World's Best Scientists 2026 revealed!

D-Index & Metrics

Chemistry

D-Index
67
Citations
13681
World Ranking
7044
National Ranking
404

Overview

What is he best known for?

The fields of study he is best known for:

  • Organic chemistry
  • Ion
  • Semiconductor

Atomic physics, Electronic structure, Density of states, Inverse photoemission spectroscopy and Condensed matter physics are his primary areas of study. In his study, which falls under the umbrella issue of Atomic physics, Oxidation state and Oxide is strongly linked to Valence. His Electronic structure research integrates issues from Density functional theory, Electronic band structure and Analytical chemistry.

His Density of states research is multidisciplinary, relying on both Electron spectroscopy and X-ray photoelectron spectroscopy. As part of the same scientific family, Russell G. Egdell usually focuses on Inverse photoemission spectroscopy, concentrating on Fermi level and intersecting with Ab initio, Diffraction and Work function. His study in Band gap and Direct and indirect band gaps is carried out as part of his Condensed matter physics studies.

His most cited work include:

  • Theoretical and Experimental Study of the Electronic Structures of MoO3 and MoO2 (357 citations)
  • Stereochemistry of post-transition metal oxides: revision of the classical lone pair model. (318 citations)
  • Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral In 2 O 3 (292 citations)

What are the main themes of his work throughout his whole career to date?

His main research concerns Analytical chemistry, X-ray photoelectron spectroscopy, Electronic structure, Doping and Condensed matter physics. His Analytical chemistry research is multidisciplinary, incorporating perspectives in Annealing, Ceramic, Antimony, Rutile and Mineralogy. His work deals with themes such as Lone pair, Crystallography, Photoemission spectroscopy, Density of states and Density functional theory, which intersect with Electronic structure.

His biological study spans a wide range of topics, including Valence, Thin film and Band gap. The concepts of his Condensed matter physics study are interwoven with issues in Metal and Semiconductor. His Inverse photoemission spectroscopy research integrates issues from Semimetal, Fermi level, Electron shell and Atomic physics.

He most often published in these fields:

  • Analytical chemistry (30.83%)
  • X-ray photoelectron spectroscopy (25.00%)
  • Electronic structure (22.50%)

What were the highlights of his more recent work (between 2009-2021)?

  • Doping (21.67%)
  • Thin film (13.33%)
  • Band gap (15.00%)

In recent papers he was focusing on the following fields of study:

The scientist’s investigation covers issues in Doping, Thin film, Band gap, Oxide and X-ray photoelectron spectroscopy. His research in Doping intersects with topics in Fermi level and Analytical chemistry. His Fermi level study combines topics in areas such as Angle-resolved photoemission spectroscopy and Density of states.

His Band gap study is concerned with the field of Condensed matter physics as a whole. His study in Oxide is interdisciplinary in nature, drawing from both Valence, Indium and Lone pair. He has researched X-ray photoelectron spectroscopy in several fields, including Computational physics, Ab initio quantum chemistry methods, Atomic physics, Scanning tunneling microscope and Density functional theory.

Between 2009 and 2021, his most popular works were:

  • Theoretical and Experimental Study of the Electronic Structures of MoO3 and MoO2 (357 citations)
  • Stereochemistry of post-transition metal oxides: revision of the classical lone pair model. (318 citations)
  • P-type transparent conducting oxides. (179 citations)

In his most recent research, the most cited papers focused on:

  • Organic chemistry
  • Ion
  • Semiconductor

His primary scientific interests are in Doping, Thin film, Band gap, Oxide and Analytical chemistry. When carried out as part of a general Doping research project, his work on Dopant is frequently linked to work in Electrical resistivity and conductivity, therefore connecting diverse disciplines of study. His study explores the link between Dopant and topics such as Scanning tunneling microscope that cross with problems in Atomic physics.

The Band gap study combines topics in areas such as Electronic structure, Neutron diffraction and Semiconductor. His Oxide study integrates concerns from other disciplines, such as Indium, Molybdenum, Chemical bond, Stereochemistry and Oxidation state. In the subject of general Analytical chemistry, his work in Solid solution, Raman spectroscopy, Photoemission spectroscopy and Sol-gel is often linked to Diffuse reflectance infrared fourier transform, thereby combining diverse domains of study.

