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IEEE Transactions on Nuclear Science
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IEEE Transactions on Nuclear Science

Ranking & Metrics

Discipline name Position Best Scientists Publications D-Index
Physics 137 36 94 14
Engineering and Technology 886 18 41 9

Additional Metrics

Number of Best Scientists*: 226
Documents by Best Scientists*: 491
Top 100 Ranked Scientists*: 4
SCIMAGO H-index: 138
SCIMAGO SJR: 0.495
Impact Factor: 1.9

Overview

Top Research Topics at IEEE Transactions on Nuclear Science?

The primary areas of discussion in the journal are Optics, Optoelectronics, Electrical engineering, Detector and Electronic engineering. The Optics research presented places emphasis on topics like Beam (structure), Image resolution, Scintillator, Photomultiplier and Scintillation counter. Beam (structure) research featured in the journal incorporates concerns from various other topics such as Nuclear physics and Atomic physics.

The journal links adjacent topics like Nuclear physics with Ion. Ionization and Charged particle are some topics wherein Atomic physics research discussed in IEEE Transactions on Nuclear Science have an impact. The Optoelectronics works featured in it incorporate elements from Radiation, Transistor and Irradiation.

Most of the works presented in IEEE Transactions on Nuclear Science deals with Electrical engineering but it intersects with the subject of Particle accelerator. The study on Detector presented in IEEE Transactions on Nuclear Science intersects with the topics under Neutron. It explores topics in Electronic engineering which can be helpful for research in disciplines like Data acquisition, Computer hardware and Integrated circuit.

  • Optics (21.32%)
  • Optoelectronics (18.09%)
  • Electrical engineering (17.14%)

What are the most cited papers published in the journal?

  • Geant4 developments and applications (4658 citations)
  • The Fourier reconstruction of a head section (1774 citations)
  • A Method for Attenuation Correction in Radionuclide Computed Tomography (1153 citations)

Research areas of the most cited articles at IEEE Transactions on Nuclear Science:

The published articles mostly deal with topics like Optoelectronics, Electronic engineering, Optics, Detector and Electrical engineering. The works on Optoelectronics tackled in the published articles bring together disciplines like Radiation, Transistor, Semiconductor device and Irradiation. The studies on Electronic engineering discussed at the journal publications can also contribute to research in the domains of Electronic circuit and Integrated circuit.

What topics the last edition of the journal is best known for?

  • Quantum mechanics
  • Electron
  • Optics

The previous edition focused in particular on these issues:

The topics of Detector, Optoelectronics, Optics, Field-programmable gate array and Computer hardware are the focal point of discussions in the journal. It focuses on Detector but the discussions also offer insight into other areas such as Energy (signal processing), Preamplifier and Application-specific integrated circuit. The studies on Optoelectronics discussed can also contribute to research in the domains of Transistor, Irradiation and Logic gate.

In addition to Irradiation research, the journal aims to explore topics under Ion, Radiation, Fiber and Threshold voltage. IEEE Transactions on Nuclear Science facilitated presentations on Optics research, particularly Scintillator, Photonics and Beam (structure). The tackled Computer hardware research is interrelated with Data acquisition which concerns subjects like Software.

The most cited articles from the last journal are:

  • Radiation Effects in a Post-Moore World (5 citations)
  • A Low-Power Time-to-Digital Converter for the CMS Endcap Timing Layer (ETL) Upgrade (4 citations)
  • Assessment of Proton Direct Ionization for the Radiation Hardness Assurance of Deep Submicron SRAMs Used in Space Applications (4 citations)

Papers citation over time

A key indicator for each journal is its effectiveness in reaching other researchers with the papers published at that venue.

The chart below presents the interquartile range (first quartile 25%, median 50% and third quartile 75%) of the number of citations of articles over time.

The top authors publishing in IEEE Transactions on Nuclear Science (based on the number of publications) are:

  • Ronald D. Schrimpf (402 papers) published 13 papers at the last edition, 1 more than at the previous edition,
  • Daniel M. Fleetwood (322 papers) published 12 papers at the last edition, 4 more than at the previous edition,
  • Robert A. Reed (237 papers) published 11 papers at the last edition, 1 less than at the previous edition,
  • Lloyd W. Massengill (201 papers) published 4 papers at the last edition, 2 more than at the previous edition,
  • Dale McMorrow (155 papers) published 6 papers at the last edition the same number as at the previous edition.

The overall trend for top authors publishing in this journal is outlined below. The chart shows the number of publications at each edition of the journal for top authors.

