N. S. Saks

Best Publications

• Radiation Effects in MOS Capacitors with Very Thin Oxides at 80°K

  Unknown

  254
  Citations

• Interface trap profile near the band edges at the 4H-SiC/SiO2 interface

  N. S. Saks;S. S. Mani;A. K. Agarwal

  238
  Citations

• Lateral distribution of hot-carrier-induced interface traps in MOSFETs

  M.G. Ancona;N.S. Saks;D. McCarthy

  225
  Citations

• Interface trap formation via the two-stage H/sup +/ process

  Unknown

  193
  Citations

• Hall mobility and free electron density at the SiC/SiO2 interface in 4H–SiC

  Unknown

  172
  Citations

• Determination of interface trap capture cross sections using three-level charge pumping

  N.S. Saks;M.G. Ancona

  160
  Citations

• Time dependence of radiation-induced interface trap formation in metal-oxide-semiconductor devices as a function of oxide thickness and applied field

  Unknown

  154
  Citations

• Formation of interface traps in MOSFETs during annealing following low temperature irradiation

  N.S. Saks;R.B. Klein;D.L. Griscom

  137
  Citations

• Time dependence of interface trap formation in MOSFETs following pulsed irradiation

  Unknown

  127
  Citations

• Evaluation of hot carrier degradation of N-channel MOSFET's with the charge pumping technique

  P. Heremans;H.E. Maes;N. Saks

  124
  Citations

• Observation of hot-hole injection in NMOS transistors using a modified floating-gate technique

  N.S. Saks;P.L. Heremans;L. van den Hove;H.E. Maes

  116
  Citations

• Observation of H/sup +/ motion during interface trap formation

  Unknown

  92
  Citations

• Investigation of Lateral RESURF, 6H-SiC MOSFETs

  Anant K. Agarwal;N.S. Saks;S.S. Mani;V.S. Hegde

  91
  Citations

• 10 A, 2.4 kV Power DiMOSFETs in 4H-SiC

  Sei-Hyung Ryu;A. Agarwal;J. Richmond;J. Palmour

  79
  Citations

• Using the Hall effect to measure interface trap densities in silicon carbide and silicon metal-oxide-semiconductor devices

  N. S. Saks;M. G. Ancona;R. W. Rendell

  76
  Citations

• Low-dose aluminum and boron implants in 4H and 6H silicon carbide

  N. S. Saks;A. K. Agarwal;S. H. Ryu;J. W. Palmour

  72
  Citations

• Generation of Interface States by Ionizing Radiation at 80K Measured by Charge Pumping and Subthreshold Slope Techniques

  Unknown

  71
  Citations

• Characterization of individual interface traps with charge pumping

  N. S. Saks;G. Groeseneken;I. DeWolf

  65
  Citations

• Theory and measurement of quantization effects on SiSiO2 interface trap modeling

  R.R. Siergiej;M.H. White;N.S. Saks

  62
  Citations

• Nature of Radiation-Induced Point Defects in Amorphous SiO2 and their Role in SiO2-ON-Si Structures

  Unknown

  61
  Citations