World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
39
Citations
10809
World Ranking
4589
National Ranking
242

Best Publications

  • An Industry-Based Survey of Reliability in Power Electronic Converters

    Shaoyong Yang;A Bryant;P Mawby;Dawei Xiang

  • Condition Monitoring for Device Reliability in Power Electronic Converters: A Review

    Shaoyong Yang;Dawei Xiang;Angus Bryant;Philip Mawby

  • A Lifetime Estimation Technique for Voltage Source Inverters

    Unknown

  • Investigation Into IGBT dV/dt During Turn-Off and Its Temperature Dependence

    A. Bryant;Shaoyong Yang;P. Mawby;Dawei Xiang

  • Monitoring Solder Fatigue in a Power Module Using Case-Above-Ambient Temperature Rise

    Dawei Xiang;Li Ran;P. Tavner;A. Bryant

  • Failure and Reliability Analysis of a SiC Power Module Based on Stress Comparison to a Si Device

    Borong Hu;Jose Ortiz Gonzalez;Li Ran;Hai Ren

  • Exploration of Power Device Reliability using Compact Device Models and Fast Electro-Thermal Simulation

    A.T. Bryant;P.A. Mawby;P.R. Palmer;E. Santi

  • Condition Monitoring Power Module Solder Fatigue Using Inverter Harmonic Identification

    Dawei Xiang;Li Ran;P. Tavner;Shaoyong Yang

  • Temperature and Switching Rate Dependence of Crosstalk in Si-IGBT and SiC Power Modules

    Saeed Jahdi;Olayiwola Alatise;Jose Angel Ortiz Gonzalez;Roozbeh Bonyadi

  • Field-effect mobility temperature modeling of 4H-SiC metal-oxide-semiconductor transistors

    Amador Pérez-Tomás;P. Brosselard;P. Godignon;J. Millan

  • Low $\Delta T_{j}$ Stress Cycle Effect in IGBT Power Module Die-Attach Lifetime Modeling

    Wei Lai;Minyou Chen;Li Ran;Olayiwola Alatise

  • An Investigation of Temperature-Sensitive Electrical Parameters for SiC Power MOSFETs

    Jose Ortiz Gonzalez;Olayiwola Alatise;Ji Hu;Li Ran

  • Theory of a novel voltage-sustaining layer for power devices

    Unknown

  • An industry-based survey of reliability in power electronic converters

    Shaoyong Yang;Angus Bryant;Phil Mawby;Dawei Xiang

  • Experimental Investigation on the Effects of Narrow Junction Temperature Cycles on Die-Attach Solder Layer in an IGBT Module

    Wei Lai;Minyou Chen;Li Ran;Shengyou Xu

  • An Analysis of the Switching Performance and Robustness of Power MOSFETs Body Diodes: A Technology Evaluation

    Saeed Jahdi;Olayiwola M. Alatise;Roozbeh Bonyadi;Petros Alexakis

  • Modelling the inhomogeneous SiC Schottky interface

    P. M. Gammon;Amador Pérez-Tomás;V. A. Shah;O. Vavasour

  • The Effect of Electrothermal Nonuniformities on Parallel Connected SiC Power Devices Under Unclamped and Clamped Inductive Switching

    Ji Hu;Olayiwola Alatise;Jose Angel Ortiz Gonzalez;Roozbeh Bonyadi

  • Characterization and modeling of n-n Si∕SiC heterojunction diodes

    Amador Pérez-Tomás;M. R. Jennings;M. C. Davis;James A. Covington

  • An evaluation of silicon carbide unipolar technologies for electric vehicle drive-trains

    Saeed Jahdi;Olayiwola M. Alatise;Craig A. Fisher;Li Ran

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