World's Best Scientists 2026 revealed!

D-Index & Metrics

Chemistry

D-Index
67
Citations
13681
World Ranking
7042
National Ranking
404

Russell G. Egdell publication distribution in Chemistry in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Chemistry in 2026. The highlighted bar marks where Russell G. Egdell sits on this spectrum.

61–80 publications: 66 scientists 81–100 publications: 302 scientists 101–120 publications: 623 scientists 121–140 publications: 918 scientists 141–160 publications: 1,218 scientists 161–180 publications: 1,350 scientists 181–200 publications: 1,344 scientists 201–220 publications: 1,281 scientists 221–240 publications: 1,216 scientists 241–260 publications: 1,100 scientists 261–280 publications: 979 scientists 281–300 publications: 939 scientists 301–320 publications: 764 scientists 321–340 publications: 643 scientists 341–360 publications: 628 scientists 361–380 publications: 522 scientists 381–400 publications: 459 scientists 401–420 publications: 397 scientists 421–440 publications: 327 scientists 441–460 publications: 270 scientists 461–480 publications: 265 scientists 481–500 publications: 252 scientists 501–520 publications: 201 scientists 521–540 publications: 185 scientists 541–560 publications: 148 scientists 561–580 publications: 148 scientists 581–600 publications: 132 scientists 601–620 publications: 114 scientists 621–640 publications: 104 scientists 641–660 publications: 91 scientists 661–680 publications: 92 scientists 681–700 publications: 73 scientists 701–720 publications: 57 scientists 721–740 publications: 54 scientists 741–760 publications: 67 scientists 761–780 publications: 45 scientists 781–800 publications: 46 scientists 801–820 publications: 39 scientists 821–840 publications: 32 scientists 841–860 publications: 36 scientists 861–880 publications: 29 scientists 881–900 publications: 26 scientists 901–920 publications: 24 scientists 921–940 publications: 14 scientists 941–960 publications: 23 scientists 961–980 publications: 28 scientists 981–1,000 publications: 15 scientists 1,001–1,020 publications: 29 scientists 1,021–1,040 publications: 12 scientists 1,041–1,060 publications: 19 scientists 1,061–1,080 publications: 12 scientists 1,081–1,100 publications: 6 scientists 1,101–1,120 publications: 8 scientists 1,121–1,140 publications: 12 scientists 1,141–1,160 publications: 5 scientists 1,161–1,180 publications: 6 scientists 1,181–1,200 publications: 14 scientists 1,201–1,220 publications: 7 scientists 1,221–1,240 publications: 2 scientists 1,241–1,260 publications: 6 scientists 1,261–1,280 publications: 4 scientists 1,281–1,294 publications: 6 scientists 1,295+ publications: 100 scientists
61 publications 1,295+

This scientist: 260 publications — 53rd percentile

53% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,295 publications or more.

Russell G. Egdell D-index placement in Chemistry in 2026

The chart shows the D-index (discipline H-index) distribution of Chemistry scientists ranked by Research.com in 2026. The highlighted bar marks where Russell G. Egdell sits on this spectrum.

40–41 D-Index: 289 scientists 42–43 D-Index: 612 scientists 44–45 D-Index: 808 scientists 46–47 D-Index: 776 scientists 48–49 D-Index: 835 scientists 50–51 D-Index: 861 scientists 52–53 D-Index: 872 scientists 54–55 D-Index: 933 scientists 56–57 D-Index: 1,051 scientists 58–59 D-Index: 930 scientists 60–61 D-Index: 882 scientists 62–63 D-Index: 834 scientists 64–65 D-Index: 731 scientists 66–67 D-Index: 775 scientists 68–69 D-Index: 683 scientists 70–71 D-Index: 646 scientists 72–73 D-Index: 561 scientists 74–75 D-Index: 501 scientists 76–77 D-Index: 437 scientists 78–79 D-Index: 388 scientists 80–81 D-Index: 354 scientists 82–83 D-Index: 292 scientists 84–85 D-Index: 275 scientists 86–87 D-Index: 254 scientists 88–89 D-Index: 235 scientists 90–91 D-Index: 185 scientists 92–93 D-Index: 192 scientists 94–95 D-Index: 155 scientists 96–97 D-Index: 163 scientists 98–99 D-Index: 125 scientists 100–101 D-Index: 105 scientists 102–103 D-Index: 105 scientists 104–105 D-Index: 112 scientists 106–107 D-Index: 88 scientists 108–109 D-Index: 68 scientists 110–111 D-Index: 69 scientists 112–113 D-Index: 65 scientists 114–115 D-Index: 79 scientists 116–117 D-Index: 61 scientists 118–119 D-Index: 44 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 40 scientists 124–125 D-Index: 33 scientists 126–127 D-Index: 26 scientists 128–129 D-Index: 34 scientists 130–131 D-Index: 35 scientists 132–133 D-Index: 25 scientists 134–135 D-Index: 27 scientists 136–137 D-Index: 17 scientists 138–139 D-Index: 16 scientists 140–141 D-Index: 20 scientists 142–143 D-Index: 20 scientists 144–145 D-Index: 15 scientists 146–147 D-Index: 9 scientists 148–149 D-Index: 9 scientists 150–151 D-Index: 16 scientists 152–153 D-Index: 11 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 3 scientists 158 D-Index: 3 scientists 159+ D-Index: 98 scientists
40 D-Index 159+