Only papers with recognized affiliations are considered

The top affiliations publishing in IEEE Transactions on Nuclear Science (based on the number of publications) are:

  • CERN (844 papers) published 25 papers at the last edition, 2 more than at the previous edition,
  • Brookhaven National Laboratory (734 papers) published 4 papers at the last edition, 1 less than at the previous edition,
  • Sandia National Laboratories (681 papers) published 15 papers at the last edition, 8 more than at the previous edition,
  • Los Alamos National Laboratory (680 papers) published 6 papers at the last edition, 2 less than at the previous edition,
  • Vanderbilt University (624 papers) published 24 papers at the last edition, 2 more than at the previous edition.

The overall trend for top affiliations publishing in this journal is outlined below. The chart shows the number of publications at each edition of the journal for top affiliations.

Publication chance based on affiliation

The publication chance index shows the ratio of articles published by the best research institutions in the journal edition to all articles published within that journal. The best research institutions were selected based on the largest number of articles published during all editions of the journal.

The chart below presents the percentage ratio of articles from top institutions (based on their ranking of total papers).Top affiliations were grouped by their rank into the following tiers: top 1-10, top 11-20, top 21-50, and top 51+. Only articles with a recognized affiliation are considered.

During the most recent 2021 edition, 14.15% of publications had an unrecognized affiliation. Out of the publications with recognized affiliations, 28.32% were posted by at least one author from the top 10 institutions publishing in the journal. Another 5.38% included authors affiliated with research institutions from the top 11-20 affiliations. Institutions from the 21-50 range included 27.24% of all publications and 39.07% were from other institutions.

Returning Authors Index

A very common phenomenon observed among researchers publishing scientific articles is the intentional selection of journals they have already attended in the past. In particular, it is worth analyzing the case when the authors participate in the same journal from year to year.

The Returning Authors Index presented below illustrates the ratio of authors who participated in both a given as well as the previous edition of the journal in relation to all participants in a given year.

Returning Institution Index

The graph below shows the Returning Institution Index, illustrating the ratio of institutions that participated in both a given and the previous edition of the conference in relation to all affiliations present in a given year.

The experience to innovation index

Our experience to innovation index was created to show a cross-section of the experience level of authors publishing in a journal. The index includes the authors publishing at the last edition of a journal, grouped by total number of publications throughout their academic career (P) and the total number of citations of these publications ever received (C).

The group intervals were selected empirically to best show the diversity of the authors' experiences, their labels were selected as a convenience, not as judgment. The authors were divided into the following groups:

  • Novice - P < 5 or C < 25 (the number of publications less than 5 or the number of citations less than 25),
  • Competent - P < 10 or C < 100 (the number of publications less than 10 or the number of citations less than 100),
  • Experienced - P < 25 or C < 625 (the number of publications less than 25 or the number of citations less than 625),
  • Master - P < 50 or C < 2500 (the number of publications less than 50 or the number of citations less than 2500),
  • Star - P ≥ 50 and C ≥ 2500 (both the number of publications greater than 50 and the number of citations greater than 2500).

The chart below illustrates experience levels of first authors in cases of publications with multiple authors.

Top Publications

  • Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes

    D. R. Ball;J. M. Hutson;A. Javanainen;J.-M. Lauenstein

    (2020)
    121 Citations
  • Total-Ionizing-Dose Effects, Border Traps, and 1/ f Noise in Emerging MOS Technologies

    Daniel M. Fleetwood

    (2020)
    89 Citations
  • Radiation Effects in AlGaN/GaN HEMTs

    (2022)
    73 Citations
  • Radiation Effects in a Post-Moore World

    Daniel M. Fleetwood

    (2021)
    55 Citations
  • Effects of Breakdown Voltage on Single-Event Burnout Tolerance of High-Voltage SiC Power MOSFETs

    D. R. Ball;K. F. Galloway;R. A. Johnson;M. L. Alles

    (2021)
    53 Citations
  • Ionizing-Radiation Response and Low-Frequency Noise of 28-nm MOSFETs at Ultrahigh Doses

    Stefano Bonaldo;Serena Mattiazzo;Christian Enz;Andrea Baschirotto

    (2020)
    41 Citations
  • Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs With SiO 2 /HfO 2 Gate Dielectrics

    Mariia Gorchichko;Daniel M. Fleetwood;Ronald D. Schrimpf;Robert A. Reed

    (2020)
    30 Citations
  • Effects of Bias and Temperature on Interface-Trap Annealing in MOS and Linear Bipolar Devices

    (2022)
    28 Citations
  • Total-Ionizing-Dose Effects and Low-Frequency Noise in 16-nm InGaAs FinFETs With HfO 2 /Al 2 O 3 Dielectrics

    Stefano Bonaldo;Vamsi Putcha;Dimitri Linten;Sokrates T. Pantelides

    (2020)
    28 Citations
  • TID Effects in Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors Irradiated to Ultrahigh Doses

    (2022)
    22 Citations

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Best Scientists Contributing to This Journal

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