T. Schram

Best Publications

• Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions

  M. Houssa;L. Pantisano;L.-Å. Ragnarsson;R. Degraeve

  344
  Citations

• Ultra low-EOT (5 Å) gate-first and gate-last high performance CMOS achieved by gate-electrode optimization

  L.-A. Ragnarsson;Z. Li;J. Tseng;T. Schram

  226
  Citations

• Gate-all-around MOSFETs based on vertically stacked horizontal Si nanowires in a replacement metal gate process on bulk Si substrates

  H. Mertens;R. Ritzenthaler;A. Hikavyy;M. S. Kim

  207
  Citations

• Passivation and interface state density of SiO2/HfO2-based/polycrystalline-Si gate stacks

  R. J. Carter;E. Cartier;A. Kerber;L. Pantisano

  166
  Citations

• Vertically stacked gate-all-around Si nanowire CMOS transistors with dual work function metal gates

  H. Mertens;R. Ritzenthaler;A. Chasin;T. Schram

  155
  Citations

• On the thermal stability of atomic layer deposited TiN as gate electrode in MOS devices

  J. Westlinder;T. Schram;L. Pantisano;E. Cartier

  140
  Citations

• Tall triple-gate devices with TiN/HfO/sub 2/ gate stack

  N. Collaert;M. Demand;I. Ferain;J. Lisoni

  100
  Citations

• Challenges of Wafer‐Scale Integration of 2D Semiconductors for High‐Performance Transistor Circuits

  Unknown

  99
  Citations

• Estimation of fixed charge densities in hafnium-silicate gate dielectrics

  V.S. Kaushik;B.J. O'Sullivan;G. Pourtois;N. Van Hoornick

  95
  Citations

• 2D materials: roadmap to CMOS integration

  C. Huyghebaert;T. Schram;Q. Smets;T. Kumar Agarwal

  89
  Citations

• Multiring Circular Transmission Line Model for Ultralow Contact Resistivity Extraction

  Hao Yu;Marc Schaekers;Tom Schram;Erik Rosseel

  81
  Citations

• Ultrathin EOT high-κ/metal gate devices for future technologies: Challenges, achievements and perspectives (invited)

  L. . Ragnarsson;T. Chiarella;M. Togo;T. Schram

  80
  Citations

• Influence of Al2O3 crystallization on band offsets at interfaces with Si and TiNx

  V. V. Afanas'ev;M. Houssa;A. Stesmans;C. Merckling

  79
  Citations

• Strained Germanium Gate-All-Around pMOS Device Demonstration Using Selective Wire Release Etch Prior to Replacement Metal Gate Deposition

  L. Witters;H. Arimura;F. Sebaai;A. Hikavyy

  74
  Citations

• Ruthenium gate electrodes on SiO2 and HfO2: Sensitivity to hydrogen and oxygen ambients

  L. Pantisano;T. Schram;Z. Li;J. G. Lisoni

  65
  Citations

• Performance comparison of sub 1 nm sputtered TiN/HfO/sub 2/ nMOS and pMOSFETs

  W. Tsai;L.-A. Ragnarsson;L. Pantisano;P.J. Chen

  61
  Citations

• Strained germanium gate-all-around PMOS device demonstration using selective wire release etch prior to replacement metal gate deposition

  L. Witters;F. Sebaai;A. Hikavyy;A. P. Milenin

  60
  Citations

• Characterization of field-effect transistors with La2Hf2O7 and HfO2 gate dielectric layers deposited by molecular-beam epitaxy

  Z. M. Rittersma;J. C. Hooker;G. Vellianitis;J.-P. Locquet

  56
  Citations

• Achieving Conduction Band-Edge Effective Work Functions by $\hbox{La}_{2}\hbox{O}_{3}$ Capping of Hafnium Silicates

  L.-A. Ragnarsson;V.S. Chang;Hong Yu Yu;Hag-Ju Cho

  50
  Citations

• Wafer-scale integration of double gated WS 2 -transistors in 300mm Si CMOS fab

  I. Asselberghs;Q. Smets;T. Schram;B. Groven

  47
  Citations