World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
68
Citations
14126
World Ranking
4956
National Ranking
1532

Run Long publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Run Long sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 248 publications — 46th percentile

46% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Run Long D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Run Long sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 68 D-Index — 63rd percentile

63% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Run Long is affiliated with Beijing Normal University in China and has a research profile rooted primarily in Materials Science and Engineering. Their scholarly contributions span a diverse range of subfields including Materials Chemistry, Electrical and Electronic Engineering, Renewable Energy, Sustainability and the Environment, Atomic and Molecular Physics and Optics, as well as Polymers and Plastics.

The scientist's research encompasses various specialized topics. Key areas of focus include:

  • Perovskite Materials and Applications
  • Chalcogenide Semiconductor Thin Films
  • Solid-state Spectroscopy and Crystallography
  • Quantum Dots Synthesis and Properties
  • 2D Materials and Applications
  • Advanced Photocatalysis Techniques
  • Electronic and Structural Properties of Oxides

Run Long has published extensively in well-known scientific journals. Frequent publication venues include:

  • The Journal of Physical Chemistry Letters
  • Journal of the American Chemical Society
  • Nano Letters
  • ACS Nano
  • Journal of Materials Chemistry A

The scientist has collaborated frequently with several co-authors, among whom are Wei-Hai Fang, Oleg V. Prezhdo, Lu Qiao, Haoran Lu, and Ran Shi. Such collaborations reflect ongoing scholarly interactions within their fields of study.

Some recent notable papers authored by Run Long are:

  • "Reduced-dimensional perovskite photovoltaics with homogeneous energy landscape," 2020, Nature Communications
  • "High-performance large-area quasi-2D perovskite light-emitting diodes," 2021, Nature Communications
  • "Rationalization of passivation strategies toward high-performance perovskite solar cells," 2022, Chemical Society Reviews
  • "Marked Passivation Effect of Naphthalene-1,8-Dicarboximides in High-Performance Perovskite Solar Cells," 2021, Advanced Materials
  • "Water Splitting with a Single-Atom Cu/TiO2 Photocatalyst: Atomistic Origin of High Efficiency and Proposed Enhancement by Spin Selection," 2021, JACS Au

Best Publications

  • Unravelling the Effects of Grain Boundary and Chemical Doping on Electron-Hole Recombination in CH3NH3PbI3 Perovskite by Time-Domain Atomistic Simulation.

    Run Long;Run Long;Jin Liu;Oleg V. Prezhdo

  • Reduced-dimensional perovskite photovoltaics with homogeneous energy landscape.

    Tingwei He;Saisai Li;Yuanzhi Jiang;Chaochao Qin

  • Ultrafast carrier thermalization and cooling dynamics in few-layer MoS2

    Zhaogang Nie;Run Long;Run Long;Linfeng Sun;Chung-Che Huang

  • Rationalization of passivation strategies toward high-performance perovskite solar cells.

    Unknown

  • High-performance large-area quasi-2D perovskite light-emitting diodes.

    Changjiu Sun;Yuanzhi Jiang;Minghuan Cui;Lu Qiao

  • A‑site Cation Engineering for Highly Efficient MAPbI 3 Single‑Crystal X‑ray Detector

    Yanmin Huang;Lu Qiao;Yuanzhi Jiang;Tingwei He

  • Quantum Coherence Facilitates Efficient Charge Separation at a MoS2/MoSe2 van der Waals Junction.

    Run Long;Oleg V. Prezhdo

  • Instantaneous generation of charge-separated state on TiO₂ surface sensitized with plasmonic nanoparticles.

    Run Long;Oleg V Prezhdo

  • Photo-induced charge separation across the graphene-TiO2 interface is faster than energy losses: a time-domain ab initio analysis.

    Run Long;Run Long;Niall J. English;Oleg V. Prezhdo

  • Marked Passivation Effect of Naphthalene-1,8-Dicarboximides in High-Performance Perovskite Solar Cells

    Zhihao Zhang;Yifeng Gao;Zicheng Li;Lu Qiao

  • Donor-Acceptor Interaction Determines the Mechanism of Photoinduced Electron Injection from Graphene Quantum Dots into TiO2: π-Stacking Supersedes Covalent Bonding.

    Run Long;David Casanova;David Casanova;Wei-Hai Fang;Oleg V. Prezhdo

  • Sulfur Adatom and Vacancy Accelerate Charge Recombination in MoS2, but by Different Mechanisms: Time-Domain Ab Initio Analysis

    Linqiu Li;Run Long;Thomas Bertolini;Oleg V. Prezhdo

  • Efficient and Stable Inverted Perovskite Solar Cells Incorporating Secondary Amines.

    Hao Chen;Hao Chen;Qi Wei;Makhsud I. Saidaminov;Fei Wang

  • Rapid Decoherence Suppresses Charge Recombination in Multi-Layer 2D Halide Perovskites: Time-Domain Ab Initio Analysis.

    Zhaosheng Zhang;Wei-Hai Fang;Marina V. Tokina;Run Long

  • Synergistic Effects on Band Gap-Narrowing in Titania by Codoping from First-Principles Calculations

    Run Long;Niall J. English

  • Control of Charge Carriers Trapping and Relaxation in Hematite by Oxygen Vacancy Charge: Ab Initio Non-adiabatic Molecular Dynamics

    Zhaohui Zhou;Jin Liu;Run Long;Linqiu Li

  • Superoxide/Peroxide Chemistry Extends Charge Carriers' Lifetime but Undermines Chemical Stability of CH3NH3PbI3 Exposed to Oxygen: Time-Domain ab Initio Analysis.

    Jinlu He;Wei-Hai Fang;Run Long;Oleg V Prezhdo

  • Moderate Humidity Delays Electron-Hole Recombination in Hybrid Organic-Inorganic Perovskites: Time-Domain Ab Initio Simulations Rationalize Experiments.

    Run Long;Run Long;Weihai Fang;Oleg. V. Prezhdo

  • Time-Domain Ab Initio Modeling of Photoinduced Dynamics at Nanoscale Interfaces

    Linjun Wang;Run Long;Oleg V. Prezhdo

  • Doping‑Induced Amorphization, Vacancy, and Gradient Energy Band in SnS 2 Nanosheet Arrays for Improved Photoelectrochemical Water Splitting

    Linxing Meng;Siyu Wang;Fengren Cao;Wei Tian

  • Ab Initio Nonadiabatic Molecular Dynamics of the Ultrafast Electron Injection from a PbSe Quantum Dot into the TiO2 Surface

    Run Long;Oleg V. Prezhdo

Frequent Co-Authors

Oleg V. Prezhdo
Oleg V. Prezhdo University of Southern California
Wei-Hai Fang
Wei-Hai Fang Beijing Normal University
Niall J. English
Niall J. English University College Dublin
Ying Dai
Ying Dai Shandong University
Baibiao Huang
Baibiao Huang Shandong University
Genban Sun
Genban Sun Beijing Normal University
Jiangyu Li
Jiangyu Li Southern University of Science and Technology
David Casanova
David Casanova Donostia International Physics Center
Wei Tian
Wei Tian Soochow University
Mingjian Yuan
Mingjian Yuan Nankai University

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