World's Best Scientists 2026 revealed!
Allen R. Hefner

Allen R. Hefner

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
41
Citations
6528
World Ranking
4313
National Ranking
1531

Best Publications

  • Silicon Carbide Power MOSFET Model and Parameter Extraction Sequence

    T.R. McNutt;A.R. Hefner;H.A. Mantooth;D. Berning

  • An experimentally verified IGBT model implemented in the Saber circuit simulator

    Unknown

  • An analytical model for the steady-state and transient characteristics of the power insulated-gate bipolar transistor

    Unknown

  • 10 kV, 120 A SiC half H-bridge power MOSFET modules suitable for high frequency, medium voltage applications

    Unknown

  • A monolithic CMOS microhotplate-based gas sensor system

    M.Y. Afridi;J.S. Suehle;M.E. Zaghloul;D.W. Berning

  • Characterization of power electronics system interconnect parasitics using time domain reflectometry

    Huibin Zhu;A.R. Hefner;Jih-Sheng Lai

  • A dynamic electro-thermal model for the IGBT

    Unknown

  • 10-kV, 123-m/spl Omega//spl middot/cm/sup 2/ 4H-SiC power DMOSFETs

    Sei-Hyung Ryu;S. Krishnaswami;M. O'Loughlin;J. Richmond

  • SiC power diodes provide breakthrough performance for a wide range of applications

    Unknown

  • A dynamic electro-thermal model for the IGBT

    Unknown

  • An investigation of the drive circuit requirements for the power insulated gate bipolar transistor (IGBT)

    Unknown

  • Modeling buffer layer IGBTs for circuit simulation

    Unknown

  • An improved understanding for the transient operation of the power insulated gate bipolar transistor (IGBT)

    Unknown

  • Simulating the dynamic electrothermal behavior of power electronic circuits and systems

    Unknown

  • Analytical modeling of device-circuit interactions for the power insulated gate bipolar transistor (IGBT)

    Unknown

  • Electrothermal simulation of an IGBT PWM inverter

    Unknown

  • Performance and Stability of Large-Area 4H-SiC 10-kV Junction Barrier Schottky Rectifiers

    B.A. Hull;J.J. Sumakeris;M.J. O'Loughlin;Qingchun Zhang

  • Analysis of conducted EMI emissions from PWM inverter based on empirical models and comparative experiments

    Huibin Zhu;Jih-Sheng Lai;A.R. Hefner;Yuqing Tang

  • Reliability of SiC MOS devices

    Unknown

  • A comparison of quantum-mechanical capacitance-voltage simulators

    C.A. Richter;A.R. Hefner;E.M. Vogel

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