Best Publications

  • Nature of the Band Gap of In2O3 Revealed by First-Principles Calculations and X-Ray Spectroscopy

    Aron Walsh;Juarez L.F. Da Silva;Su Huai Wei;C. Körber

  • Theoretical and Experimental Study of the Electronic Structures of MoO3 and MoO2

    David O. Scanlon;Graeme W. Watson;D. J. Payne;G. R. Atkinson

  • P-type transparent conducting oxides.

    Kelvin H L Zhang;Kai Xi;Mark G Blamire;Russell G Egdell

  • Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral In 2 O 3

    P. D. C. King;T. D. Veal;F. Fuchs;Ch. Y. Wang

  • Band structure of indium oxide: Indirect versus direct band gap

    Paul Erhart;Andreas Klein;Russell G. Egdell;Karsten Albe

  • Electronic origins of structural distortions in post-transition metal oxides: experimental and theoretical evidence for a revision of the lone pair model.

    D J Payne;R G Egdell;Aron Walsh;G W Watson

  • Surface electron accumulation and the charge neutrality level in In2O3.

    Pdc King;TD Veal;DJ Payne;A Bourlange

  • The metal-to-semiconductor transition in ternary ruthenium (IV) oxides: a study by electron spectroscopy

    P. A. Cox;R. G. Egdell;John B Goodenough;A. Hamnett

  • Thionine coated electrode for photogalvanic cells

    W. John Albery;Andrew W. Foulds;Keith J. Hall;A. Robert Hillman

  • The electronic structure of Bi2-xGdxRu2O7 and RuO2: A study by electron spectroscopy

    P. A. Cox;John B Goodenough;P. J. Tavener;D. Telles

  • Shallow donor state of hydrogen in In 2 O 3 and SnO 2 : Implications for conductivity in transparent conducting oxides

    Pdc King;RL Lichti;YG Celebi;JM Gil

  • High resolution x-ray photoemission study of plasma oxidation of indium–tin–oxide thin film surfaces

    V. Christou;M. Etchells;O. Renault;P. J. Dobson

  • Initial and final state effects in photoemission from Au nanoclusters on TiO2(110)

    A Howard;D.N.S Clark;C.E.J Mitchell;R.G Egdell

  • Competition between initial- and final-state effects in valence- and core-level x-ray photoemission of Sb-doped SnO 2

    R. G. Egdell;J. Rebane;T. J. Walker;D. S. L. Law

  • Electronic structure of In 2 O 3 and Sn-doped In 2 O 3 by hard x-ray photoemission spectroscopy

    C. Körber;V. Krishnakumar;Andreas Klein;G. Panaccione

  • Effect of Cr substitution on the electronic structure of CuAl 1 − x Cr x O 2

    David O. Scanlon;Aron Walsh;Benjamin J. Morgan;Graeme W. Watson

  • Understanding the electronic structure of IrO2 using hard-X-ray photoelectron spectroscopy and density-functional theory.

    Kahk Jm;Poll Cg;Oropeza Fe;Ablett Jm

  • Experimental and theoretical study of the electronic structures of α-PbO and β-PbO2

    David J. Payne;Russell G. Egdell;Danny S.L. Law;Per Anders Glans

  • N-type doping in CdO ceramics: a study by EELS and photoemission spectroscopy

    Y. Dou;R.G. Egdell;T. Walker;D.S.L. Law

  • Surface properties of antimony doped tin(IV) oxide: A study by electron spectroscopy

    Unknown

  • Influence of shallow core-level hybridization on the electronic structure of post-transition-metal oxides studied using soft X-ray emission and absorption

    Cormac McGuinness;Cristian B. Stagarescu;Philip J. Ryan;James E. Downes

  • The Thionine‐Coated Electrode for Photogalvanic Cells

    W. John Albery;Andrew W. Foulds;Keith J. Hall;A. Robert Hillman

Frequent Co-Authors

David J. Payne
David J. Payne Imperial College London
Aron Walsh
Aron Walsh Imperial College London
Graeme W. Watson
Graeme W. Watson Trinity College Dublin
John S. Foord
John S. Foord University of Oxford
Robert G. Palgrave
Robert G. Palgrave University College London
David O. Scanlon
David O. Scanlon University College London
Antonino Gulino
Antonino Gulino University of Catania
Christopher McConville
Christopher McConville Deakin University
Louis F. J. Piper
Louis F. J. Piper University of Warwick
Tim D. Veal
Tim D. Veal University of Liverpool

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