T. Schram

T. Schram publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where T. Schram sits on this spectrum.

T. Schram D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where T. Schram sits on this spectrum.

Best Publications

• Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions

  M. Houssa;L. Pantisano;L.-Å. Ragnarsson;R. Degraeve

  344
  Citations

• Ultra low-EOT (5 Å) gate-first and gate-last high performance CMOS achieved by gate-electrode optimization

  L.-A. Ragnarsson;Z. Li;J. Tseng;T. Schram

  226
  Citations

• Gate-all-around MOSFETs based on vertically stacked horizontal Si nanowires in a replacement metal gate process on bulk Si substrates

  H. Mertens;R. Ritzenthaler;A. Hikavyy;M. S. Kim

  207
  Citations

• Passivation and interface state density of SiO2/HfO2-based/polycrystalline-Si gate stacks

  R. J. Carter;E. Cartier;A. Kerber;L. Pantisano

  166
  Citations

• Vertically stacked gate-all-around Si nanowire CMOS transistors with dual work function metal gates

  H. Mertens;R. Ritzenthaler;A. Chasin;T. Schram

  155
  Citations

• On the thermal stability of atomic layer deposited TiN as gate electrode in MOS devices

  J. Westlinder;T. Schram;L. Pantisano;E. Cartier

  140
  Citations

• Tall triple-gate devices with TiN/HfO/sub 2/ gate stack

  N. Collaert;M. Demand;I. Ferain;J. Lisoni

  100
  Citations

• Challenges of Wafer‐Scale Integration of 2D Semiconductors for High‐Performance Transistor Circuits

  Unknown

  99
  Citations

• Estimation of fixed charge densities in hafnium-silicate gate dielectrics

  V.S. Kaushik;B.J. O'Sullivan;G. Pourtois;N. Van Hoornick

  95
  Citations

• 2D materials: roadmap to CMOS integration

  C. Huyghebaert;T. Schram;Q. Smets;T. Kumar Agarwal

  89
  Citations

• Multiring Circular Transmission Line Model for Ultralow Contact Resistivity Extraction

  Hao Yu;Marc Schaekers;Tom Schram;Erik Rosseel

  81
  Citations

• Ultrathin EOT high-κ/metal gate devices for future technologies: Challenges, achievements and perspectives (invited)

  L. . Ragnarsson;T. Chiarella;M. Togo;T. Schram

  80
  Citations

• Influence of Al2O3 crystallization on band offsets at interfaces with Si and TiNx

  V. V. Afanas'ev;M. Houssa;A. Stesmans;C. Merckling

  79
  Citations

• Strained Germanium Gate-All-Around pMOS Device Demonstration Using Selective Wire Release Etch Prior to Replacement Metal Gate Deposition

  L. Witters;H. Arimura;F. Sebaai;A. Hikavyy

  74
  Citations

• Ruthenium gate electrodes on SiO2 and HfO2: Sensitivity to hydrogen and oxygen ambients

  L. Pantisano;T. Schram;Z. Li;J. G. Lisoni

  65
  Citations

• Performance comparison of sub 1 nm sputtered TiN/HfO/sub 2/ nMOS and pMOSFETs

  W. Tsai;L.-A. Ragnarsson;L. Pantisano;P.J. Chen

  61
  Citations

• Strained germanium gate-all-around PMOS device demonstration using selective wire release etch prior to replacement metal gate deposition

  L. Witters;F. Sebaai;A. Hikavyy;A. P. Milenin

  60
  Citations

• Characterization of field-effect transistors with La2Hf2O7 and HfO2 gate dielectric layers deposited by molecular-beam epitaxy

  Z. M. Rittersma;J. C. Hooker;G. Vellianitis;J.-P. Locquet

  56
  Citations

• Achieving Conduction Band-Edge Effective Work Functions by $\hbox{La}_{2}\hbox{O}_{3}$ Capping of Hafnium Silicates

  L.-A. Ragnarsson;V.S. Chang;Hong Yu Yu;Hag-Ju Cho

  50
  Citations

• Wafer-scale integration of double gated WS 2 -transistors in 300mm Si CMOS fab

  I. Asselberghs;Q. Smets;T. Schram;B. Groven

  47
  Citations