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IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

Las Vegas, United States

Submission Deadline: Monday 25 Jul 2022

Conference Dates: Jan 22, 2023 - Jan 25, 2023

Research
Impact Score 1.00

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Ranking & Metrics Impact Score is a novel metric devised to rank conferences based on the number of contributing the best scientists in addition to the h-index estimated from the scientific papers published by the best scientists. See more details on our methodology page.

Research Impact Score: 1.00
Contributing Best Scientists: 16
H5-index:
Papers published by Best Scientists 26
Research Ranking (Electronics and Electrical Engineering) 263

Conference Call for Papers

SiRF2023 solicits papers in the following focus areas:

1. RF, Millimeter-wave and THz Integrated Circuit Front ends

Integrated Transceivers and Transceiver sub-systems
MIMO and Phased Array Integrated Circuits
Ultra-Wideband Front ends and Building Blocks
Emerging Technologies, 5G and 6G Front ends
mmw & THz Imaging Circuits
System-on-Chip and System-on-Package
Smart Antennas and Integrated Meta-Surfaces
RF, mmW and THz Circuit Building Blocks
Reconfigurable Radio Front ends
Wireless Sensors and Sensor Systems
Low Power RFIC for Biomedical Applications
2. Wireline Communication Circuits and Building Blocks

Wideband Transmitter, Receiver and Transceivers
High Frequency Oscillators and Signal Generators
PLLs and Frequency Synthesizer Integrated Circuits
Clock and Data Recovery Circuits
Precise Timing Circuits
High-Speed Modulators and Drivers
3. High Speed Data Converters & Mixed Signal Circuits

Nyquist Rate and Oversampling A/D and D/A Converters
Embedded & Application-Specific A/D and D/A Converters
Analog to Information Conversion
Time-to-Digital Converters
Analog Circuits and Building Blocks
Digitally Assisted Analog Circuits and Analog Calibration
MEMS/sensor Interface Circuits
4. Silicon Photonics and Electronic-Photonic Integrated Circuits

Wideband Electronic-Photonic Circuits
Electronic-Photonic Modulators
Electronic-Photonic Receives
Wideband TIAs and Drivers
LIDARS
Optical PLLs
Radio Over Fiber Circuits
5. Devices, Technology, Modeling and Materials

Advanced RF CMOS and SiGe BiCMOS Devices
Si-Based Heterostructures
Through-Silicon Via Integration
RF MEMs and Micromachining
Advanced Device Modeling
Advanced Packaging
Epitaxy
Strain Engineering
Characterization and Stability Issues
Smart Materials
Nano Technologies Including CNT, Nanowire and Graphene
6. Measurement and Modeling

Multi-Physics Modeling
EM Simulation of Complex RFICs
Robust Measurement and De-Embedding
Built-In Self-Test
Self-Calibration

Overview

Top Research Topics at Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems?

  • Electrical engineering (59.37%)
  • Electronic engineering (46.81%)
  • Optoelectronics (33.56%)

Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems aims to foster the development of research in Electrical engineering, Electronic engineering, Optoelectronics, CMOS and Amplifier. The study on Electrical engineering presented in it intersects with subjects under the field of Silicon on insulator. The work on Electronic engineering tackled in Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems brings together disciplines like Power (physics), Inductor and Electronic circuit.

Inductor research featured in Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems incorporates concerns from various other topics such as Q factor, Inductance and Capacitor. The close relationship between Heterojunction bipolar transistor and Common emitter is one of the points of interest dissected in Optoelectronics research. The event explores issues in CMOS which can be linked to other research areas like Phase noise, Voltage-controlled oscillator, Voltage, Chip and Low-power electronics.

The study on Voltage-controlled oscillator presented in Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems intersects with the topics under dBc. Research on Amplifier presented in Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems focuses, in particular, on RF power amplifier, Power-added efficiency and Cascode. The Noise figure study tackled is a key component of adjacent topics in the area of Low-noise amplifier.

What are the most cited papers published at the conference?

  • Half-Terahertz SiGe BiCMOS technology (145 citations)
  • A Thin-Film SOI 180nm CMOS RF Switch Technology (114 citations)
  • Identification of RF Harmonic Distortion on Si Substrates and its Reduction Using a Trap-Rich Layer (106 citations)

Research areas of the most cited articles at Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems:

Electrical engineering, Electronic engineering, CMOS, Optoelectronics and Amplifier are the main subjects of interest in the most cited papers. The published papers with studies in Electrical engineering featured incorporate elements of Silicon on insulator and Microelectromechanical systems. The most cited articles explore issues in Electronic engineering which can be linked to other research areas like Wireless, Electronic circuit, Inductor, Monolithic microwave integrated circuit and Integrated circuit.

What topics the last edition of the conference is best known for?

