A. Kerber

Best Publications

• Origin of the threshold voltage instability in SiO 2 /HfO 2 dual layer gate dielectrics

  A. Kerber;E. Cartier;L. Pantisano;R. Degraeve

  442
  Citations

• Reliability Challenges for CMOS Technology Qualifications With Hafnium Oxide/Titanium Nitride Gate Stacks

  A. Kerber;E.A. Cartier

  248
  Citations

• Characterization of the V/sub T/-instability in SiO/sub 2//HfO/sub 2/ gate dielectrics

  A. Kerber;E. Cartier;L. Pantisano;M. Rosmeulen

  191
  Citations

• Passivation and interface state density of SiO2/HfO2-based/polycrystalline-Si gate stacks

  R. J. Carter;E. Cartier;A. Kerber;L. Pantisano

  166
  Citations

• On the thermal stability of atomic layer deposited TiN as gate electrode in MOS devices

  J. Westlinder;T. Schram;L. Pantisano;E. Cartier

  140
  Citations

• Stress-induced leakage current and defect generation in nFETs with HfO 2 /TiN gate stacks during positive-bias temperature stress

  Eduard Cartier;Andreas Kerber

  140
  Citations

• A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications

  S. Krishnan;U. Kwon;N. Moumen;M.W. Stoker

  125
  Citations

• Accurate model for time-dependent dielectric breakdown of high-k metal gate stacks

  Unknown

  124
  Citations

• Fundamental aspects of HfO 2 -based high-k metal gate stack reliability and implications on t inv -scaling

  E. Cartier;A. Kerber;T. Ando;M. M. Frank

  121
  Citations

• Understanding mobility mechanisms in extremely scaled HfO 2 (EOT 0.42 nm) using remote interfacial layer scavenging technique and V t -tuning dipoles with gate-first process

  T. Ando;M. M. Frank;K. Choi;C. Choi

  112
  Citations

• Charge trapping and dielectric reliability of SiO/sub 2/-Al/sub 2/O/sub 3/ gate stacks with TiN electrodes

  A. Kerber;E. Cartier;R. Degraeve;P.J. Roussel

  102
  Citations

• Voltage Ramp Stress for Bias Temperature Instability Testing of Metal-Gate/High- $k$ Stacks

  A. Kerber;S.A. Krishnan;E.A. Cartier

  98
  Citations

• Correlation between Stress-Induced Leakage Current (SILC) and the HfO/sub 2/ bulk trap density in a SiO/sub 2//HfO/sub 2/ stack

  F. Crupi;R. Degraeve;A. Kerber;D.H. Kwak

  97
  Citations

• Effect of bulk trap density on HfO/sub 2/ reliability and yield

  R. Degraeve;A. Kerber;P. Roussell;E. Cartier

  96
  Citations

• Reliability screening of high-k dielectrics based on voltage ramp stress

  Andreas Kerber;Luigi Pantisano;Anabela Veloso;Guido Groeseneken;Guido Groeseneken

  96
  Citations

• Si-doped aluminates for high temperature metal-gate CMOS: Zr-Al-Si-O, a novel gate dielectric for low power applications

  L. Manchanda;M.L. Green;R.B. van Dover;M.D. Morris

  88
  Citations

• Characterization of the VT Instability in SiO2/HfO2 Gate Dielectrics

  Andreas Kerber;E Cartier;Luigi Pantisano;Maarten Rosmeulen

  81
  Citations

• Charge Trapping and Dielectric Reliability of SiO2/Al2O3 Gate Stacks with TiN Electrodes

  Andreas Kerber;Eduard Cartier;Robin Degraeve;Philippe J. Roussel

  79
  Citations

• A study of relaxation current in high-/spl kappa/ dielectric stacks

  Zhen Xu;L. Pantisano;A. Kerber;R. Degraeve

  77
  Citations

• Characterization of Fast Relaxation During BTI Stress in Conventional and Advanced CMOS Devices With $\hbox{HfO}_{2}/\hbox{TiN}$ Gate Stacks

  A. Kerber;K. Maitra;A. Majumdar;M. Hargrove

  75
  Citations