IEEE Electron Device Letters

Top Research Topics at IEEE Electron Device Letters?

The topics of Optoelectronics, Electrical engineering, Transistor, Electronic engineering and MOSFET are the focal point of discussions in IEEE Electron Device Letters. The majority of Optoelectronics studies are focused on the issues of Silicon. Substrate (electronics), Doping and Analytical chemistry are some topics wherein Silicon research discussed in it have an impact.

While Analytical chemistry is the focus of IEEE Electron Device Letters, it also provided insights into the studies of Oxide and Annealing (metallurgy). Electrical engineering research in IEEE Electron Device Letters involves the investigation of Capacitance studies, all of which are linked to disciplines such as Capacitor. It facilitates discussions on Transistor that incorporate concepts from other fields like Cutoff frequency, Wide-bandgap semiconductor and Logic gate.

The studies tackled, which mainly focus on Electronic engineering, apply to Dielectric as well. While it focused on MOSFET, it was also able to explore topics like Silicon on insulator, Electron mobility, Condensed matter physics and Gate dielectric. The journal tackles studies in Gallium arsenide and the interrelated subject of Heterojunction to gain insights into Field-effect transistor.

• Optoelectronics (64.13%)
• Electrical engineering (30.21%)
• Transistor (24.25%)

What are the most cited papers published in the journal?

• High-performance heat sinking for VLSI (3316 citations)
• Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec (1274 citations)
• NROM: A novel localized trapping, 2-bit nonvolatile memory cell (1147 citations)

Research areas of the most cited articles at IEEE Electron Device Letters:

The journal articles facilitate discussions on Optoelectronics, Electrical engineering, Transistor, MOSFET and Electronic engineering. While work presented in the journal papers provide substantial information on Optoelectronics, it also covers topics in Field-effect transistor, High-electron-mobility transistor and Threshold voltage. The most cited publications focus on Transistor but sometimes tackle the closely related topic of Thin-film transistor which is concerned with Amorphous solid.

What topics the last edition of the journal is best known for?

• Quantum mechanics
• Electron
• Composite material

The previous edition focused in particular on these issues:

The journal primarily focuses on research topics in Optoelectronics, Transistor, Logic gate, Voltage and Condensed matter physics. Silicon is a focus of the Optoelectronics works in it. The concepts on Transistor presented in it can also apply to other research fields, including Capacitance and Stress (mechanics).

IEEE Electron Device Letters explores topics in Condensed matter physics which can be helpful for research in disciplines like Schottky diode and Ferroelectricity, Dielectric. Research in Breakdown voltage and the interrelating topic of Doping were among the subjects of interest in the Schottky diode studies discussed in it. The study of Wide-bandgap semiconductor encompasses disciplines such as Gallium nitride, as well as fields such as High-electron-mobility transistor, all of which overlap with one another.

The most cited articles from the last journal are:

• Uncovering the Anisotropic Electronic Structure of 2D Group VA-VA Monolayers for Quantum Transport (10 citations)
• Scaled Atomic-Layer-Deposited Indium Oxide Nanometer Transistors With Maximum Drain Current Exceeding 2 A/mm at Drain Voltage of 0.7 V (9 citations)
• p -GaN Gate HEMT With Surface Reinforcement for Enhanced Gate Reliability (9 citations)

Papers citation over time

A key indicator for each journal is its effectiveness in reaching other researchers with the papers published at that venue.

The chart below presents the interquartile range (first quartile 25%, median 50% and third quartile 75%) of the number of citations of articles over time.

Top authors and change over time

The top authors publishing in IEEE Electron Device Letters (based on the number of publications) are:

• Dim-Lee Kwong (143 papers) absent at the last edition,
• Chenming Hu (120 papers) published 1 paper at the last edition, 4 less than at the previous edition,
• Umesh K. Mishra (109 papers) absent at the last edition,
• Ting-Chang Chang (104 papers) published 6 papers at the last edition, 6 less than at the previous edition,
• Albert Chin (83 papers) published 1 paper at the last edition.

The overall trend for top authors publishing in this journal is outlined below. The chart shows the number of publications at each edition of the journal for top authors.

Top affiliations and change over time

Only papers with recognized affiliations are considered

The top affiliations publishing in IEEE Electron Device Letters (based on the number of publications) are:

• National Chiao Tung University (620 papers) published 12 papers at the last edition, 3 less than at the previous edition,
• IBM (337 papers) published 3 papers at the last edition the same number as at the previous edition,
• University of California, Berkeley (260 papers) published 4 papers at the last edition, 4 less than at the previous edition,
• Massachusetts Institute of Technology (259 papers) published 1 paper at the last edition, 2 less than at the previous edition,
• National Cheng Kung University (254 papers) published 2 papers at the last edition, 7 less than at the previous edition.

The overall trend for top affiliations publishing in this journal is outlined below. The chart shows the number of publications at each edition of the journal for top affiliations.

Publication chance based on affiliation

The publication chance index shows the ratio of articles published by the best research institutions in the journal edition to all articles published within that journal. The best research institutions were selected based on the largest number of articles published during all editions of the journal.

The chart below presents the percentage ratio of articles from top institutions (based on their ranking of total papers).Top affiliations were grouped by their rank into the following tiers: top 1-10, top 11-20, top 21-50, and top 51+. Only articles with a recognized affiliation are considered.

During the most recent 2021 edition, 12.95% of publications had an unrecognized affiliation. Out of the publications with recognized affiliations, 15.43% were posted by at least one author from the top 10 institutions publishing in the journal. Another 16.80% included authors affiliated with research institutions from the top 11-20 affiliations. Institutions from the 21-50 range included 19.56% of all publications and 48.21% were from other institutions.

Returning Authors Index

A very common phenomenon observed among researchers publishing scientific articles is the intentional selection of journals they have already attended in the past. In particular, it is worth analyzing the case when the authors participate in the same journal from year to year.

The Returning Authors Index presented below illustrates the ratio of authors who participated in both a given as well as the previous edition of the journal in relation to all participants in a given year.

Returning Institution Index

The graph below shows the Returning Institution Index, illustrating the ratio of institutions that participated in both a given and the previous edition of the conference in relation to all affiliations present in a given year.

The experience to innovation index

Our experience to innovation index was created to show a cross-section of the experience level of authors publishing in a journal. The index includes the authors publishing at the last edition of a journal, grouped by total number of publications throughout their academic career (P) and the total number of citations of these publications ever received (C).

The group intervals were selected empirically to best show the diversity of the authors' experiences, their labels were selected as a convenience, not as judgment. The authors were divided into the following groups:

• Novice - P < 5 or C < 25 (the number of publications less than 5 or the number of citations less than 25),
• Competent - P < 10 or C < 100 (the number of publications less than 10 or the number of citations less than 100),
• Experienced - P < 25 or C < 625 (the number of publications less than 25 or the number of citations less than 625),
• Master - P < 50 or C < 2500 (the number of publications less than 50 or the number of citations less than 2500),
• Star - P ≥ 50 and C ≥ 2500 (both the number of publications greater than 50 and the number of citations greater than 2500).

The chart below illustrates experience levels of first authors in cases of publications with multiple authors.