World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
44
Citations
9601
World Ranking
3674
National Ranking
57

Best Publications

  • Roadmap on silicon photonics

    David Thomson;Aaron Zilkie;John E Bowers;Tin Komljenovic

  • The end of CMOS scaling: toward the introduction of new materials and structural changes to improve MOSFET performance

    T. Skotnicki;J.A. Hutchby;Tsu-Jae King;H.-S.P. Wong

  • 28nm FDSOI technology platform for high-speed low-voltage digital applications

    N. Planes;O. Weber;V. Barral;S. Haendler

  • Plasma wave detection of terahertz radiation by silicon field effects transistors: Responsivity and noise equivalent power

    R. Tauk;F. Teppe;S. Boubanga;D. Coquillat

  • Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors

    W. Knap;F. Teppe;Y. Meziani;N. Dyakonova

  • Multi- $V_{T}$ UTBB FDSOI Device Architectures for Low-Power CMOS Circuit

    J-P Noel;O. Thomas;M. Jaud;O. Weber

  • Efficient low-loss InGaAsP/Si hybrid MOS optical modulator

    Jae-Hoon Han;Jae-Hoon Han;Frederic Boeuf;Junichi Fujikata;Shigeki Takahashi

  • High immunity to threshold voltage variability in undoped ultra-thin FDSOI MOSFETs and its physical understanding

    O. Weber;O. Faynot;F. Andrieu;C. Buj-Dufournet

  • Innovative Materials, Devices, and CMOS Technologies for Low-Power Mobile Multimedia

    Unknown

  • Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys

    Anas Elbaz;Anas Elbaz;Dan Buca;Nils von den Driesch;Nils von den Driesch;Konstantinos Pantzas

  • Germanium avalanche receiver for low power interconnects.

    Léopold Virot;Paul Crozat;Jean-Marc Fédéli;Jean-Michel Hartmann

  • Unexpected mobility degradation for very short devices : A new challenge for CMOS scaling

    Antoine Cros;Krunoslav Romanjek;Dominique Fleury;Samuel Harrison

  • Silicon Photonics R&D and Manufacturing on 300-mm Wafer Platform

    Frederic Boeuf;Sebastien Cremer;Enrico Temporiti;Massimo Fere

  • Integrated waveguide PIN photodiodes exploiting lateral Si/Ge/Si heterojunction.

    Léopold Virot;Daniel Benedikovic;Bertrand Szelag;Carlos Alonso-Ramos

  • Low leakage and low variability Ultra-Thin Body and Buried Oxide (UT2B) SOI technology for 20nm low power CMOS and beyond

    F. Andrieu;O. Weber;J. Mazurier;O. Thomas

  • A multi-wavelength 3D-compatible silicon photonics platform on 300mm SOI wafers for 25Gb/s applications

    F. Boeuf;S. Cremer;N. Vulliet;T. Pinguet

  • L-shaped fiber-chip grating couplers with high directionality and low reflectivity fabricated with deep-UV lithography

    Daniel Benedikovic;Carlos Alonso-Ramos;Diego Pérez-Galacho;Sylvain Guerber

  • Requirements for ultra-thin-film devices and new materials for the CMOS roadmap

    C. Fenouillet-Beranger;T. Skotnicki;S. Monfray;N. Carriere

  • Comprehensive and Accurate Parasitic Capacitance Models for Two- and Three-Dimensional CMOS Device Structures

    J. Lacord;G. Ghibaudo;F. Boeuf

  • Ultra-thin-body and BOX (UTBB) fully depleted (FD) device integration for 22nm node and beyond

    Q. Liu;A. Yagishita;N. Loubet;A. Khakifirooz

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