| Discipline name | Position | Best Scientists | Publications | D-Index |
|---|---|---|---|---|
| Physics | 256 | 13 | 16 | 5 |
| Electronics and Electrical Engineering | 374 | 71 | 92 | 7 |
| Materials Science | 553 | 139 | 160 | 9 |
| Engineering and Technology | 926 | 25 | 30 | 8 |
Journal of Vacuum Science & Technology B generally zeroes in on subjects such as Optoelectronics, Analytical chemistry, Optics, Silicon and Nanotechnology. Journal of Vacuum Science & Technology B focuses on Optoelectronics but the discussions also offer insight into other areas such as Etching (microfabrication), Molecular beam epitaxy and Substrate (electronics). The research on Molecular beam epitaxy tackled can also make contributions to studies in the areas of Quantum well, Electron diffraction and Condensed matter physics, Doping.
The Analytical chemistry works featured in it incorporate elements from Ion, Thin film, Annealing (metallurgy) and Plasma. While work presented in Journal of Vacuum Science & Technology B provided substantial information on Optics, it also covered topics in Wafer and Cathode ray. The journal focuses on Silicon as well as the interrelated topic of Ion implantation.
Topics in Nanotechnology were tackled in line with various other fields like Nanolithography and Field electron emission. Lithography research in it involves the investigation of Resist studies, all of which are linked to disciplines such as Photoresist. It explores research in Crystallography and overlapping concepts in Scanning tunneling microscope to expand the discourse in Epitaxy.
The most cited papers facilitate discussions on Optoelectronics, Analytical chemistry, Nanotechnology, Optics and Silicon. While Optoelectronics is the focus of the most cited articles, it also provides insights into the studies of Molecular beam epitaxy, Epitaxy, Substrate (electronics) and Field electron emission. The published papers deal with Analytical chemistry in conjunction with Thin film and similar fields in Chemical vapor deposition.
The discussions in the journal mainly cover the fields of Optoelectronics, Silicon, Electron, Field electron emission and Composite material. In it, Layer (electronics) and Transistor are investigated in conjunction with one another to address concerns in Optoelectronics research. The studies on Silicon discussed can also contribute to research in the domains of Adhesion, Wafer dicing, Contact area and Etching (microfabrication), Isotropic etching.
While Etching (microfabrication) is the key highlight in the journal, it also covered some subjects on Chromium and Nanolithography. The concepts on Electron presented in the journal can also apply to other research fields, including Field (physics), Molecular physics, Modulation and Continuous wave. The work on Field electron emission tackled in Journal of Vacuum Science & Technology B brings together disciplines like Carbon nanotube, X-ray photoelectron spectroscopy, Auger electron spectroscopy, Thermoluminescence and Phosphor.
A key indicator for each journal is its effectiveness in reaching other researchers with the papers published at that venue.
The chart below presents the interquartile range (first quartile 25%, median 50% and third quartile 75%) of the number of citations of articles over time.
The top authors publishing in Journal of Vacuum Science & Technology B (based on the number of publications) are:
The overall trend for top authors publishing in this journal is outlined below. The chart shows the number of publications at each edition of the journal for top authors.
Only papers with recognized affiliations are considered
The top affiliations publishing in Journal of Vacuum Science & Technology B (based on the number of publications) are:
The overall trend for top affiliations publishing in this journal is outlined below. The chart shows the number of publications at each edition of the journal for top affiliations.
The publication chance index shows the ratio of articles published by the best research institutions in the journal edition to all articles published within that journal. The best research institutions were selected based on the largest number of articles published during all editions of the journal.
The chart below presents the percentage ratio of articles from top institutions (based on their ranking of total papers).Top affiliations were grouped by their rank into the following tiers: top 1-10, top 11-20, top 21-50, and top 51+. Only articles with a recognized affiliation are considered.
During the most recent 2021 edition, 3.33% of publications had an unrecognized affiliation. Out of the publications with recognized affiliations, 13.79% were posted by at least one author from the top 10 institutions publishing in the journal. Another 5.17% included authors affiliated with research institutions from the top 11-20 affiliations. Institutions from the 21-50 range included 13.79% of all publications and 67.24% were from other institutions.
A very common phenomenon observed among researchers publishing scientific articles is the intentional selection of journals they have already attended in the past. In particular, it is worth analyzing the case when the authors participate in the same journal from year to year.
The Returning Authors Index presented below illustrates the ratio of authors who participated in both a given as well as the previous edition of the journal in relation to all participants in a given year.
The graph below shows the Returning Institution Index, illustrating the ratio of institutions that participated in both a given and the previous edition of the conference in relation to all affiliations present in a given year.
Our experience to innovation index was created to show a cross-section of the experience level of authors publishing in a journal. The index includes the authors publishing at the last edition of a journal, grouped by total number of publications throughout their academic career (P) and the total number of citations of these publications ever received (C).
The group intervals were selected empirically to best show the diversity of the authors' experiences, their labels were selected as a convenience, not as judgment. The authors were divided into the following groups:
The chart below illustrates experience levels of first authors in cases of publications with multiple authors.
Unknown
(2024)Kenneth S. Ogueri;Kenneth S. Ogueri;Kennedy S. Ogueri;Harry R. Allcock;Cato T. Laurencin
(2020)Glenson R. Panghulan;Magdaleno R. Vasquez;Yasmin D. Edañol;Narong Chanlek
(2020)Nikita M. Ryskin;Roman A. Torgashov;Andrey V. Starodubov;Andrey G. Rozhnev
(2021)Stefan Schöche;Po-Hsun Ho;John A. Roberts;Shangjie J. Yu
(2020)Minghan Xian;Hao Luo;Xinyi Xia;Chaker Fares
(2021)John Robertson;John Robertson;Yuzheng Guo;Zhaofu Zhang;Hongfei Li
(2020)Junao Cheng;Hao Yang;Caiyu Wang;Nick Combs
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