| Discipline name | Position | Best Scientists | Publications | D-Index |
|---|---|---|---|---|
| Electronics and Electrical Engineering | 59 | 535 | 1784 | 44 |
| Physics | 101 | 27 | 74 | 19 |
| Materials Science | 175 | 397 | 990 | 40 |
The journal explores disciplines such as Optoelectronics, Electrical engineering, Electronic engineering, Transistor and MOSFET. While Optoelectronics is the focus of it, it also provided insights into the studies of Field-effect transistor and Voltage. The research on Electrical engineering discussed in IEEE Transactions on Electron Devices draws on the closely related field of Capacitance.
The journal dives deep in exploring the relationship between the study of Electronic engineering and Computational physics. IEEE Transactions on Electron Devices facilitates discussions on Transistor that incorporate concepts from other fields like Logic gate and Thin-film transistor. While work presented in the journal provided substantial information on MOSFET, it also covered topics in Silicon on insulator, Electron mobility, Condensed matter physics and Gate oxide.
The study on Condensed matter physics presented in the journal intersects with the topics under Electron. The studies on Bipolar junction transistor discussed can also contribute to research in the domains of Heterojunction and Common emitter. Silicon and Analytical chemistry are closely related fields of research discussed in it.
The most cited publications tackle a plethora of topics, such as Optoelectronics, Electrical engineering, Electronic engineering, MOSFET and Transistor. The Optoelectronics research tackled in the most cited publications is interrelated with Field-effect transistor which concerns subjects like Transconductance. The most cited papers tackle studies in Condensed matter physics and the interrelated subject of Electron and Electric field to gain insights into MOSFET.
The journal aims to foster the development of research in Optoelectronics, Transistor, Logic gate, Condensed matter physics and Voltage. The concepts on Optoelectronics presented in it can also apply to other research fields, including Capacitance and MOSFET. The MOSFET study tackled is a key component of adjacent topics in the area of Silicon carbide.
The journal explores issues in Transistor which can be linked to other research areas like CMOS and Thin-film transistor. In addition to Logic gate research, it aims to explore topics under Quantum tunnelling, Semiconductor device modeling and Ferroelectricity. While Condensed matter physics is the focus of the journal, it also provided insights into the studies of Electric field and Dielectric.
A key indicator for each journal is its effectiveness in reaching other researchers with the papers published at that venue.
The chart below presents the interquartile range (first quartile 25%, median 50% and third quartile 75%) of the number of citations of articles over time.
The top authors publishing in IEEE Transactions on Electron Devices (based on the number of publications) are:
The overall trend for top authors publishing in this journal is outlined below. The chart shows the number of publications at each edition of the journal for top authors.
Only papers with recognized affiliations are considered
The top affiliations publishing in IEEE Transactions on Electron Devices (based on the number of publications) are:
The overall trend for top affiliations publishing in this journal is outlined below. The chart shows the number of publications at each edition of the journal for top affiliations.
The publication chance index shows the ratio of articles published by the best research institutions in the journal edition to all articles published within that journal. The best research institutions were selected based on the largest number of articles published during all editions of the journal.
The chart below presents the percentage ratio of articles from top institutions (based on their ranking of total papers).Top affiliations were grouped by their rank into the following tiers: top 1-10, top 11-20, top 21-50, and top 51+. Only articles with a recognized affiliation are considered.
During the most recent 2021 edition, 11.43% of publications had an unrecognized affiliation. Out of the publications with recognized affiliations, 7.69% were posted by at least one author from the top 10 institutions publishing in the journal. Another 17.04% included authors affiliated with research institutions from the top 11-20 affiliations. Institutions from the 21-50 range included 16.09% of all publications and 59.17% were from other institutions.
A very common phenomenon observed among researchers publishing scientific articles is the intentional selection of journals they have already attended in the past. In particular, it is worth analyzing the case when the authors participate in the same journal from year to year.
The Returning Authors Index presented below illustrates the ratio of authors who participated in both a given as well as the previous edition of the journal in relation to all participants in a given year.
The graph below shows the Returning Institution Index, illustrating the ratio of institutions that participated in both a given and the previous edition of the conference in relation to all affiliations present in a given year.
Our experience to innovation index was created to show a cross-section of the experience level of authors publishing in a journal. The index includes the authors publishing at the last edition of a journal, grouped by total number of publications throughout their academic career (P) and the total number of citations of these publications ever received (C).
The group intervals were selected empirically to best show the diversity of the authors' experiences, their labels were selected as a convenience, not as judgment. The authors were divided into the following groups:
The chart below illustrates experience levels of first authors in cases of publications with multiple authors.
T. Mikolajick;U. Schroeder;S. Slesazeck
(2020)Yongsun Lee;Youngin Goh;Junghyeon Hwang;Dipjyoti Das
(2021)Manas Ranjan Tripathy;Ashish Kumar Singh;A. Samad;Sweta Chander
(2020)Man Hoi Wong;Masataka Higashiwaki
(2020)Samuel James Bader;Hyunjea Lee;Reet Chaudhuri;Shimin Huang
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