N. S. Saks

N. S. Saks publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where N. S. Saks sits on this spectrum.

N. S. Saks D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where N. S. Saks sits on this spectrum.

Best Publications

• Radiation Effects in MOS Capacitors with Very Thin Oxides at 80°K

  Unknown

  254
  Citations

• Interface trap profile near the band edges at the 4H-SiC/SiO2 interface

  N. S. Saks;S. S. Mani;A. K. Agarwal

  238
  Citations

• Lateral distribution of hot-carrier-induced interface traps in MOSFETs

  M.G. Ancona;N.S. Saks;D. McCarthy

  225
  Citations

• Interface trap formation via the two-stage H/sup +/ process

  Unknown

  193
  Citations

• Hall mobility and free electron density at the SiC/SiO2 interface in 4H–SiC

  Unknown

  172
  Citations

• Determination of interface trap capture cross sections using three-level charge pumping

  N.S. Saks;M.G. Ancona

  160
  Citations

• Time dependence of radiation-induced interface trap formation in metal-oxide-semiconductor devices as a function of oxide thickness and applied field

  Unknown

  154
  Citations

• Formation of interface traps in MOSFETs during annealing following low temperature irradiation

  N.S. Saks;R.B. Klein;D.L. Griscom

  137
  Citations

• Time dependence of interface trap formation in MOSFETs following pulsed irradiation

  Unknown

  127
  Citations

• Evaluation of hot carrier degradation of N-channel MOSFET's with the charge pumping technique

  P. Heremans;H.E. Maes;N. Saks

  124
  Citations

• Observation of hot-hole injection in NMOS transistors using a modified floating-gate technique

  N.S. Saks;P.L. Heremans;L. van den Hove;H.E. Maes

  116
  Citations

• Observation of H/sup +/ motion during interface trap formation

  Unknown

  92
  Citations

• Investigation of Lateral RESURF, 6H-SiC MOSFETs

  Anant K. Agarwal;N.S. Saks;S.S. Mani;V.S. Hegde

  91
  Citations

• 10 A, 2.4 kV Power DiMOSFETs in 4H-SiC

  Sei-Hyung Ryu;A. Agarwal;J. Richmond;J. Palmour

  79
  Citations

• Using the Hall effect to measure interface trap densities in silicon carbide and silicon metal-oxide-semiconductor devices

  N. S. Saks;M. G. Ancona;R. W. Rendell

  76
  Citations

• Low-dose aluminum and boron implants in 4H and 6H silicon carbide

  N. S. Saks;A. K. Agarwal;S. H. Ryu;J. W. Palmour

  72
  Citations

• Generation of Interface States by Ionizing Radiation at 80K Measured by Charge Pumping and Subthreshold Slope Techniques

  Unknown

  71
  Citations

• Characterization of individual interface traps with charge pumping

  N. S. Saks;G. Groeseneken;I. DeWolf

  65
  Citations

• Theory and measurement of quantization effects on SiSiO2 interface trap modeling

  R.R. Siergiej;M.H. White;N.S. Saks

  62
  Citations

• Nature of Radiation-Induced Point Defects in Amorphous SiO2 and their Role in SiO2-ON-Si Structures

  Unknown

  61
  Citations