Mallory Mativenga

Best Publications

• Transparent Flexible Circuits Based on Amorphous-Indium–Gallium–Zinc–Oxide Thin-Film Transistors

  M Mativenga;Min Hyuk Choi;Jae Won Choi;Jin Jang

  220
  Citations

• Bulk Accumulation a-IGZO TFT for High Current and Turn-On Voltage Uniformity

  Mallory Mativenga;Sungjin An;Jin Jang

  153
  Citations

• Fully Transparent and Rollable Electronics

  Mallory Mativenga;Di Geng;Byungsoon Kim;Jin Jang

  151
  Citations

• A Full-Swing a-IGZO TFT-Based Inverter With a Top-Gate-Bias-Induced Depletion Load

  Man Ju Seok;Min Hyuk Choi;M. Mativenga;Di Geng

  122
  Citations

• Highly Robust Neutral Plane Oxide TFTs Withstanding 0.25 mm Bending Radius for Stretchable Electronics.

  Yong-Hwan Kim;Eunji Lee;Jae Gwang Um;Mallory Mativenga

  119
  Citations

• Origin of light instability in amorphous IGZO thin-film transistors and its suppression

  Unknown

  110
  Citations

• High-Speed Dual-Gate a-IGZO TFT-Based Circuits With Top-Gate Offset Structure

  Xiuling Li;Di Geng;Mallory Mativenga;Jin Jang

  104
  Citations

• Amorphous-InGaZnO4 Thin-Film Transistors with Damage-Free Back Channel Wet-Etch Process

  Sang Hyun Ryu;Young Chul Park;Mallory Mativenga;Dong Han Kang

  99
  Citations

• Gate bias-stress induced hump-effect in transfer characteristics of amorphous-indium-galium-zinc-oxide thin-fim transistors with various channel widths

  Mallory Mativenga;Manju Seok;Jin Jang

  98
  Citations

• Increase of interface and bulk density of states in amorphous-indium-gallium-zinc-oxide thin-film transistors with negative-bias-under-illumination-stress time

  Jae Gwang Um;Mallory Mativenga;Piero Migliorato;Jin Jang

  96
  Citations

• Highly Robust Bendable Oxide Thin-Film Transistors on Polyimide Substrates via Mesh and Strip Patterning of Device Layers

  Suhui Lee;Daun Jeong;Mallory Mativenga;Jin Jang

  86
  Citations

• Mechanism of positive bias stress-assisted recovery in amorphous-indium-gallium-zinc-oxide thin-film transistors from negative bias under illumination stress

  Jae Gwang Um;Mallory Mativenga;Jin Jang

  86
  Citations

• Coplanar amorphous-indium-gallium-zinc-oxide thin film transistor with He plasma treated heavily doped layer

  Ho-young Jeong;Bok-young Lee;Young-jang Lee;Jung-il Lee

  84
  Citations

• High-Speed Pseudo-CMOS Circuits Using Bulk Accumulation a-IGZO TFTs

  Yuanfeng Chen;Di Geng;Mallory Mativenga;Hyoungsik Nam

  78
  Citations

• Effect of SiO 2 and SiO 2 /SiN x Passivation on the Stability of Amorphous Indium-Gallium Zinc-Oxide Thin-Film Transistors Under High Humidity

  Delwar Hossain Chowdhury;Mallory Mativenga;Jae Gwang Um;Ravi K. Mruthyunjaya

  75
  Citations

• High-Speed and Low-Voltage-Driven Shift Register With Self-Aligned Coplanar a-IGZO TFTs

  Di Geng;Dong Han Kang;Man Ju Seok;M. Mativenga

  71
  Citations

• Analysis of Improved Performance Under Negative Bias Illumination Stress of Dual Gate Driving a-IGZO TFT by TCAD Simulation

  Mohammad Masum Billah;Delwar Hossain Chowdhury;Mallory Mativenga;Jae Gwang Um

  66
  Citations

• Threshold voltage dependence on channel length in amorphous-indium-gallium-zinc-oxide thin-film transistors

  Dong Han Kang;Ji Ung Han;Mallory Mativenga;Su Hwa Ha

  62
  Citations

• Reduction of Negative Bias and Light Instability of a-IGZO TFTs by Dual-Gate Driving

  Sejin Hong;Suhui Lee;Mallory Mativenga;Jin Jang

  62
  Citations

• High current stress effects in amorphous-InGaZnO4 thin-film transistors

  Mallory Mativenga;Sejin Hong;Jin Jang

  60
  Citations