates with colleagues including:

  • Yuying Hao
  • Guohui Li
  • Yanxia Cui
  • Huihui Pi
  • Rong Wen

Best Publications

  • High-performance semiconducting polythiophenes for organic thin-film transistors.

    Beng S. Ong;Yiliang Wu;Ping Liu;Sandra Gardner

  • A stable solution-processed polymer semiconductor with record high-mobility for printed transistors

    Jun Li;Yan Zhao;Huei Shuan Tan;Yunlong Guo

  • Facile Synthesis of Silver Nanoparticles Useful for Fabrication of High-Conductivity Elements for Printed Electronics

    Yuning Li;Yiliang Wu;Beng S. Ong

  • Stable, solution-processed, high-mobility ZnO thin-film transistors.

    Beng S. Ong;Chensha Li;Yuning Li;Yiliang Wu

  • Novel high Tg hole-transport molecules based on indolo[3,2-b]carbazoles for organic light-emitting devices

    Nan-Xing Hu;Shuang Xie;Zoran D Popovic;Beng Ong

  • Low-Temperature, Solution-Processed, High-Mobility Polymer Semiconductors for Thin-Film Transistors

    Hualong Pan;Yuning Li;Yiliang Wu;Ping Liu

  • Indolo[3,2-b]carbazole-Based Thin-Film Transistors with High Mobility and Stability

    Yiliang Wu;Yuning Li;Sandra Gardner;Beng S Ong

  • Structurally Ordered Polythiophene Nanoparticles for High‐Performance Organic Thin‐Film Transistors

    Beng S. Ong;Yiliang Wu;Ping Liu;Sandra Gardner

  • All jet-printed polymer thin-film transistor active-matrix backplanes

    A. C. Arias;S. E. Ready;R. Lujan;W. S. Wong

  • Intrinsic hole mobility and trapping in a regioregular poly(thiophene)

    A. Salleo;T. W. Chen;A. R. Völkel;Y. Wu

  • Thiophene Polymer Semiconductors for Organic Thin‐Film Transistors

    Beng S. Ong;Beng S. Ong;Yiliang Wu;Yuning Li;Ping Liu

  • Polythiophenes and devices thereof

    Beng S. Ong;Ping Liu;Lu Jiang;Yu Qi

  • Stabilized silver nanoparticle composition

    Yuning Li;Yiliang Wu;Beng S Ong

  • Organic electroluminescent devices

    Shuang Xie;Nan-Xing Hu;Zoran D. Popovic;Ah-Mee Hor

  • Novel Peripherally Substituted Indolo[3,2-b]carbazoles for High-Mobility Organic Thin-Film Transistors

    Yuning Li;Yiliang Wu;Sandra Gardner;Beng S. Ong

  • Enhanced efficiency of polymer solar cells by adding a high-mobility conjugated polymer

    Shenghua Liu;Peng You;Jinhua Li;Jun Li

  • High‐Performance Organic Thin‐Film Transistors with Solution‐Printed Gold Contacts

    Yiliang Wu;Yuning Li;Beng S. Ong;Ping Liu

  • Poly(2,5‐bis(2‐thienyl)‐3,6‐dialkylthieno [3,2‐b]thiophene)s—High‐Mobility Semiconductors for Thin‐Film Transistors

    Yuning Li;Yiliang Wu;Ping Liu;Maria Birau

  • Controlled orientation of liquid-crystalline polythiophene semiconductors for high-performance organic thin-film transistors

    Yiliang Wu;Ping Liu;Beng S. Ong;Tharan Srikumar

  • A simple and efficient approach to a printable silver conductor for printed electronics.

    Yiliang Wu;Yuning Li;Beng S. Ong

Frequent Co-Authors

Yiliang Wu
Yiliang Wu TE Connectivity (China)
Yuning Li
Yuning Li University of Waterloo
Shiping Zhu
Shiping Zhu Chinese University of Hong Kong, Shenzhen
Furong Zhu
Furong Zhu Hong Kong Baptist University
Michael L. Chabinyc
Michael L. Chabinyc University of California, Santa Barbara
Ni Zhao
Ni Zhao Chinese University of Hong Kong
Xiao Hu
Xiao Hu Nanyang Technological University
Jun Li
Jun Li National University of Singapore
Chang Ming Li
Chang Ming Li Suzhou University of Science and Technology
Mary B. Chan-Park
Mary B. Chan-Park Nanyang Technological University

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