This scientist: 67 D-Index — 62nd percentile

62% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 159 D-Index or more.

Overview

What is he best known for?

The fields of study he is best known for:

  • Organic chemistry
  • Ion
  • Semiconductor

Atomic physics, Electronic structure, Density of states, Inverse photoemission spectroscopy and Condensed matter physics are his primary areas of study. In his study, which falls under the umbrella issue of Atomic physics, Oxidation state and Oxide is strongly linked to Valence. His Electronic structure research integrates issues from Density functional theory, Electronic band structure and Analytical chemistry.

His Density of states research is multidisciplinary, relying on both Electron spectroscopy and X-ray photoelectron spectroscopy. As part of the same scientific family, Russell G. Egdell usually focuses on Inverse photoemission spectroscopy, concentrating on Fermi level and intersecting with Ab initio, Diffraction and Work function. His study in Band gap and Direct and indirect band gaps is carried out as part of his Condensed matter physics studies.

His most cited work include:

  • Theoretical and Experimental Study of the Electronic Structures of MoO3 and MoO2 (357 citations)
  • Stereochemistry of post-transition metal oxides: revision of the classical lone pair model. (318 citations)
  • Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral In 2 O 3 (292 citations)

What are the main themes of his work throughout his whole career to date?

His main research concerns Analytical chemistry, X-ray photoelectron spectroscopy, Electronic structure, Doping and Condensed matter physics. His Analytical chemistry research is multidisciplinary, incorporating perspectives in Annealing, Ceramic, Antimony, Rutile and Mineralogy. His work deals with themes such as Lone pair, Crystallography, Photoemission spectroscopy, Density of states and Density functional theory, which intersect with Electronic structure.

His biological study spans a wide range of topics, including Valence, Thin film and Band gap. The concepts of his Condensed matter physics study are interwoven with issues in Metal and Semiconductor. His Inverse photoemission spectroscopy research integrates issues from Semimetal, Fermi level, Electron shell and Atomic physics.

He most often published in these fields:

  • Analytical chemistry (30.83%)
  • X-ray photoelectron spectroscopy (25.00%)
  • Electronic structure (22.50%)

What were the highlights of his more recent work (between 2009-2021)?

  • Doping (21.67%)
  • Thin film (13.33%)
  • Band gap (15.00%)

In recent papers he was focusing on the following fields of study:

The scientist’s investigation covers issues in Doping, Thin film, Band gap, Oxide and X-ray photoelectron spectroscopy. His research in Doping intersects with topics in Fermi level and Analytical chemistry. His Fermi level study combines topics in areas such as Angle-resolved photoemission spectroscopy and Density of states.

His Band gap study is concerned with the field of Condensed matter physics as a whole. His study in Oxide is interdisciplinary in nature, drawing from both Valence, Indium and Lone pair. He has researched X-ray photoelectron spectroscopy in several fields, including Computational physics, Ab initio quantum chemistry methods, Atomic physics, Scanning tunneling microscope and Density functional theory.

Between 2009 and 2021, his most popular works were:

  • Theoretical and Experimental Study of the Electronic Structures of MoO3 and MoO2 (357 citations)
  • Stereochemistry of post-transition metal oxides: revision of the classical lone pair model. (318 citations)
  • P-type transparent conducting oxides. (179 citations)

In his most recent research, the most cited papers focused on:

  • Organic chemistry
  • Ion
  • Semiconductor

His primary scientific interests are in Doping, Thin film, Band gap, Oxide and Analytical chemistry. When carried out as part of a general Doping research project, his work on Dopant is frequently linked to work in Electrical resistivity and conductivity, therefore connecting diverse disciplines of study. His study explores the link between Dopant and topics such as Scanning tunneling microscope that cross with problems in Atomic physics.

The Band gap study combines topics in areas such as Electronic structure, Neutron diffraction and Semiconductor. His Oxide study integrates concerns from other disciplines, such as Indium, Molybdenum, Chemical bond, Stereochemistry and Oxidation state. In the subject of general Analytical chemistry, his work in Solid solution, Raman spectroscopy, Photoemission spectroscopy and Sol-gel is often linked to Diffuse reflectance infrared fourier transform, thereby combining diverse domains of study.

