D. Nirmal

Best Publications

• A review of InP/InAlAs/InGaAs based transistors for high frequency applications

  Unknown

  158
  Citations

• A review of GaN HEMT broadband power amplifiers

  Unknown

  139
  Citations

• Challenges in material processing and reliability issues in AlGaN/GaN HEMTs on silicon wafers for future RF power electronics & switching applications: A critical review

  Unknown

  105
  Citations

• Recent developments in materials, architectures and processing of AlGaN/GaN HEMTs for future RF and power electronic applications: A critical review

  Unknown

  104
  Citations

• Nanosheet field effect transistors-A next generation device to keep Moore's law alive: An intensive study

  Unknown

  98
  Citations

• Analysis of AlGaN/GaN HEMT using discrete field plate technique for high power and high frequency applications

  Unknown

  81
  Citations

• Implementation of nanoscale circuits using dual metal gate engineered nanowire MOSFET with high-k dielectrics for low power applications

  Unknown

  80
  Citations

• Analysis of nanometer-scale InGaAs/InAs/InGaAs composite channel MOSFETs using high-K dielectrics for high speed applications

  Unknown

  72
  Citations

• Investigation on Simulation-Based Specific Absorption Rate in Ultra-Wideband Antenna for Breast Cancer Detection

  Unknown

  63
  Citations

• InP high electron mobility transistors for submillimetre wave and terahertz frequency applications: A review

  Unknown

  54
  Citations

• The influence of high-k passivation layer on breakdown voltage of Schottky AlGaN/GaN HEMTs

  Unknown

  52
  Citations

• Current collapse modeling in AlGaN/GaN HEMT using small signal equivalent circuit for high power application

  Unknown

  52
  Citations

• On the performance of GaN‐on‐Silicon, Silicon‐Carbide, and Diamond substrates

  Unknown

  49
  Citations

• Subthreshold performance of gate engineered FinFET devices and circuit with high-k dielectrics

  Unknown

  44
  Citations

• Improved RF and DC performance in AlGaN/GaN HEMT by P-type doping in GaN buffer for millimetre-wave applications

  Unknown

  43
  Citations

• GaAs metamorphic high electron mobility transistors for future deep space-biomedical-millitary and communication system applications: A review

  Unknown

  43
  Citations

• A critical review of design and fabrication challenges in InP HEMTs for future terahertz frequency applications

  J. Ajayan;D. Nirmal;Ribu Mathew;Dheena Kurian

  42
  Citations

• A critical review of AlGaN/GaN-heterostructure based Schottky diode/HEMT hydrogen (H2) sensors for aerospace and industrial applications

  J. Ajayan;D. Nirmal;R. Ramesh;Sandip Bhattacharya

  41
  Citations

• Unique model of polarization engineered AlGaN/GaN based HEMTs for high power applications

  Unknown

  39
  Citations

• A Comprehensive Investigation of Vertically Stacked Silicon Nanosheet Field Effect Transistors: an Analog/RF Perspective

  Shubham Tayal;J. Ajayan;L. M. I. Leo Joseph;J. Tarunkumar

  35
  Citations