World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
50
Citations
13330
World Ranking
10086
National Ranking
2834

Wei Liu publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Wei Liu sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 242 publications — 44th percentile

44% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Wei Liu D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Wei Liu sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 50 D-Index — 22nd percentile

22% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Best Publications

  • Role of metal contacts in designing high-performance monolayer n-type WSe2 field effect transistors.

    Wei Liu;Jiahao Kang;Deblina Sarkar;Yasin Khatami

  • MoS2 Field-Effect Transistor for Next-Generation Label-Free Biosensors

    Deblina Sarkar;Wei Liu;Xuejun Xie;Aaron C. Anselmo

  • A subthermionic tunnel field-effect transistor with an atomically thin channel.

    Deblina Sarkar;Xuejun Xie;Wei Liu;Wei Cao

  • Computational Study of Metal Contacts to Monolayer Transition-Metal Dichalcogenide Semiconductors

    Jiahao Kang;Wei Liu;Deblina Sarkar;Debdeep Jena

  • High-performance MoS2 transistors with low-resistance molybdenum contacts

    Jiahao Kang;Wei Liu;Kaustav Banerjee

  • Synthesis of high-quality monolayer and bilayer graphene on copper using chemical vapor deposition

    Wei Liu;Hong Li;Chuan Xu;Yasin Khatami

  • Functionalization of Transition Metal Dichalcogenides with Metallic Nanoparticles: Implications for Doping and Gas-Sensing

    Deblina Sarkar;Xuejun Xie;Jiahao Kang;Haojun Zhang

  • 2D Semiconductor FETs—Projections and Design for Sub-10 nm VLSI

    Wei Cao;Jiahao Kang;Deblina Sarkar;Wei Liu

  • Double wall carbon nanotubes promoted by sulfur in a floating iron catalyst CVD system

    Lijie Ci;Zhilong Rao;Zhenping Zhou;Dongsheng Tang

  • Cathode processes and materials for solid oxide fuel cells with proton conductors as electrolytes

    Ranran Peng;Tianzhi Wu;Wei Liu;Xingqin Liu

  • Protein Binding by Functionalized Multiwalled Carbon Nanotubes Is Governed by the Surface Chemistry of Both Parties and the Nanotube Diameter

    Qingxin Mu;Wei Liu;Yuehan Xing;Hongyu Zhou

  • A Compact Current–Voltage Model for 2D Semiconductor Based Field-Effect Transistors Considering Interface Traps, Mobility Degradation, and Inefficient Doping Effect

    Wei Cao;Jiahao Kang;Wei Liu;Kaustav Banerjee

  • Impact of Contact on the Operation and Performance of Back-Gated Monolayer MoS2 Field-Effect-Transistors.

    Wei Liu;Deblina Sarkar;Jiahao Kang;Wei Cao

  • Synthesis of monoclinic structured BiVO4 spindly microtubes in deep eutectic solvent and their application for dye degradation.

    Wei Liu;Yaqin Yu;Lixin Cao;Ge Su

  • A high performance cathode for proton conducting solid oxide fuel cells

    Zhiquan Wang;Wenqiang Yang;Shahid Pottachola Shafi;Lei Bi

  • Controllable and Rapid Synthesis of High-Quality and Large-Area Bernal Stacked Bilayer Graphene Using Chemical Vapor Deposition

    Wei Liu;Stephan Kraemer;Deblina Sarkar;Hong Li

  • Mechanical and electrical property improvement in CNT/Nylon composites through drawing and stretching

    Xin Wang;Philip D. Bradford;Wei Liu;Haibo Zhao

  • Large scale pattern graphene electrode for high performance in transparent organic single crystal field-effect transistors.

    Wei Liu;Biyun Li Jackson;Jing Zhu;Cong-Qin Miao

  • Na-doped p-type ZnO microwires.

    Wei Liu;Faxian Xiu;Ke Sun;Ya-Hong Xie

  • Fabrication and performance of a proton-conducting solid oxide fuel cell based on a thin BaZr0.8Y0.2O3−δ electrolyte membrane

    Wenping Sun;Litao Yan;Zhen Shi;Zhiwen Zhu

Frequent Co-Authors

Tao Yao
Tao Yao University of Science and Technology of China
Shiqiang Wei
Shiqiang Wei University of Science and Technology of China
Yuen Wu
Yuen Wu University of Science and Technology of China
Z. Hong Zhou
Z. Hong Zhou University of California, Los Angeles
Yue Lin
Yue Lin University of Science and Technology of China
Xusheng Zheng
Xusheng Zheng University of Science and Technology of China
David Mitlin
David Mitlin The University of Texas at Austin
Qinghua Liu
Qinghua Liu University of Science and Technology of China
Yi Xie
Yi Xie University of Science and Technology of China
Yadong Li
Yadong Li Tsinghua University

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