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T. Schram

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 33 6097 5853 73 68 263 4416

T. Schram publications per year

The chart shows the history of publications by T. Schram between 1995 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. T. Schram published across 31 years, from 1995 to 2025, averaging 9.7 papers a year. Output peaked at 25 publications in 2006. 17 of the 302 publications appeared in the last two years.

No. of publications
5 10 15 20 25
Bar chart. Horizontal axis: year, 1995 to 2025. Vertical axis: number of publications, 0 to 25. Peak 25 publications in 2006. 1995: 1 publication 1996: 1 publication 1997: 0 publications 1998: 3 publications 1999: 2 publications 2000: 7 publications 2001: 4 publications 2002: 5 publications 2003: 8 publications 2004: 12 publications 2005: 20 publications 2006: 25 publications 2007: 18 publications 2008: 14 publications 2009: 17 publications 2010: 11 publications 2011: 9 publications 2012: 8 publications 2013: 15 publications 2014: 19 publications 2015: 14 publications 2016: 16 publications 2017: 15 publications 2018: 11 publications 2019: 5 publications 2020: 9 publications 2021: 3 publications 2022: 7 publications 2023: 6 publications 2024: 10 publications 2025: 7 publications
1995 2025

302 publications in total across all disciplines

View publications per year as a table
T. Schram: publications per year, 1995 to 2025
Year Publications
1995 1
1996 1
1997 0
1998 3
1999 2
2000 7
2001 4
2002 5
2003 8
2004 12
2005 20
2006 25
2007 18
2008 14
2009 17
2010 11
2011 9
2012 8
2013 15
2014 19
2015 14
2016 16
2017 15
2018 11
2019 5
2020 9
2021 3
2022 7
2023 6
2024 10
2025 7
Total 302
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T. Schram publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where T. Schram sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 254–273 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 263 publications — 48th percentile

48% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366 263
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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T. Schram D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where T. Schram sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 33 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 33 D-Index — 14th percentile

14% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262 33
34 244
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
Download as CSV

Best Publications

  • Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions

    M. Houssa;L. Pantisano;L.-Å. Ragnarsson;R. Degraeve

  • Ultra low-EOT (5 Å) gate-first and gate-last high performance CMOS achieved by gate-electrode optimization

    L.-A. Ragnarsson;Z. Li;J. Tseng;T. Schram

  • Gate-all-around MOSFETs based on vertically stacked horizontal Si nanowires in a replacement metal gate process on bulk Si substrates

    H. Mertens;R. Ritzenthaler;A. Hikavyy;M. S. Kim

  • Passivation and interface state density of SiO2/HfO2-based/polycrystalline-Si gate stacks

    R. J. Carter;E. Cartier;A. Kerber;L. Pantisano

  • Vertically stacked gate-all-around Si nanowire CMOS transistors with dual work function metal gates

    H. Mertens;R. Ritzenthaler;A. Chasin;T. Schram

  • On the thermal stability of atomic layer deposited TiN as gate electrode in MOS devices

    J. Westlinder;T. Schram;L. Pantisano;E. Cartier

  • Tall triple-gate devices with TiN/HfO/sub 2/ gate stack

    N. Collaert;M. Demand;I. Ferain;J. Lisoni

  • Challenges of Wafer‐Scale Integration of 2D Semiconductors for High‐Performance Transistor Circuits

    Unknown

  • Estimation of fixed charge densities in hafnium-silicate gate dielectrics

    V.S. Kaushik;B.J. O'Sullivan;G. Pourtois;N. Van Hoornick

  • 2D materials: roadmap to CMOS integration

    C. Huyghebaert;T. Schram;Q. Smets;T. Kumar Agarwal

  • Multiring Circular Transmission Line Model for Ultralow Contact Resistivity Extraction

    Hao Yu;Marc Schaekers;Tom Schram;Erik Rosseel

  • Ultrathin EOT high-κ/metal gate devices for future technologies: Challenges, achievements and perspectives (invited)

    L. . Ragnarsson;T. Chiarella;M. Togo;T. Schram

  • Influence of Al2O3 crystallization on band offsets at interfaces with Si and TiNx

    V. V. Afanas'ev;M. Houssa;A. Stesmans;C. Merckling

  • Strained Germanium Gate-All-Around pMOS Device Demonstration Using Selective Wire Release Etch Prior to Replacement Metal Gate Deposition

    L. Witters;H. Arimura;F. Sebaai;A. Hikavyy

  • Ruthenium gate electrodes on SiO2 and HfO2: Sensitivity to hydrogen and oxygen ambients

    L. Pantisano;T. Schram;Z. Li;J. G. Lisoni

  • Performance comparison of sub 1 nm sputtered TiN/HfO/sub 2/ nMOS and pMOSFETs

    W. Tsai;L.-A. Ragnarsson;L. Pantisano;P.J. Chen

  • Strained germanium gate-all-around PMOS device demonstration using selective wire release etch prior to replacement metal gate deposition

    L. Witters;F. Sebaai;A. Hikavyy;A. P. Milenin

  • Characterization of field-effect transistors with La2Hf2O7 and HfO2 gate dielectric layers deposited by molecular-beam epitaxy

    Z. M. Rittersma;J. C. Hooker;G. Vellianitis;J.-P. Locquet

  • Achieving Conduction Band-Edge Effective Work Functions by $\hbox{La}_{2}\hbox{O}_{3}$ Capping of Hafnium Silicates

    L.-A. Ragnarsson;V.S. Chang;Hong Yu Yu;Hag-Ju Cho

  • Wafer-scale integration of double gated WS 2 -transistors in 300mm Si CMOS fab

    I. Asselberghs;Q. Smets;T. Schram;B. Groven

Frequent Co-Authors

Herman Terryn
Herman Terryn Vrije Universiteit Brussel

External Links

Personal website of T. Schram

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Related Online Degrees & Career Pathways

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Best Scientists Citing T. Schram

Herman Terryn

Herman Terryn

Vrije Universiteit Brussel

Publications: 5

Ingrid Milošev

Ingrid Milošev

Jožef Stefan Institute

Publications: 2

Janez Kovač

Janez Kovač

Jožef Stefan Institute

Publications: 2

Johannes M. C. Mol

Johannes M. C. Mol

Delft University of Technology

Publications: 2

Peter Skeldon

Peter Skeldon

University of Manchester

Publications: 1

John C. Walmsley

John C. Walmsley

University of Cambridge

Publications: 1

Monique Biesemans

Monique Biesemans

Vrije Universiteit Brussel

Publications: 1

Lidia Armelao

Lidia Armelao

University of Padua

Publications: 1

Rudolph Willem

Rudolph Willem

Vrije Universiteit Brussel

Publications: 1

Christopher M.A. Brett

Christopher M.A. Brett

University of Coimbra

Publications: 1

Philippe Marcus

Philippe Marcus

Centre national de la recherche scientifique, CNRS

Publications: 1

Artur de Jesus Motheo

Artur de Jesus Motheo

Universidade de São Paulo

Publications: 1

Jinghua Jiang

Jinghua Jiang

Hohai University

Publications: 1

Gerald S. Frankel

Gerald S. Frankel

The Ohio State University

Publications: 1

Lorenzo Fedrizzi

Lorenzo Fedrizzi

University of Udine

Publications: 1

J.H.W. de Wit

J.H.W. de Wit

Delft University of Technology

Publications: 1

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