Best Publications

  • Nature of the Band Gap of In2O3 Revealed by First-Principles Calculations and X-Ray Spectroscopy

    Aron Walsh;Juarez L.F. Da Silva;Su Huai Wei;C. Körber

  • Theoretical and Experimental Study of the Electronic Structures of MoO3 and MoO2

    David O. Scanlon;Graeme W. Watson;D. J. Payne;G. R. Atkinson

  • P-type transparent conducting oxides.

    Kelvin H L Zhang;Kai Xi;Mark G Blamire;Russell G Egdell

  • Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral In 2 O 3

    P. D. C. King;T. D. Veal;F. Fuchs;Ch. Y. Wang

  • Band structure of indium oxide: Indirect versus direct band gap

    Paul Erhart;Andreas Klein;Russell G. Egdell;Karsten Albe

  • Electronic origins of structural distortions in post-transition metal oxides: experimental and theoretical evidence for a revision of the lone pair model.

    D J Payne;R G Egdell;Aron Walsh;G W Watson

  • Surface electron accumulation and the charge neutrality level in In2O3.

    Pdc King;TD Veal;DJ Payne;A Bourlange

  • The metal-to-semiconductor transition in ternary ruthenium (IV) oxides: a study by electron spectroscopy

    P. A. Cox;R. G. Egdell;John B Goodenough;A. Hamnett

  • Thionine coated electrode for photogalvanic cells

    W. John Albery;Andrew W. Foulds;Keith J. Hall;A. Robert Hillman

  • The electronic structure of Bi2-xGdxRu2O7 and RuO2: A study by electron spectroscopy

    P. A. Cox;John B Goodenough;P. J. Tavener;D. Telles

  • Shallow donor state of hydrogen in In 2 O 3 and SnO 2 : Implications for conductivity in transparent conducting oxides

    Pdc King;RL Lichti;YG Celebi;JM Gil

  • High resolution x-ray photoemission study of plasma oxidation of indium–tin–oxide thin film surfaces

    V. Christou;M. Etchells;O. Renault;P. J. Dobson

  • Initial and final state effects in photoemission from Au nanoclusters on TiO2(110)

    A Howard;D.N.S Clark;C.E.J Mitchell;R.G Egdell

  • Competition between initial- and final-state effects in valence- and core-level x-ray photoemission of Sb-doped SnO 2

    R. G. Egdell;J. Rebane;T. J. Walker;D. S. L. Law

  • Electronic structure of In 2 O 3 and Sn-doped In 2 O 3 by hard x-ray photoemission spectroscopy

    C. Körber;V. Krishnakumar;Andreas Klein;G. Panaccione

  • Effect of Cr substitution on the electronic structure of CuAl 1 − x Cr x O 2

    David O. Scanlon;Aron Walsh;Benjamin J. Morgan;Graeme W. Watson

  • Understanding the electronic structure of IrO2 using hard-X-ray photoelectron spectroscopy and density-functional theory.

    Kahk Jm;Poll Cg;Oropeza Fe;Ablett Jm

  • Experimental and theoretical study of the electronic structures of α-PbO and β-PbO2

    David J. Payne;Russell G. Egdell;Danny S.L. Law;Per Anders Glans

  • N-type doping in CdO ceramics: a study by EELS and photoemission spectroscopy

    Y. Dou;R.G. Egdell;T. Walker;D.S.L. Law

  • Surface properties of antimony doped tin(IV) oxide: A study by electron spectroscopy

    Unknown

  • Influence of shallow core-level hybridization on the electronic structure of post-transition-metal oxides studied using soft X-ray emission and absorption

    Cormac McGuinness;Cristian B. Stagarescu;Philip J. Ryan;James E. Downes

  • The Thionine‐Coated Electrode for Photogalvanic Cells

    W. John Albery;Andrew W. Foulds;Keith J. Hall;A. Robert Hillman

Frequent Co-Authors

David J. Payne
David J. Payne Imperial College London
Aron Walsh
Aron Walsh Imperial College London
Graeme W. Watson
Graeme W. Watson Trinity College Dublin
John S. Foord
John S. Foord University of Oxford
Robert G. Palgrave
Robert G. Palgrave University College London
David O. Scanlon
David O. Scanlon University College London
Antonino Gulino
Antonino Gulino University of Catania
Christopher McConville
Christopher McConville Deakin University
Louis F. J. Piper
Louis F. J. Piper University of Warwick
Tim D. Veal
Tim D. Veal University of Liverpool

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