  • Quantum mechanics
  • Electrical engineering
  • Semiconductor

The previous edition focused in particular on these issues:

The scientific interests tackled in Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems are Optoelectronics, Inductor, Voltage-controlled oscillator, Noise figure and Power (physics). Topics in Optoelectronics were tackled in line with various other fields like Bicmos technology, Amplifier, Gain stage, Extremely high frequency and Transistor. The event holds forums on Voltage-controlled oscillator that merges themes from other disciplines such as Phase noise, Electrical conductor, Varicap and Sensitivity (electronics).

Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems facilitates discussions on Power (physics) that incorporate concepts from other fields like dBc, Frequency multiplier and Harmonic. The Compensation (engineering) research discussed is included in the broader subject of Electrical engineering. Aside from discussions in Electrical engineering, it also deals with the subject of Continuous-wave radar which intersects with Transimpedance amplifier disciplines.

The most cited articles from the last conference are:

  • A 60-GHz Variable Gain Amplifier with Phase-compensated Variable Attenuator (0 citations)
  • A 314-344 GHz Frequency Doubler with Driving Stage and 1 dBm P sat in SiGe BiCMOS Technology (0 citations)
  • Experimental Extraction of Thermal Noise γ Factors in a 14-nm RF FinFET technology (0 citations)

Papers citation over time

A key indicator for each conference is its effectiveness in reaching other researchers with the papers published at that venue.

The chart below presents the interquartile range (first quartile 25%, median 50% and third quartile 75%) of the number of citations of articles over time.

Research.com

The top authors publishing at Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (based on the number of publications) are:

  • John D. Cressler (36 papers) absent at the last edition,
  • Zhenqiang Ma (27 papers) absent at the last edition,
  • Guofu Niu (25 papers) absent at the last edition,
  • Daniel Gloria (22 papers) published 1 paper at the last edition,
  • Jean-Pierre Raskin (22 papers) absent at the last edition.

The overall trend for top authors publishing at this conference is outlined below. The chart shows the number of publications at each edition of the conference for top authors.

Research.com

Only papers with recognized affiliations are considered

The top affiliations publishing at Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (based on the number of publications) are:

  • Georgia Institute of Technology (47 papers) absent at the last edition,
  • STMicroelectronics (39 papers) published 1 paper at the last edition the same number as at the previous edition,
  • IBM (33 papers) absent at the last edition,
  • Auburn University (32 papers) absent at the last edition,
  • Centre national de la recherche scientifique (32 papers) absent at the last edition.

The overall trend for top affiliations publishing at this conference is outlined below. The chart shows the number of publications at each edition of the conference for top affiliations.

Research.com

Publication chance based on affiliation

The publication chance index shows the ratio of articles published by the best research institutions at the conference edition to all articles published within that conference. The best research institutions were selected based on the largest number of articles published during all editions of the conference.

The chart below presents the percentage ratio of articles from top institutions (based on their ranking of total papers).Top affiliations were grouped by their rank into the following tiers: top 1-10, top 11-20, top 21-50, and top 51+. Only articles with a recognized affiliation are considered.

Research.com

During the most recent 2021 edition, 0.00% of publications had an unrecognized affiliation. Out of the publications with recognized affiliations, 21.43% were posted by at least one author from the top 10 institutions publishing at the conference. Another 7.14% included authors affiliated with research institutions from the top 11-20 affiliations. Institutions from the 21-50 range included 21.43% of all publications and 50.00% were from other institutions.

Returning Authors Index

A very common phenomenon observed among researchers publishing scientific articles is the intentional selection of conferences they have already attended in the past. In particular, it is worth analyzing the case when the authors participate in the same conference from year to year.

The Returning Authors Index presented below illustrates the ratio of authors who participated in both a given as well as the previous edition of the conference in relation to all participants in a given year.

Research.com

Returning Institution Index

The graph below shows the Returning Institution Index, illustrating the ratio of institutions that participated in both a given and the previous edition of the conference in relation to all affiliations present in a given year.

Research.com

The experience to innovation index

Our experience to innovation index was created to show a cross-section of the experience level of authors publishing at a conference. The index includes the authors publishing at the last edition of a conference, grouped by total number of publications throughout their academic career (P) and the total number of citations of these publications ever received (C).

The group intervals were selected empirically to best show the diversity of the authors' experiences, their labels were selected as a convenience, not as judgment. The authors were divided into the following groups:

  • Novice - P < 5 or C < 25 (the number of publications less than 5 or the number of citations less than 25),
  • Competent - P < 10 or C < 100 (the number of publications less than 10 or the number of citations less than 100),
  • Experienced - P < 25 or C < 625 (the number of publications less than 25 or the number of citations less than 625),
  • Master - P < 50 or C < 2500 (the number of publications less than 50 or the number of citations less than 2500),
  • Star - P ≥ 50 and C ≥ 2500 (both the number of publications greater than 50 and the number of citations greater than 2500).

Research.com

The chart below illustrates experience levels of first authors in cases of publications with multiple authors.

Research.com

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Previous Editions

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